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http://dx.doi.org/10.4313/TEEM.2004.5.3.113

Effect of the Coating on the Structure and Optical Properties of GaN Nanowires  

Lee, Jong-Soo (Department of Electrical Engineering, Korea University)
Sim, Sung-Kyu (Department of Electrical Engineering, Korea University)
Min, Byung-Don (Department of Electrical Engineering, Korea University)
Cho, Kyoung-Ah (Department of Electrical Engineering, Korea University)
Kim, Hyun-Suk (Department of Electrical Engineering, Korea University)
Kim, Sang-Sig (Department of Electrical Engineering, Korea University)
Publication Information
Transactions on Electrical and Electronic Materials / v.5, no.3, 2004 , pp. 113-119 More about this Journal
Abstract
Structural and optical properties of as-synthesized, Ga$_2$O$_3$-coated, and Al$_2$O$_3$-coated GaN nanowires are examined in this paper. GaN nanowires were synthesized by thermal evaporation of ball-milled GaN powders in an NH$_3$ atmosphere. The thermal annealing of the as-synthesized GaN nanowires in an argon atmosphere allows their surfaces to be oxidized, leading to the formation of 2nm-thick Ga$_2$O$_3$ layers. For the oxidized GaN nanowires, the distances between the neighboring lattice planes are shortened, and an excitonic emission band is remarkably enhanced in intensity, compared with the as-synthesized GaN nanowires. In addition, the as-synthesized GaN nanowires were coated cylindrically with Al$_2$O$_3$ by atomic layer deposition technique. Our study suggests that the Al$_2$O$_3$-coating passivates some of surface states in the GaN nanowires.
Keywords
GaN nanowire; Thermal annealing; TEM;
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