• Bulletin of the Korean Chemical Society
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• v.27 no.3
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• pp.373-375
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• 2006

$CF_4$ gas is one of the most common chemicals used for dry etching in semiconductor manufacturing processes. For application to the etching process and environmental control, the low-pressure inductively coupled plasma (LP-ICP) was employed to obtain the spectrum of $CF_4$ gas. In terms of the analysis of the spectra, trace CF radical by A-X and B-X transitions was detected. The other $CF_x$ radicals, such as $CF_2$ and $CF_3$, were not seen in this experiment whereas strong C and $C_2$ emissions, dissociation products of $CF_4$ gas, were observed.

• Journal of the Korean Vacuum Society
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• v.4 no.4
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• pp.417-424
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• 1995

전자 회전 공명 플라즈마 발생 장치에서 CF4를 방전시켰을 때 각종 플루오로카본 래디칼의 절대적, 상대적 밀도 변화를 수소 철가율, 동작 압력 그리고 축방향에 따라 appearace mass spectrometry(AMS)를 통해 조사하였으며, 플루오린 원자의 상대적 밀도 변화가 actinometry법에 의해 조사되었다. 수소첨가에 따른 CF2 래디칼의 거동을 actinometry와 AMS로 살펴보았을 때 서로 일치하는 경향을 얻었으며 마이크로웨이브전력 500W, 압력 7.5mTorr에서 CF3와 CF2 래디칼의 밀도가 CF에 비해 높았으며 각각 2X1013/㎤, 1X1013/㎤의 값을 가졌다. 수소를 첨가함에 따라 플루오린 원자와 CF3의 밀도는 감소하는 반면 CF2와 CF의 밀도는 현저히 증가하여 수소가 40% 첨가된 경우 CF2의 밀도가 CF3보다 커짐을 확인하였다. 또한, CF2가 증가하면서 C2F4의 존재가 확인되었으며, 수소가 30% 첨가된 경우 축방향을 따라 C2F4래디캄만이 증가하였고 플루오린 원자는 감소하는 반면 다른 CFx(x=1~3)래디칼은 거의 변화가 없었다. 이러한 실험 결과를 토대로 CF4+H2 플라즈마를 이용한 산화막 식각 특성이 설명되었다.

• Journal of the Chungcheong Mathematical Society
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• v.13 no.1
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• pp.71-78
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• 2000

The main goal of this paper is to prove the following theorem ; Let (X, ${\rho}_1$) be a fuzzy normed linear space over K and (Y, ${\rho}_2$) be a fuzzy Banach space over K. If ${\chi}_{B_{{\parallel}{\cdot}{\parallel}}}{\supseteq}{\rho}*$, then (CF(X,Y), ${\rho}*$) is a fuzzy Banach space, where ${\rho}*(f)={\vee}{\lbrace}{\theta}{\wedge}\frac{1}{t({\theta},f)}\;{\mid}\;{\theta}{\in}(0,1){\rbrace}$, $f{\in}CF(X,Y)$, $B_{{\parallel}{\cdot}{\parallel}}$ is the closed unit ball on (CF(X, Y), ${\parallel}{\cdot}{\parallel}$ and ${\parallel}f{\parallel}={\vee}{\lbrace}P^2_{{\alpha}^-}(f(x))\;{\mid}\;P^1_{{\alpha}^-}(x)=1,\;x{\in}X{\rbrace}$, $f{\in}CF(X,Y)$, ${\alpha}{\in}(0,1)$.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.16 no.5
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• pp.378-384
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• 2003

Etching species in CF$_4$/Ar plasma and the behavior of etching rate of Bi$_4$-$_{x}$L$_{x}$rTi$_3$O$_2$ (BLT) films were investigated in inductively coupled plasma (ICP) reactor in terms of etch parameters. The etching rate as functions of CF$_4$ contents showed the maximum 803 $\AA$/min at 20% CF$_4$ addition in CF$_4$/Ar plasma. The increase of RF power and DC bias voltage caused to an increase of etch rate. The variation of relative volume densities for F and he atoms were measured with the optical emission spectroscopy (OES). The chemical states of BLT were investigated with using X-ray photoelectron spectroscopy (XPS). XPS narrow scan analysis shows that La-fluorides remained on the etched surface. The presence of maximum etch rate at CF$_4$(20%)/Ar(80%) may be explained by the concurrence of two etching mechanisms such as physical sputtering and chemical reaction. The roles of he ion bombardment include destruction of metal (Bi, La, Ti)-O bonds as well as assistant for chemical reaction of metals with fluorine atoms.oms.

• Journal of the Chungcheong Mathematical Society
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• v.18 no.1
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• pp.41-49
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• 2005

In this paper, we prove the generalized Hyers-Ulam- Rassias stability of the functional equation $$af(\frac{x+y+z}{b})+af(\frac{x-y+z}{b})+af(\frac{x+y-z}{b})+af(\frac{-x+y+z}{b})=cf(x)+cf(y)+cf(z)$$.

• Journal of the Chungcheong Mathematical Society
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• v.16 no.2
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• pp.11-21
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• 2003

In this paper, we solve the following functional equation $$af\(\frac{x+y+z}{b}\)+af\(\frac{x-y+z}{b}\)+af\(\frac{x+y-z}{b}\)+af\(\frac{-x+y+z}{b}\)=cf(x)+cf(y)+cf(z)$$, and prove the Hyers-Ulam-Rassias stability of the functional equation as given above.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.14 no.12
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• pp.959-964
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• 2001

We investigated the etching characteristics of YMnO$_3$ thin films in high-density plasma etching system. In this study, YMnO$_3$ thin films were etched with CF$_4$/Ar gas chemistries in inductively coupled plasma(ICP). Etch rates of YMnO$_3$ increased up to 20% CF$_4$ in CF$_4$/(CF$_4$+Ar), but decreased with furthermore increasing CF$_4$ in CF$_4$/(CF$_4$+Ar). In optical emission spectroscopy (OES) analysis, F radical and Ar* ions in plasma at various gas chemistries decreased with increasing CF$_4$ content. Chemical states of YMnO$_3$ films exposed in plasma were investigated with x-ray photoelectron spectroscopy (XPS) and secondary ion mass spectrometry (SIMS). There is a chemical reaction between metal (Y, Mn) and F and metal-fluorides were removed effectively by Ar ion sputtering. YF$_{x}$, MnF$_{x}$ such as YF, YF$_2$, YF$_3$ and MnF$_3$ were detected using SIMS analysis. The etch slope is about 65$^{\circ}$ and cleasn surface. surface of the etched YMnO$_3$ thin films was investigated with X-ray photoelectron spectroscopy (XPS) and secondary ion mass spectrometry (SIMS). The etch profile was also investigated by scanning electron microscopy (SEM).EM).

• Bulletin of the Korean Chemical Society
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• v.13 no.5
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• pp.556-559
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• 1992

Hydrocarbon solution of $(PPh_3)_2(CO)MOSO_2CF_3$ (M= Rh, Ir) reacts rapidly with 1,4-dicyanobenzene or 1,4-dicyano-2-butene to yield dinuclear metal complexes $[(PPh_3)_2(CO)M({\mu}-dicyanobenzene)M(CO)(PPh_3)_2](SO_3CF_3)_2$ (I: M = Rh; II: M = Ir) or $[(PPh_3)_2(CO)M({\mu}-dicyano-2-benzene)M(CO)(PPh_3)_2](SO_3CF_3)_2$ (III: M = Rh; IV: M = Ir), respectively. Compounds I, II, III, and IV were characterized by $^1H$-NMR, $^{31}P$-NMR, and infrared spectrum. Dichloromethane solution of II and IV reacts with $H_2\;and\;I_2$ to yield oxidative addition complexes $[(PPh_3)_2(CO)IrX_2({\mu}-E)X_2Ir(CO)(PPh_3)_2](SO_3CF_3)_2$ (V; E = 1,4-dicyanobenzene, $X_2$ = $H_2$; VI : E = 1,4-dicyano-2-butene, $X_2$ = $H_2$; VII; E = 1,4-dicyanobenzene, $X_2$ = $I_2$). All metal complexes are bridged by the cyanide groups. Compounds Ⅴ, Ⅵ, and Ⅶ are characterized by conventional methods.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.05b
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• pp.12-16
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• 2001

We investigated the etching characteristics of $YMnO_3$ thin films in high-density plasma etching system. In this study. $YMnO_3$ thin films were etched with $CF_{4}/Ar$ gas chemistries in inductively coupled plasma (ICP). Etch rates of $YMnO_3$ were measured according to gas mixing ratios. The maximum etch rate of $YMnO_3$ is 18 nm/min at $CF_{4}/(CF_{4}+Ar)$ of 20%. In optical emission spectroscopy (OES) analysis, F radical and Ar* ions in plasma at various gas chemistries decreased with increasing $CF_4$ content. Chemical states of $YMnO_3$ films exposed in plasma were investigated with x-ray photoelectron spectroscopy (XPS) and secondary ion mass spectrometry (SIMS). There is a chemical reaction between metal (Y, Mn) and F and metal-fluorides were removed effectively by Ar ion sputtering. $YF_x$, $MnF_x$ such as YF, $YF_2$, $YF_3$ and $MnF_3$ Were detected using SIMS analysis. The etch slope is about $65^{\circ}C$ and free of residues.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.16 no.4
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• pp.298-303
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• 2003

Bi$_4$-$_{x}$EU$_{x}$Ti$_3$O$_{12}$ (BET) thin films were etched by inductively coupled CF$_4$/Ar plasma. We obtained the maximum etch rate of 78 nm/min at the gas mixing ratio of CF$_4$(10%)/Ar(90%). The variation of volume density for F and Ar atoms are measured by the optical emission spectroscopy. As CF$_4$increased in CF$_4$/Ar plasma, the emission intensities of F increase, but Ar atoms decrease, which confirms our suggestion that emission intensity is proportional to the volume density of atoms. From X-ray photoelectron spectroscopy, the intensities of the Bi-O, the Eu-O and the Ti-O peaks are changed. By pure Ar plasma, intensity peak of the oxygen-metal (O-M : TiO$_2$, Bi$_2$O$_3$, Eu$_2$O$_3$) bond was seemed to disappear while the intensity of pure oxygen peak showed an opposite tendency. After the BET thin films was etched by CF$_4$/Ar plasma, the peak intensity of O-M bond increase slowly, but more quickly than that of peak belonged to pure oxygen atoms due to the decrease of Ar ion bombardment. Scanning electron microscopy was used to investigate etching Profile. The Profile of etched BET thin film was over 85$^{\circ}$./TEX>.