• ETRI Journal
• /
• v.29 no.1
• /
• pp.70-78
• /
• 2007

A new low-voltage CMOS interface circuit with digital output for piezo-resistive transducer is proposed. An input current sensing configuration is used to detect change in piezo-resistance due to applied pressure and to allow low-voltage circuit operation. A simple 1-bit first-order delta-sigma modulator is used to produce an output digital bitstream. The proposed interface circuit is realized in a 0.35 ${\mu}m$ CMOS technology and draws less than 200 ${\mu}A$ from a single 1.5 V power supply voltage. Simulation results show that the circuit can achieve an equivalent output resolution of 9.67 bits with less than 0.23% non-linearity error.

• Journal of Power Electronics
• /
• v.14 no.4
• /
• pp.796-805
• /
• 2014

A digital controller with a low-power approach for point-of-load synchronous buck converters is discussed and compared with its analog counterpart to confirm its feasibility for system integration. The tri-mode digital controller IC in $0.35{\mu}m$ CMOS process is presented to demonstrate solutions that include a PID, quarter PID, and robust RST compensators. These compensators address the steady-state, stand-by, and transient modes according to the system operating point. An idle-tone free condition for ${\Sigma}-{\Delta}$ DPWM reduces the inherent tone noise under DC-excitation. Compared with that of the traditional approach, this condition generates a quasi-pure modulation signal. Experimental results verify the closed-loop performances and confirm the power-saving mechanism of the proposed controller.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
• /
• 2010.05a
• /
• pp.818-821
• /
• 2010

본 논문에서는 차량 레이더 시스템용 시그마-델타 변조기를 제안한다. 개발된 변조기는 차량 레이더 시스템에서 고주파 대역 신호의 고해상도 데이터 변환, 즉 아날로그-디지털변환을 수행하는데 사용되며 저전압 및 저 왜곡 특성을 가진 몸체효과 보상형 스위치 구조로 구현되어 있다. 제안된 변조기는 0.25 마이크론 이중 폴리 3-금속 표준 CMOS 공정으로 제작되었고, $1.9{\times}1.5mm^2$의 다이 면적을 점유한다. 제안된 회로는 2.7V의 동작 전압에서 기존의 부트스트랩형 회로보다 약 20dB 향상된 우수한 총 고조파 왜곡 특성을 보였다.

• Proceedings of the KIEE Conference
• /
• 2003.11c
• /
• pp.890-893
• /
• 2003

In this paper, we have designed the fractional-N frequency synthesizer for bluetooth system using 0.35-um CMOS technology and 3.3-V single power supply. The designed synthesizer consist of phase-frequency detector (PFD), charge pump, loop filter, voltage controlled oscillator (VCO), frequency divider, and sigma-delta modulator. A dead zone free PFD is used and a modified charge pump having active cascode transistors is used. A Multi-modulus prescaler having CML D flip-flop is used and VCO having a tuning range from 746 MHz to 2.632 GHz at 3.3 V power supply is used. Total power dissipation is 32 mW and phase noise is -118 dBc/Hz at 1 MHz offset.

• Journal of the Institute of Electronics Engineers of Korea SD
• /
• v.48 no.4
• /
• pp.32-38
• /
• 2011

This paper describes implementation of the 5.0GHz RF frequency synthesizer with 0.18${\mu}m$ silicon CMOS technology being used as an application of the IEEE802.15.4 USN sensor node transceiver modules. To get good performance of speed and noise, design of the each module like VCO, prescaler, 1/N divider, fractional divider with ${\Sigma}-{\Delta}$ modulator, and common circuits of the PLL has been optimized. Especially to get excellent performance of high speed and wide tuning range, N-P MOS core structure and 12 step cap banks have been used in design of the VCO. The chip area including pads for testing is $1.1{\times}0.7mm^2$, and the chip area only core for IP in SoC is $1.0{\times}0.4mm^2$. Through analysing of the fabricated frequency synthesizer, we can see that it has wide operation range and excellent frequency characteristics.

• Journal of the Institute of Electronics Engineers of Korea SD
• /
• v.45 no.7
• /
• pp.44-51
• /
• 2008

A stereo audio digital-to-analog converter (DAC) with a power amplifier using asymmetric pulse-width modulation (PWM) is presented. To adopt class-D amplifier mainly used in high-power audio appliances for head-phones application, this work analyzes the noise caused by the inter-channel interference during the integration and optimizes the design of the sigma-delta modulator to decrease the performance degradation caused by the noise. The asymmetric PWM is implemented to reduce switching noise and power loss generated from the power amplifier. This proposed architecture is fabricated in 0.13-mm CMOS technology. The proposed audio DAC including the power amplifier with single-ended output achieves a dynamic range (DR) of 95-dB dissipating 4.4-mW.

• Journal of the Institute of Electronics and Information Engineers
• /
• v.53 no.12
• /
• pp.57-63
• /
• 2016

This paper describes implementation of the RF frequency synthesizer with $0.18{\mu}m$ silicon CMOS technology being used as an application of the IEEE802.15.4g SUN sensor node transceiver modules. Design of the each module like VCO, prescaler, 1/N divider, ${\Delta}-{\Sigma}$ modulator, and common circuits of the PLL has been optimized to obtain high speed and low noise performance. Especially, the VCO has been designed with NP core structure and 13 steps cap-bank to get high speed, low noise, and wide band tuning range. The output frequencies of the implemented synthesizer is 1483MHz~2017MHz, the phase noise of the synthesizer is -98.63dBc/Hz at 100KHz offset and -122.05dBc/Hz at 1MHz offset.

• Journal of the Institute of Electronics Engineers of Korea SD
• /
• v.46 no.5
• /
• pp.49-54
• /
• 2009

This paper describes implementation of the 1.9GHz RF frequency synthesizer with $0.18{\mu}m$ silicon CMOS technology being used as an application of the USN sensor node transceiver modules. To get good performance of speed and noise, design of the each module like VCO, prescaler, 1/N divider, fractional divider with ${\Sigma }-{\Delta}$ modulator, and common circuits of the PLL has been optimized. Especially to get good performance of speed, power consumption, and wide tuning range, N-P MOS core structure has been used in design of the VCO. The chip area including pads for testing is $1.2{\times}0.7mm^2$, and the chip area only core for IP in SoC is $1.1{\times}0.4mm^2$. The test results show that there is no special spurs except -63.06dB of the 6MHz reference spurs in the PLL circuitry. There is good phase noise performance like -116.17dBc/Hz in 1MHz offset frequency.

• Journal of the Institute of Electronics Engineers of Korea CI
• /
• v.45 no.6
• /
• pp.87-93
• /
• 2008

This paper describes implementation of the 5.0GHz RF frequency synthesizer with $0.18{\mu}m$ silicon CMOS technology being used as an application of the IEEE802.15.4 USN sensor node transceiver modules. To get good performance of speed and noise, design of the each module like VCO, prescaler, 1/N divider, fractional divider with ${\Sigma}-{\Delta}$ modulator, and common circuits of the PLL has been optimized. Especially to get good performance of speed, power consumption, and wide tuning range, N-P MOS core structure has been used in design of the VCO. The chip area including pads for testing is $1.1*0.7mm^2$, and the chip area only core for IP in SoC is $1.0*0.4mm^2$. Through comparing and analysing of the designed two kind of the frequency synthesizer, we can conclude that if we improve a litter characteristics there is no problem to use their as IPs.

• Journal of the Institute of Electronics Engineers of Korea SD
• /
• v.45 no.5
• /
• pp.40-49
• /
• 2008

A Frequency synthesizer for mobile-DTV applications is implemented using $0.18{\mu}m$ CMOS process with 1.8V supply. PMOS transistors are chosen for VCO core to reduce phase noise. The measurement result of VCO frequency range is 800MHz-1.67GHz using switchable inductors, capacitors and varactors. We use varactor bias technique for the improvement of VCO gain linearity, and the number of varactor biasing are minimized as two. VCO gain deterioration is also improved by using the varactor switching technique. The VCO gain and interval of VCO gain are maintained as low and improved using the VCO frequency calibration block. The sigma-delta modulator for fractional divider is designed by the co-simualtion method for accuracy and efficiency improvement. The VCO, PFD, CP and LF are verified by Cadence Spectre, and the sigma-delta modulator is simulated using Matlab Simulink, ModelSim and HSPICE. The power consumption of the frequency synthesizer is 18mW, and the VCO has 52.1% tuning range according to the VCO maximum output frequency. The VCO phase noise is lower than -100dBc/Hz at 1MHz at 1MHz offset for 1GHz, 1.5GHz, and 2GHz output frequencies.