• Communications of the Korean Mathematical Society
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• v.20 no.2
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• pp.339-350
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• 2005

We obtain the following two inequalities on a strongly pseudoconvex domain $\Omega\;in\;\mathbb{C}^n\;:\;for\;f\;{\in}\;O(\Omega)$ $$\int_{0}^{{\delta}0}t^{a{\mid}a{\mid}+b}M_p^a(t, D^{a}f)dt\lesssim\int_{0}^{{\delta}0}t^{b}M_p^a(t,\;f)dt\;\int_{O}^{{\delta}O}t_{b}M_p^a(t,\;f)dt\lesssim\sum_{j=0}^{m}\int_{O}^{{\delta}O}t^{am+b}M_{p}^{a}\(t,\;\aleph^{i}f\)dt$$. In [9], Shi proved these results for the unit ball in $\mathbb{C}^n$. These are generalizations of some classical results of Hardy and Littlewood.

• Proceedings of the Korean Society for Technology of Plasticity Conference
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• 1996.10a
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• pp.29-37
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• 1996

A ductile fracture criterion, which has already proposed, namely, ($\Delta$1/1o)f at $\Delta$$\sigma$ m=(($\Delta$1/1o)f+(-1/tan$\theta$)$\Delta$$\sigma$m(where ($\Delta$1/1o)f is fracture elongation, $\Delta$$\sigma$m is mean stress variation) was made use of to study the working limit in axisymmetric extrusion. The present investigation is concerned with the application of theory on flow and fracture to the prediction of workability of materials in axisymmetric bar extrusion, with special reference to central bursting. The influenced of die geometry and manufacturing conditions on the central bursting are predicted.

• Journal of the Korean Electrochemical Society
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• v.3 no.2
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• pp.109-114
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• 2000

The relation between the phase-shift profile fur the intermediate frequencies and the Langmuir adsorption isotherm at the poly-Ir/0.1 M $H_2SO_4$ aqueous electrolyte interface has been studied using ac impedance measurements, i.e., the phase-shift methods. The simplified interfacial equivalent circuit consists of the serial connection of the electrolyte resistance $(R_s)$, the faradaic resistance $(R_F)$, and the equivalent circuit element $(C_P)$ of the adsorption pseudoca-pacitance $(C_\phi)$. The comparison of the change rates of the $\Delta(-\phi)/{\Delta}E\;and\;\Delta{\theta}/{\Delta}E$ are represented. The delayed phase shift $(\phi)$ depends on both the cathode potential (E) and frequency (f), and is given by $\phi=tan^{-1}[1/2{\pi}f(R_s+R_F)C_P]$. The phase-shift profile $(-\phi\;vs.\;E)$ for the intermediate frequency (ca. 1 Hz) can be used as an experimental method to determine the Langmuir adsorption isotherm $(\theta\;vs.\;E)$. The equilibrium constant (K) for H adsorption and the standard free energy $({\Delta}G_{ads})$ of H adsorption at the poly-Ir/0.1 M $H_2SO_4$ electrolyte interface are $2.0\times10^{-4}$ and 21.1kJ/mol, respectively. The H adsorption is attributed to the over-potentially deposited hydrogen (OPD H).

• KOREAN JOURNAL OF CROP SCIENCE
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• v.30 no.3
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• pp.217-222
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• 1985

The yield responses of three isogenic lines in plant type of paddy rice(open-, spread- and broom-type) as affected by combined treatments of transplanting densities (47.62, 22.22, 15.15, 11.11 and 8.33 hills per sq. meter) and rates of fertilizer application (0, 0.5, 1.0 and 1.5 folds of standard rate) were studied by using of the partial differentiations by planting density(D):df(D,F)/dD, fertilizer rate(F):df(D,F)/dF, and their interaction(DXF):d$^2$ f(D,F)/dDdF from the multiple regression polynominal equations. Under the condition of wider planting, the broom-type showed most prominent and sensitive responses in yield among others. Also the action of transplanting density in the broom-type were positive both at lower and higher densities. Under the lower densities, the broom-type represented positive actions both at lower and higher rates of fertilizer application. Whereas the interactions between the density and fertilizer rate under the lower densities were rather negative. To achieve the labor-saving by lower transplanting density(11-14 hills per sq. meter), the amount of fertilizer rates were estimated as 1.3-1.5 folds much of the standard in the open-type, whereas more than 1.5 folds in the broom-type. Thus, the potentials to absorb more amounts of fertilizer may explain the compensating function of the broom-type for equivalent yields of the standards at reduced transplanting densities.

• Korean Journal of Mathematics
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• v.18 no.1
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• pp.45-52
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• 2010

Generalizing $Lindel{\ddot{o}}f$ frames and almost compact frames, we introduce a concept of almost $Lindel{\ddot{o}}f$ frames. Using a concept of ${\delta}$-filters on frames, we characterize almost $Lindel{\ddot{o}}f$ frames and then have their permanence properties. We also show that almost $Lindel{\ddot{o}}f$ regular $D({\aleph}_1)$ frames are exactly $Lindel{\ddot{o}}f$ frames. Finally we construct an almost $Lindel{\ddot{o}}fication$ of a frame L via the simple extension of L associated with the set of all ${\delta}$-filters F on L with ${\bigvee}\{x^*{\mid}x{\in}F\}=e$.

• Journal of the Chungcheong Mathematical Society
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• v.16 no.2
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• pp.31-41
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• 2003

In this paper, we will show that the bounds for coefficients of harmonic, orientation-preserving, univalent mappings f defined on ${\Delta}$ = {z : |z| > 1} with $f({\Delta})={\Delta}$ are sharp by finding extremal functions.

• Journal of the Korean Wood Science and Technology
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• v.8 no.1
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• pp.22-27
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• 1980

Quantitative assessment of edge blunting of saw-teeth was carried out by TALYSURF. 1. Using the following equation, the real shape of a saw-tooth can be traced on the graph of TALYSURF. ${\frac{{\Delta}h}{h}}={\frac{V{\Delta}_x}{V_x}}$ {${\Delta}h$: vertical distance of stylus h: vertical distance in chart $V{\Delta}_x$: Velocity of stylus $V_x$: velocity of chart} 2. As shown on Fig 2, the error from stylus itself can be calculated by following equation. i) 13.8${\mu}{\leqq}$x<20.4${\mu}$ y=-0.2246x+4.59${\mu}$ ii) 0${\leqq}$x<13.8${\mu}$ y=${\sqrt{(-18{\mu})^2-x^2}}-1.42x+32.7{\mu}}$ 3. The relationship between profile of saw-tooth and error from stylus itself can be calculated by following equation. $E(%)=\frac{f(r){\times}{\frac{4}{18{\mu}}}}{f(R){\times}{\frac{R}{18.5{\mu}}}-f(r){\times}{\frac{r}{18{\mu}}}}{\times}100$ {E(%)${\frac{error\;of\;stylus}{dullness\;of\;saw\;tooth}}{\times}100$ r: radius of stylus tip R: radius of tip which is drawn in graph of talysurf f(r) : error of stylus f(R) : dullness of tip which is drawn in graph of talysurf} 4. The graph of maximum error and profile of saw-tooth was parabola.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.19 no.1
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• pp.1-6
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• 2006

High performance $Si_{0.8}Ge_{0.2}$ heterostructure metal-oxide-semiconductor field effect transistors (MOSFETs) were fabricated using well-controlled delta-doping of boron and $Si_{0.8}Ge_{0.2}$/Si heterostructure epitaxal layers grown by reduced pressure chemical vapor deposition. In this paper, we report 1/f noise characteristics of the SiGe pMOSFETs measured under various bias conditions of the gate and drain voltages changing in linear operation regions. From the noise spectral density, we found that the gate and drain voltage dependence of the noise represented same features, as usually scaled with $f^{-1}$ However, 1/f noise was found to be much lower in the device with boron delta-doped layer, by a factor of $10^{-1}_10^{-2}$ in comparison with the device fabricated without delta-doped layer. 1/f noise property of delta-doped device looks important because the device may replace bipolar transistors most commonly embedded in high-frequency oscillator circuits.

• Proceedings of the KIEE Conference
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• 2004.11a
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• pp.251-254
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• 2004

The aging diagnosis technique using partial discharge detection method detects partial discharge signals cause of power equipment failuer and able to forecast the aging state of insulation system through analysis algorithm, in this paper accumulates HFPD signal during constant scheduled cycles to build HFPD pattern and then analyzes HFPD pattern using statistical parameters and ${\Delta}F$ pattern. The 3D pattern is composed of detected signal frequency, amplitude and repeated number and the FRPDA(frequency resolved partial discharge analysis) technique is used in 3D pattern construction. The ${\Delta}F$ pattern shows variation characteristics of amplitude gradient of consecutive HFPD signal Pulses and able to classify discharge types-internal discharge, surface discharge and coronal discharge etc. Fractal mathematics applied to ${\Delta}F$ pattern quantification and neural networks is used in aging diagnostic algorithm.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2005.07a
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• pp.5-6
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• 2005

High performance SiGe heterostructure metal-oxide-semiconductor field effect transistors(MOSFETs) were fabricated using well-controlled delta-doping of boron and SiGe/Si heterostructure epitaxal layers grown by reduced pressure chemical vapor deposition. In this paper, we report 1/f noise characteristics of the SiGe MOSFETs measured under various bias conditions of the gate and drain voltages changing in linear operation regions. From the noise spectral density, we found that the gate and drain voltage dependence of the noise represented same features, as usually scaled with $f^1$. However, 1/f noise was found to be much lower in the device with boron delta-doped layer, by a factor of $10^{-1}\sim10^{-2}$ in comparion with the device fabricated without delta-doped layer. 1/f noise property of delta-doped device looks important because the device may replace bipolar transistors most commonly embedded in high-frequency oscillator circuits.