IGZO single layer and $IGZO/TiO_2$ bi-layered films were deposited on glass substrate at room temperature with radio frequency magnetron sputtering to investigate the effect of $TiO_2$ buffer layer on the electrical and optical properties of the films. For all deposition, the thickness of IGZO and $TiO_2$ Buffer layer was kept at 100 and 5 nm, respectively. In a comparison of figure of merit, IGZO films with a 5-nm-thick $TiO_2$ buffer layer show the higher figure of merit ($8.40{\times}10^{-5}{\Omega}^{-1}$) than that of the IGZO single layer films ($6.23{\times}10^{-5}{\Omega}^{-1}$) due to the enhanced optical transmittance and the decreased sheet resistance of the films. The observed results mean that a 5 nm thick $TiO_2$ buffer layer in the $IGZO/TiO_2$ films results in better electrical and optical performance than conventional IGZO single layer films.

$In_2O_3/Ti$ bi-layered films were deposited on glass substrate at room temperature with radio frequency (RF) and direct current (DC) magnetron sputtering to consider the effect of Ti buffer layer on the electrical and optical properties. In a comparison of figure of merit, $In_2O_3$ 90 nm/Ti 10 nm thin films show the higher opto-electrical performance of $3.0{\times}10^{-4}{\Omega}^{-1}$ than that of the $In_2O_3$ single layer films ($2.6{\times}10^{-4}{\Omega}^{-1}$). From the observed results, it is supposed that the $In_2O_3\;90nm/TiO_2$ 10 nm bi-layered films may be an alternative candidate for transparent electrode in a transparent thin film transistor device.

The aim of the present study was to predict the variations in microstructure and deformation occurring during gas carburizing and quenching processes of a SCM420H planetary gear in a real production environment using the finite element method (FEM). The motivation for the present study came from the fact that previous FEM simulations have a limitation of the application to the real heat treatment process because they were performed with material properties provided by commercial programs and heat transfer coefficients (HTC) measured from laboratory conditions. Therefore, for the present simulation, many experimentally measured material properties were employed; phase transformation kinetics, thermal expansion coefficients, heat capacity, heat conductivity and HTC. Particularly, the HTCs were obtained by converting the cooling curves measured with a STS304 gear without phase transformations using an oil bath with an agitator in a real heat treatment factory. The FEM simulation was successfully conducted using the aforementioned material properties and HTC, and then the predicted results were well verified with experimental data, such as the cooling rate, microstructure, hardness profile and distortion.

We have considered the influence of electron irradiation on the optical and electrical properties of $In_2O_3/Ti$ bi-layered films prepared with RF and DC magnetron sputtering. The $In_2O_3/Ti$ thin films irradiated at 600 eV shows the lowest resistivity of $6.9{\times}10^{-4}{\Omega}cm$. The optical transmittance in a visible wave length region also influenced with the electron irradiation energy. The film that electron irradiated at 600 eV shows 82.9% of optical transmittance in this study. By comparison of figure of merit, it is concluded that the opto-electrical performance of $In_2O_3/Ti$ bi-layered film is improved with electron irradiation.

Friction stir processing (FSP) was applied to fabricate AZ31/CNT (Carbon Nano Tube) surface composite for improvement of surface hardness of AZ31 Mg-based alloy. The effects of traverse speed of rotating tool and volume fraction of CNT (i.e., groove depth of 3 mm and 4 mm) on the soundness and hardness of the composite layer were investigated. Multi-walled CNTs were fully filled in a machined groove and stirring tool was rotated at the speed of 1400 rpm. Only under the tool traverse speed of 25 mm/min for the specimen with a groove depth of 3 mm, surface composite layer with no defect was successfully produced. Increased hardness of about 35% was observed in the composite layer.