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http://dx.doi.org/10.12656/jksht.2015.28.6.296

Effect of Ti Buffer Layer Thickness on the Electrical and Optical Properties of In2O3/Ti bi-layered Films  

Moon, Hyun-Joo (chool of Materials Science and Engineering, University of Ulsan)
Jeon, Jae-Hyun (Dongkook lnd. CO., Ltd.)
Gong, Tae-Kyung (chool of Materials Science and Engineering, University of Ulsan)
Kim, Daeil (chool of Materials Science and Engineering, University of Ulsan)
Publication Information
Journal of the Korean Society for Heat Treatment / v.28, no.6, 2015 , pp. 296-299 More about this Journal
Abstract
$In_2O_3/Ti$ bi-layered films were deposited on glass substrate at room temperature with radio frequency (RF) and direct current (DC) magnetron sputtering to consider the effect of Ti buffer layer on the electrical and optical properties. In a comparison of figure of merit, $In_2O_3$ 90 nm/Ti 10 nm thin films show the higher opto-electrical performance of $3.0{\times}10^{-4}{\Omega}^{-1}$ than that of the $In_2O_3$ single layer films ($2.6{\times}10^{-4}{\Omega}^{-1}$). From the observed results, it is supposed that the $In_2O_3\;90nm/TiO_2$ 10 nm bi-layered films may be an alternative candidate for transparent electrode in a transparent thin film transistor device.
Keywords
$In_2O_3$; Ti; Magnetron sputtering; Surface roughness; Figure of merit;
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Times Cited By KSCI : 1  (Citation Analysis)
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