In this research, policies, and technology trends associated with quantum computers were examined, and through this, implications for domestic methods were derived. It is not a guarantee that developing quantum computing technology suited for domestic use would be successful to emulate the success stories of technology-leading nations. Technology leaders like the United States, China, and Europe are putting together strategic technology blocks to compete for technological hegemony. Adapting to and exploiting this trend will help us develop future technologies and secure market competitiveness. The dominant technology in the area of quantum computing has not yet been established. In the future, there will be fair competition in every specific technology area. At this point, it may be claimed that making audacious decisions will still lead to technological superiority.

In the rapidly growing field of quantum computing, it is evident that a robust supply chain is needed for commercialization or large-scale production of quantum chips. As a result, the success of many R&D projects worldwide relies on the development of quantum chip foundries. In this paper, a variety of quantum chip foundries, particularly the ones creating photonic integrated circuit (PIC) quantum chips, are reviewed and summarized to demonstrate current technological trends. Global projects aiming to establish new foundries, as well as information regarding their respective funding, are also included to identify the evolutionary direction of quantum computing infrastructure. Furthermore, the potential application of lithium niobate as a novel material platform for quantum chips is also discussed.

Topological insulators (TIs) emerge as one of the most fascinating and amazing material in physics and electronics. TIs intrinsically possess both gapless conducting surface and insulating internal properties, instead of being only one property such as conducting, semiconducting, and insulating. The conducting surface state of TIs is the consequence of band inversion induced by strong spin-orbit coupling. Combined with broken inversion symmetry, the surface electronic band structure consists of spin helical Dirac cone, which allows spin of carriers governed by the direction of its momentum, and prohibits backscattering of the carriers. It is called by topological surface states (TSS). In this paper, we investigated the TIs materials and their unique properties and denoted the fabrication method of TIs such as deposition and exfoliation techniques. Since it is hard to observe the TSS, we introduced several specialized analysis tools such as angle-resolved photoemission spectroscopy, spin-momentum locking, and weak antilocalization. Finally, we reviewed the various fields to utilize the unique properties of TIs and summarized research trends of their applications.

Inkjet printing is a typical printing technology with many advantages, such as material cost reduction, noncontact pattern formation without a mask, and process simplification. With the recent and rapid development of ink materials, parts and equipment, and process technologies related to inkjet printing, it is becoming a major process in various areas of the display industry. In particular, for the QD-OLED (quantum dot-organic light-emitting diode) display announced by Samsung Display in 2022, quantum dot pixel production by applying inkjet printing is a key technology. We analyze inkjet printing technology for mass production applied to the display industry and discuss the technology development trends in academia and industry toward the realization of next-generation displays.

The increasing demand for ultra-high efficiency of compact power conversion systems for electric vehicle applications has brought GaN power semiconductors to the fore due to their low conduction losses and fast switching speed. In particular, the development of materials and core device processes contributed to remarkable results regarding the publication of vertical GaN power devices with high breakdown voltage. This paper reviews recent advances on GaN material technology and vertical GaN power device technology. The GaN material technology covers the latest technological trends and GaN epitaxial growth technology, while the vertical GaN power device technology examines diodes, Trench FETs, JFETs, and FinFETs and reviews the vertical GaN PiN diode technology developed by ETRI.

The announcement of the US Environmental Protection Agency that it will stop conducting or funding experimental studies on mammals by 2035 should prioritize ongoing efforts to develop and use alternative toxicity screening methods to animal testing. Toxicity screening is likely to be further developed considering the combination of human-induced pluripotent-stem-cell-derived organ-on-a-chip and multielectrode array (MEA) technologies. We briefly review the current status of MEA technology and MEA-based neuropharmacological drug screening using various cellular model systems. Highlighting the coronavirus disease pandemic, we shortly comment on the importance of early prediction of toxicity by applying artificial intelligence to the development of rapid screening methods.

Recently, preparations for 6G have led to the increasing interest in integrated or hybrid communication networks considering low-orbit satellite communication networks with terrestrial mobile communication networks. In addition, the demand for frequency allocation for new mobile services from low-orbit small satellites to provide global internet of things (IoT) services is increasing. The operation of such satellites and terrestrial mobile communication networks may inevitably cause interference in adjacent bands and the same band frequency between satellites and terrestrial systems. Focusing on the results of the recent ITU-R WP4C meeting, this study introduces the current status of frequency sharing and interference issues between satellites and terrestrial systems, and frequency allocation issues for new mobile satellite operations. Coexistence and compatibility studies with terrestrial IMT in L band and 2.6 GHz band, operated by Inmassat and India, respectively, and a new frequency allocation study (WRC-23 AI 1.18) are carried out to reflect satellite IoT demand. For the L band, technical requirements have been developed for emission from IMT devices at 1,492 MHz to 1,518 MHz to bands above 1,518 MHz. Related studies in the 2 GHz and 2.6 GHz bands are not discussed due to lack of contributions at the recent meeting. In particular, concerning the WRC-23 agenda 1.18 study on the new frequency allocation method of narrowband mobile satellite work in the Region 1 candidate band 2,010 MHz to 2,025 MHz, Region 2 candidate bands 1,695 MHz to 1,710 MHz, 3,300 MHz to 3,315 MHz, and 3,385 MHz to 3,400 MHz, ITU-R results show no new frequency allocation to narrow mobile satellite services. Given the expected various collaborations between satellites and the terrestrial component are in the future, interference issues between terrestrial IMT and mobile satellite services are similarly expected to continuously increase. Therefore, participation in related studies at ITU-R WP4C and active response to protect terrestrial IMT are necessary to protect domestic radio resources and secure additional frequencies reflecting satellite service use plans.

Decentralized autonomous organizations (DAOs) is an effective and secure means to enable direct collaboration between people who want to achieve common goals in a digital environment, where believing each other without intermediaries from trusted third parties is difficult. DAO can flexibly implement most of the roles previously performed by existing organizations and finally aim for a new structure that functions independently without human intervention. Despite its technical and legal uncertainties and problems, DAO is rapidly expanding. This study examines trends such as the concept, use cases, participation methods, and deficiencies of DAO, which is called the future of work and helps to understand upcoming considerations.