A simple method for real-time monitoring the molecular orientation in a polymeric film was suggested. This method was examined in the polarization holograms by two recording beams on a poly(malonic ester) containing disperse red 1. The spatial distributions of the photo-induced alignment were measured and analyzed at various polarization states of two recording beams. As the result, the directions of molecular alignments could be identified easily by our method.

For quantitative N depth profiling, N profiles were measured in a～3 m Si oxynitride by low energy O$\sub$2+/sputtering and the result was calibrated with MEIS analysis of the N thickness and areal density. The quantitative depth profile of nitrogen showed the pileup of nitrogen atoms at the interface of ultrathin oxynitride films.

Ni, Si and $SiO_2$ films were implanted by 350 keV B $i_{+}$ ions at room temperature with fluences of 1$\times$10$^{16}$ and 2$\times$10$^{16}$ ions/c $m^2$ The depth distributions of implanted B $i^{+}$ ions in Ni, Si and $SiO_2$ films were by investigated by Rutherford backscattering. The results show that the depth distributions of implanted B $i^{+}$ ions into Ni, Si and $SiO_2$ films have obeyed nearly Gaussian distributions. The maximum difference between experimental and calculated values is less than 18 % for mean projected range. Experimental range straggling deviated significantly from calculated value. The possible reasons are discussed.sed.d.

The physical properties, including magneto-optical and transport ones, of Ni$_2$MnG$_2$ alloy in the martensitic and austenitic states were investigated. The dependence of the temperature coefficient of resistivity on temperature shows kinks at the structural and ferro-para magnetic transitions. Electron-magnon and electron-phonon scattering are analyzed to be the dominant scattering mechanisms of the Ni$_2$MnG$_2$ alloy in the martensitic and austenitic states, respectively. The experimental real parts of the off-diagonal components of the dielectric function present two sharp peaks, one at 1.9 eV and the other at 3.2 eV, and a broad shoulder at 3.5 eV, all are identified by the band-structure calculations. These peak positions are coincident with those in the corresponding optical-conductivity spectrum, which is thought to originate from the single-spin state in Ni$_2$MnG$_2$ alloy.

Ti-0 film is a kind of biocompatible surface materials. In this paper, a new method, glow discharge plasma oxidizing, has been used in synthesizing Ti-O gradient films on Ti6A14V substrates. The effects of ion bombardment and process parameters on the structures of titanium oxide layers have been investigated. The results demonstrate that DC glow plasma oxidizing is more efficient in preparation of dense, hard, and high adhesive Ti-O biomedical films on titanium and its alloys. Samples treated by this method show higher hardness values than by others. Especially, in the condition of hollow cathode discharge, the ion bombardment enhances ionization of oxygen, promotes the oxygen permeation and facilitates the formation of the oxide of low valence states of titanium.

The process of energetic deposition has been simulated by using molecular dynamics (W) simulation and kinetic Monte Carlo (KMC) simulation. The atomistic mechanisms of film growth in energetic deposition are discussed.

We show that a combined technique of Cs$^{+}$ reactive ion scattering (Cs$^{+}$ RIS) and low-energy secondary ion mass spectrometry (LESIMS) provides a powerful means for probing molecular films and their surface reactions. Simple molecules, including HCI, NH$_3$, D$_2$O, and their mixtures, were deposited into a thin film of several monolayer thickness on Ru(001) at low temperature in vacuum, and the surface was characterized by Cs$^{+}$ RIS and LESIMS. On pure films, D$_2$O, HCI, and NH$_3$ existed in the corresponding molecular states. When HCI and NH$_3$ were co-deposited, ammonium ion(NH$_4$$^{+}$) was readily formed by proton transfer from HCI to NH$_3$. In the presence of water molecules, HCI ionized first to hydronium ion(H$_3$O$^{+}$), which subsequently transferred proton to NH$_3$ to form NH$_4$$^{+}$. The proton transfer, however, did not occur to a completion on ice, in contrast to the complete reaction in aqueous solutions.s solutions.

Molybdena powder was heated at both 660$^{\circ}C$ and 700$^{\circ}C$ for half-hour in an evaporation-deposition device. The molybdena thin films deposited on the surfaces of alumina ceramics displayed two kinds of fractal aggregates, i.e., the stackings of ribbon-like crystals and ramified palm-like structures. It is revealed from the experimental results that the microstructures of these fractal aggregates depended strongly on their growth conditions. The dynamics of fractal growth of molybdena thin film is discussed.

TiO$_2$/Fe$_2$O$_3$composite thin films were prepared on common glass substrates by sol-gel processing and dip-drawing method. The effect of Fe$_2$O$_3$content on the photocatalytic and hydrophilic properties of composite films was studied. The results indicate that the photocatalytic activities of composite TiO$_2$films are superior to that of pure TiO$_2$film, and the film containing 0.5% Fe$_2$O$_3$has the best photocatalytic activity. The hydrophilicity is difference with variant Fe$_2$O$_3$content, the films containing 0.05% ~0.1% Fe$_2$O$_3$have the best hydrophilicity and their contact angles are 0。.

We have theoretically investigated steady-state carrier transport and current self-oscillation in negative-effective-mass (NEM) p$\^$+/pp$\^$+/diodes. The current self-oscillation here is a result of the formation and traveling of electric field domains in the p base having a NEM. The dependence of self-oscillating frequency on the applied dc voltage is obtained by detailed numerical simulations. In the calculations, we have considered the scatterings by carrier-impurity, carrier-acoustic phonon, carrier-polar-phonon, and carrier-nonpolar-phonon-hole interactions . This kind of NEM oscillator allows us to reach a current oscillation with terahertz frequency, thus it may be used as a broadband source of terahertz radiation.

C-SiC films with different content of SiC on stainless steel substrate were prepared with ion beam mixing. It was found that hydrogen concentrations in C-SiC coatings was higher than that in stainless steel after H$\^$+/ ion implantation followed by thermal annealing. Infrared (IR) transmission measurement was used to study the mechanism of hydrogen retention by C-SiC films. The vibrational features in the range between 400 and 3200 cm$\^$-1/ in IR transmission spectra show the Si-CH$_3$, Si-CH$_2$, Si-H, CH$_2$and CH$_3$bonds, which are responsible for retaining hydrogen.

Polymer EL devices of glass/ITO/PI/MEH-PPV/Al structure were fabricated using spin coating and the Ionized Cluster Beam deposition technique. PMDA-ODA type thin polyimide films which can be used as a impurity blocking layer of EL device were deposited by ICB. According to our previous results, the packing densities of polyimide films were subject to change and depend on their deposition condition. By inserting a Pl layer with various thickness and packing density, I-V characteristics and life time of the devices were investigated to determine the role of a interlayer. The blocking of impurity diffusion from ITO to luminescent layer were confirmed by XPS.