Terahertz Oscillations in p-Type Quantum-Well Oscillators

  • Cao, J.C. (State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology) ;
  • Li, A.Z. (State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology)
  • Published : 2002.06.01

Abstract

We have theoretically investigated steady-state carrier transport and current self-oscillation in negative-effective-mass (NEM) p$\^$+/pp$\^$+/diodes. The current self-oscillation here is a result of the formation and traveling of electric field domains in the p base having a NEM. The dependence of self-oscillating frequency on the applied dc voltage is obtained by detailed numerical simulations. In the calculations, we have considered the scatterings by carrier-impurity, carrier-acoustic phonon, carrier-polar-phonon, and carrier-nonpolar-phonon-hole interactions . This kind of NEM oscillator allows us to reach a current oscillation with terahertz frequency, thus it may be used as a broadband source of terahertz radiation.

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