Journal of Korean Vacuum Science & Technology

The Korean Vacuum Society (한국진공학회)
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Study in Mechanism of Hydrogen Retention by C-SiC Films with IR

  • Huang, N.K. (Key Laboratory for Radiation Physics and Technology of Education Ministry of China Institute of Nuclear Science and Technology, Sichuan University) ;
  • Xiong, Q. (Key Laboratory for Radiation Physics and Technology of Education Ministry of China Institute of Nuclear Science and Technology, Sichuan University) ;
  • Liu, Y.G. (Key Laboratory for Radiation Physics and Technology of Education Ministry of China Institute of Nuclear Science and Technology, Sichuan University) ;
  • Yang, B. (Key Laboratory for Radiation Physics and Technology of Education Ministry of China Institute of Nuclear Science and Technology, Sichuan University) ;
  • Wang, D.Z. (Key Laboratory for Radiation Physics and Technology of Education Ministry of China Institute of Nuclear Science and Technology, Sichuan University)
  • Published : 2002.06.01
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Abstract

C-SiC films with different content of SiC on stainless steel substrate were prepared with ion beam mixing. It was found that hydrogen concentrations in C-SiC coatings was higher than that in stainless steel after H$\^$+/ ion implantation followed by thermal annealing. Infrared (IR) transmission measurement was used to study the mechanism of hydrogen retention by C-SiC films. The vibrational features in the range between 400 and 3200 cm$\^$-1/ in IR transmission spectra show the Si-CH$_3$, Si-CH$_2$, Si-H, CH$_2$and CH$_3$bonds, which are responsible for retaining hydrogen.

Keywords