This paper describes the carbonization characteristics of a phenolic resin deteriorated by tracking under the environment of a fire. In the experiment, a liquids droplet of 1[％] NaCl was dripped on the phenolic resin to cause a tracking with 110[V], 220[V] voltages applied. It can be addressed from the experimental results that when an insulator is carbonized by an external fire, its structure is amorphous. If an insulator is carbonized by electrical cause, on the other hand, its structure would be crystalline. In order to observe the surface change of the phenolic resin, the tracking process was analyzed by using SEM. In the case that the materials are carbonized under heat or fire, the exothermic peak appears around 500[$^{\circ}C$]. This is one of the important factors to determine the cause of fires. As a result of DTA, the exothermic peaks of an untreated sample showed at 333.4[$^{\circ}C$], 495.7[$^{\circ}C$] but those of a sample deteriorated by tracking appeared at 430.6[$^{\circ}C$], 457.6[$^{\circ}C$] in a voltage of 110[V], and at 456.2[$^{\circ}C$], 619.7[$^{\circ}C$] in a voltage of 220[V]. It is possible, therefore, to distinguish a virgin sample from carbonized samples(graphite) by the exothermic peak.

An O-mode Ultrashort Pulse Reflectometry (USPR) system has been designed and developed for the measurement of electron density profiles on the Sustained Spheromak Physics Experiment (SSPX) spheromak. In the original design of SSPX, peak densities were envisioned to be in the range of 0.5-3${\times}$10$^{14}$ cm$^{-3}$ . The total duration of formation and sustained discharges is typically ∼2 msec. Moreover, diagnostic access on SSPX is severely restricted. Such high density and short duration plasmas coupled with stringent diagnostic access are quite challenging for conventional reflectometer systems. In USPR, the SSPX diagnostic requirements have been successfully satisfied by employing up-converting mixers and monostatic horn/waveguide configuration. As a result, the USPR system has proven its applicability for the density measurement of a future fusion device. In the density profile measurements, the USPR system is capable of routinely generating density profiles with a temporal resolution of 57 $\mu$s. This paper presents details regarding the USPR fundamental principles, associated subsystems and laboratory tests as well as the experimental results obtained on SSPX

In this paper, we present the fabrication and characteristic analysis of Sagnac interferometric optical fiber senior(OFS) system for detecting pulsed ultrasonic signal in underwater. The hollow cylindrical mandrel wound round by single mode optical fiber is used as sensing component. The ultrasonic signal source is simulated by the PZT actuator operated by an function generator. The distance dependency of the OFS's sensitivity was measured. The sensitivity has been shown to be inversely propotional to the square-root of distance between ultrasonic source and sensing component. It has also been shown that the OFS could detect the signals less affected by ultrasonic path comparing to conventional acousto-electric sensor. and accurate location of ultrasonic signal could be carried out using two OFSs.

In this paper, the emission properties of electrodeless fluorescent lamp were discussed using the inductively coupled plasma. To transmit the electromagnetic energy into the chamber, a RF power of 13.56 [MHz] was applied to the antenna and considering the Ar gas pressure and the RF electric power change, the emission spectrum, Ar I line, luminance were investigated. At this time, the input parameter for ICP RF plasma, Ar gas pressure and RF power were applied in the range of 10∼60 [mTorr], 10∼300 [W], respectively. From emission intensity and lumnance intensity results, the mode transition from E-mode to H-mode was observed. This implies that this method can be used to find an optimal RF power for efficient light illumination in an electrodeless fluorescent lamp.

$CF_4$ gas is one of the most useful gases in modern technologies for semiconductor fabrication. However, there are many problems which should be solved in order to fabricate semiconductor device, for example, etching speed drop due to ion charge-up and etching selectivity drop due to the high electron energy. One of useful method in order to suppress their damages above is pulsed-time modulated plasma (PM). However, transient responses of charged particles occur when the source power is turned-on and -off in PM method. To control plasma properties in detail, such a transient phenomenon must be investigated. In this paper, we investigate $CF_4$ RF plasma properties under a one-dimensional fluid model. And also for dynamic and stable control of $CF_4$ plasmas, we investigated the transient behavior of the plasmas after step up or down of the amplitude of the power source voltage $V_s$(t). Fundamental properties of transient $CF_4$ plasmas was discussed. Furthermore, we intend to discuss new method for pulsed-time plasma modulation.

We have carried out a basic experiment in order to develope a super high-resolution optical microscope which transcend the limitation of diffraction and the wavelength of lightwave. The image of this scope is composed by measuring the evanescent wave which is localized on the surface of the testing materials. A detecting probe was fabricated with a single mode optical fiber to be sharpened by the chemical etching, and drived by PZT. The standing wave of $0.33\mu\textrm{m}$ wavelength evanescent wave which was generated from the $0.78\mu\textrm{m}$-wavelength semiconductor laser was detected by the $0.5\mu\textrm{m}$-thickness optical fiber probe.

A new laser Doppler velocimeter employing a $CO_2$ laser has been developed by using its photoacoustic effect. A change in the pressure of a discharge, induced by mixing of a returned wave with an originally existing wave inside the cavity, is employed to detect the Doppler frequency shift. We found that a Doppler frequency shift as much as 34 KHz was detected, and also a good linear relationship between the velocity and the Doppler frequency shift was obtained.

In this paper, we present a new combined field integral equation (CFIE) formulation for the analysis of electromagnetic scattering from arbitrarily shaped three-dimensional perfectly conducting and piecewise homogeneous dielectric composite body. The conducting/dielectric structures are approximated by planar triangular patches, which have the ability to conform to any geometrical surface. The surface covering the conducting body is replaced by an equivalent surface electric current and the surface of the dielectric by equivalent electric and magnetic currents. The all equivalent currents are approximated in terms of RWG (Rao, Wilton, Glisson) functions. The objective of this paper is to illustrate that the CFIE is a valid methodology in removing defects, which occur at a frequency corresponding to an internal resonance of the structure. Numerical results are presented and compared with solutions obtained using other formulations.

3D microstructures with different side-wall angles and different scales are fabricated by both methods of inclined exposure and rear-side exposure at each of selected areas on a same substrate. Conventional methods of inclined exposure are used to make side-walls with a same inclined angle on one substrate and to get a scale error due to front-side exposure through thick photoresist layer, But, by using the proposed method, we are able to fabricate 3D microstructures on a same substrate with various side-wall angles and accurate dimensions as the original design. In the rear-side exposure, UV exposure light reflects from the chromium mask pattern after passing through the thick photoresist layer, resulting in fabrication of well-defined, inclined 3D structures inside the thick photoresist layer.