The effects of accelerated Ultraviolet (UV) radiation on High temperature vulcanized (HTV), Room temperature vulcanized (RTV) silicone rubber and two types of ethylene propylene diene terpolymer (EPDM) used for composite insulator were inverstigated by hydrophobicity class (HC), surface voltage decay after corona charging, SEM-EDS, FTIR and XPS. The contact angle in two kinds of silicone rubber was scarcely change, but EPDM occurred to the loss of hydrophobicity followed by surface cracking and chalking. The surface voltage decay on UV-treated silicone rubber and EPDM showed a different decay trend with UV treatment. EDS and XPS analysis indicated that the oxygen content increased with UV treatment time in all samples. For silicone rubber, the oxidized groups of inorganic silica-like structure increased with UV treatment time. The oxidized carbon of C=0, O=C-O in EPDM increased. These oxidized surface for each material had different electrostatic characteristics, so deposited charges were expected to have different impacts on their surface hydrophobicity. The degradation mechanism based on our results was discussed.

The on-current of offset and LDD structured devices in slightly decreased while the off-current are remarkably reduced and almost constant independent of gate and drain voltage because offset and LDD regions behave as a series resistance and reduce the lateral electric field in the drain depletion. Degradation of these devices is dependent upon the offset and LDD length rather than doping concentration in these regions. Also, degradation mechanism has been related to the interface generation rather than the hot carrier injection into gate oxide.

The effects of accelerated Ultraviolet (UV) radiation on High temperature vulcanized (HTV), Room temperature vulcanized (RTV) silicone rubber and two types of ethylene propylene diene terpolymer (EPDM) used for composite insulator were investigated by hydrophobicity class (HC), surface voltage decay after corona charging, SEM-ES, FTIR and XPS. The contact angle in two kinds of silicone rubber was scarcely change, but EPDM occurred to the loss of hydrophobicity followed by surface cracking and chalking. The surface voltage decay on UV-treated silicone rubber and EPDM showed a different decay trend with UV treatment. EDS and XPS analysis indicated that the oxygen content increased with UV treatment time in all samples. For silicone rubber, the oxidized groups of inorganic silica-like structure increased with UV treatment time. The oxidized carbon of C=O, O=C-O in EPDM increased. These oxidized surface for each material had different electrostatic characteristics, so deposited charges were expected to have different impacts on their surface hydrophobicity. The degradation mechanism based on our results was discussed.

The mechanical and electrical properties of the hot-pressed and pressureless annealed SiC+39vol.%$TiB_2$electroconductive ceramic composites were investigated as a function of the liquid additives of $Al_2O_3+Y_2O_3$. The result of phase analysis for the SiC+39vol.%$TiB_2$composites by XRD revealed $\alpha$-SiC(6H), $TiB_2$, and $YAG(Al_5Y_3O_{12})4 crystal phase. The relative density of SiC+39vol.%$TiB_2$ composites was increased with increased $Al_2O_3+Y_2O_3$. contents. The fracture toughness showed the highest value of $7.8 MPa.m^{1/2}$ for composites added with 12 wt % $Al_2O_3+Y_2O_3$. additives at room temperature. The electrical resistivity and the resistance temperature coefficient showed the lowest value of $7.3\times10_{-4}\Omega.cm\; and\; 3.8\times10_{-3}/^{\circ}C$ for composite added with 12 wt% $Al_2O_3+Y_2O_3$. additives at room temperature. The electrical resistivity of the SiC+39vol.%$TiB_2$composites was all positive temperature coefficient resistance(PTCR) in the temperature ranges from $25^{\circ}C\; to\; 700^{\circ}C$.

The$(Sr_{1-x}Ca_x)TiO_3$(SCT) thin films are deposited on Pt-coated electrode $(Pt-TiN /SiO_2Si)$ using RF sputtering method at various deposition temperature. The crystallinity of thin films was increased with increased of deposition temperature n the temperature range of 200~500 $[^{\circ}C]$. The capacitance changes almost linearly in temperature ranges of -80~+90$[^{\circ}C]$. All SCT thin films used in the study the phenomena of dielectric relaxation with the increase of frequency, and the relaxation frequency is observed above 200[kHz]. V-I characteristics of SCT thin films show the increasing leakage current with the increases of deposition temperature.

Isolated phase bus(IPS) has a special structure for carrying large current generated by a generator to a main transformer. In the analysis of IPB, the understanding of the magnetic field distribution generated by large current is important. Especially, while the bus conductor current is flowing, almost same amount of current as bus conductor current is induced in the enclosures under the influence of time varying magnetic field, and therefore the large electric loss and the deterioration of insulating capability might occur due to Joule heating effect. Hence for the optimal design of IPB satisfying the condition to minimize the loss, the accurate analysis of magnetic field distribution and the eddy current characteristics of three phase isolated phase bus have been investigated. In the analysis of time varying magnetic field, instead of finite difference method(FDM) which is generally used, finite element method with phasor concept is investigated under the assumption that the bus current is purely sinusoidal. The characteristics is studied along the phase angle by comparing the effect of eddy current on the magnetic field distribution with the case that eddy current is not considered, and also the effect of material, thickness and radius of enclosure on the eddy current distribution is discussed.

The voltage controlled ramp(VCR) waveform has recently been introduced in the reset period prior to addressing for plasma display. However, this method shows the oscillation of gap voltage when the ramp rate is increased in order to reduce reset period. In this paper a current controlled ramp(CCR) waveform method is suggested. This method can suppress the oscillation of gap voltge under the condition of shorter ramp time. Moreover, the reset time can be reduced about 30% compared with VCR method under the same background luminance.

A large dispersion value in optical fiber cable should be maintained to suppress the nonlinear effect induced distortion for the narrow channel spaced DWDM system while small value of dispersion is needed for high bit rate transmission. To meet these two requirement simultaneously, dispersion distribution control method during the cabling process was exploited. And dispersion distribution cable was fabricated by the way of designing alternation sections in single cable piece with standard single mode fiber(SSMF) and newly developed negative dispersion fiber(NDF). It is shown that the discretely dispersion varying cable along the axis keep the same average dispersion value of an entire cable length as that of nonzero dispersion shifted fiber(NZDSF) with 3.6 ps/km/nm while the local dispersion is around 17 ps/km/nm of absolute value. Moreover, the developed cable had good optical and mechanical properties and the feasibility of this cable for practical use was confirmed.

The sputtering condition of Cr thin film was established in order to get Cr gate electrode having a vertical wall structure for Mo-tip FEA. In case of Mo-tip FEA which had a vertically-etched Cr gate electrode, the field enhancement factor, was relatively increased and so the field emission performance in terms of turn-on voltage, emission current and trans-conductance could be improved when compared with the devices having a tapered gate wall.