• 열처리공학회지
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• 제36권1호
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• pp.22-32
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• 2023

In general, when scrap is dissolved in an electric arc furnace, the amount of electric furnace steel dust (EAFD) generated is about 1.5% of the scrap charge amount, and the electric furnace steel dust collected by the bag filter is charged into the Rotary Kiln or Rotary Hearth Furnace (RHF), and the zinc component is recovered as crude zinc oxide, at which time a clinker of Fe-Base is generated. In this research, first, for the efficient resource conversion of electric furnace steel dust, a reduction and roasting experiment was conducted and the reaction kinetics was examined. As a result of the experiment, it was observed that the reduction and roasting reaction was actively conducted in the range of 1100~1150℃, and melting occurred in the range of 1250℃. In the past, this clinker was widely used as a roadbed material for road construction and an Fe-Source for cement production, but in recent years, it has been mainly reclaimed due to strengthening environmental standards. However, landfill treatment is by no means a desirable treatment method due to environmental pollution caused by leachate, expensive landfill costs, and waste of Fe resources. Therefore, in order to more actively recycle the Fe component in the clinker, first of all the clinker was pulverized into an optimal particle size, and anthracite and binder (starch) were added to the magnetic material obtained by specific gravity and magnetic separation for briquet. As a experimental results, it was possible to efficiently separate clinker as Fe component and other slag component by specific gravity and magnetic force. As a results of loading and dissolving the manufactured briquet clinker in an electric arc furnace, it was observed that the unit of power and production yield were clearly improved and the carbon addition effect in molten metal was also somewhat.

• Transactions on Electrical and Electronic Materials
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• 제18권3호
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• pp.141-143
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• 2017

Novel structured thin film transistors (TFTs) of amorphous silicon zinc tin oxide (a-SZTO) were designed and fabricated with a thin metal layer between the source and drain electrodes. A SZTO channel was annealed at $500^{\circ}C$. A Ti/Au electrode was used on the SZTO channel. Metals are deposited between the source and drain in this novel structured TFTs. The mobility of the was improved from $14.77cm^2/Vs$ to $35.59cm^2/Vs$ simply by adopting the novel structure without changing any other processing parameters, such as annealing condition, sputtering power or processing pressure. In addition, stability was improved under the positive bias thermal stress and negative bias thermal stress applied to the novel structured TFTs. Finally, this novel structured TFT was observed to be less affected by back-channel effect.

• Restorative Dentistry and Endodontics
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• 제11권1호
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• pp.77-88
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• 1985

The purpose of this study was to examine the thermal diffusion through bases and restorations. The three principle types of base and two restorative materials were included in this study. They were representive brands of a zinc phosphate cement, a zinc oxide-eugenol cement, a calcium hydroxide paste, an amalgam and a composite resin (table 1). The specimens were prepared by placing the bases or restorative materials in laminated plastic molds. 5-mm diameter holes were prepared in the center of square of plastics which were 0.5, 1.0, 2.0, and 3.0mm thick respectively (fig. 1). All materials were manipulated in accordance with manufacturer's recommended proportions. All experimental procedures were carried out dividing them into eight different groups (table 2). Thermal diffusion was measured by means of digital thermometer (DP-100, RKC. instrument Inc. JAPAN) with the surface thermocouple placed on bottom surface of the specimen applying a constant source of heat and cold to the top surface of the each specimen. The thermal stimulus temperature applied on the each specimen surface was in the range of $60^{\circ}C$, $0^{\circ}C$ and $-50^{\circ}C$ respectively. The thermal change were recorded automatically on the multi-Pen recorder (R-16, Rikadenki, Co. JAPAN) connected with thermocouple tips which were centered on the bottom of the specimen. The following results were as follows, 1. Temperature diffusion was highest through amalgam and slowest through the composite resin. 2. As the thickness of restorations increased, the temperature change was decreased. 3. Thermal diffusion was slowest in the presence of zinc oxide-eugenol bases, followed by calcium hydroxide and zinc phosphate cement. 4. The efficiency of the cement bases in providing thermal insulation was dependent on their thickness beneath the restorations. 5. Thermal change was great in the range of $60^{\circ}C$ and $-50^{\circ}C$, but little in the range of $0^{\circ}C$.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2011년도 제40회 동계학술대회 초록집
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• pp.255-255
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• 2011

Zinc oxide based thin films have been extensively studied in recent several years because they have very interesting properties and zinc oxide is non-poisonous, abundant and cheap material. ZnO films are employed in different applications like transparent conductive layers in solar cells, protective coatings and so on. Wide industrial application of the ZnO films requires of development of cheap, effective and scalable technology. Typically used technologies don't completely satisfy the industrial requirements. In the present work, we studied effect of the deposition parameters on the structure and properties of ZnO films deposited by DC arc plasmatron. The varied parameters were gas flow rates, precursor composition, substrate temperature and post-deposition annealing temperature. Vapor of Zinc acetylacetone was used as source materials, oxygen was used as working gas and argon was used as the cathode protective gas and a transport gas for the vapor. The plasmatron power was varied in the range of 700-1500 watts. Flow rate of the gases and substrate temperature rate were varied in the wide range to optimize the properties of the deposited coatings. After deposition films were annealed in the hydrogen atmosphere in the wide range of temperatures. Structure of coatings was investigated using XRD and SEM. Chemical composition was analyzed using x-ray photoelectron spectroscopy. Sheet conductivity was measured by 4-point probe method. Optical properties of the transparent ZnO-based coatings were studied by the spectroscopy. It was shown that deposition by a DC Arc plasmatron can be used for low-cost production of zinc oxide films with good optical and electrical properties. Increasing of the oxygen content in the gas mixture during deposition allow to obtain high-resistive protective and insulation coatings with high adhesion to the metallic surface.

• 대한금속재료학회지
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• 제49권10호
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• pp.818-822
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• 2011

ZnO nanorods were grown on Au-coated Si substrates by vapor phase transport (VPT) at the growth temperature of $600^{\circ}C$ using a mixture of zinc oxide and graphite powders as source material. Au thin films with the thickness of 5 nm were deposited by ion sputtering. Temperature-dependent photoluminescence (PL) was carried out to investigate the optical properties of the ZnO nanorods. Five peaks at 3.363, 3.327, 3.296, 3.228, and 3.143 eV, corresponding to the free exciton (FX), neutral donor bound exciton ($D^{\circ}X$), first order longitudinal optical phonon replica of free exciton (FX-1LO), FX-2LO, and FX-3LO emissions, were obtained at low-temperature (10 K). The intensity of these peaks decreased and their position was red shifted with the increase in the temperature. The FX emission peak energy of the ZnO nanorods exhibited an anomalous behavior (red-blue-red shift) with the increase in temperature. This is also known as an "S-shaped" emission shift. The thermal activation energy for the exciton with increasing temperature in the ZnO nanorods is found to be about 26.6 meV; the values of Varshni's empirical equation fitting parameters are = $5{\times}10^{-4}eV/K$, ${\beta}=350K$, and $E_g(0)=3.364eV$.

• Bulletin of the Korean Chemical Society
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• 제33권2호
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• pp.393-397
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• 2012

We report a new route to synthesize high quality zinc blende CdS and ZnS nanocrystals in noncoordinating solvent 1-octadecene, using dodecanethiol (DDT) molecules as both the sulfur source and surface capping ligands. Different reaction temperatures and Cd(Zn)/DDT molar ratios were tested to optimize the synthesis conditions. Absorption photoluminescence (PL) spectroscopy, Fourier transform infrared (FTIR) spectroscopy, X-ray diffraction (XRD) pattern, and transmission electron microscopy (TEM) were used to characterize assynthesized nanocrystals. The narrow half width at the half-maximum on the long wavelength side of the firstexcitonic absorption peak and TEM images demonstrated nearly monodisperse size distributions of asprepared CdS, ZnS, and CdS/ZnS core/shell nanocrystals. Only trap emissions of the nanocrystals were detected when the amount of DDT was excessive, this came from the strong quenching effect of thiol groups on the nanocrystal surfaces. After overcoating with ZnS shells, band-gap emissions of CdS nanocrystals were partially recovered.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2012년도 제42회 동계 정기 학술대회 초록집
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• pp.154-154
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• 2012

Flexible complementary inverters based on thin-film transistors (TFTs) are important because they have low power consumption and high voltage gain compared to single type circuits. We have manufactured flexible complementary inverters using pentacene and amorphous indium gallium zinc oxide (IGZO) for the p-channel and n-channel, respectively. The circuits were fabricated on polyimide (PI) substrate. Firstly, a thin poly-4-vinyl phenol (PVP) layer was spin coated on PI substrate to make a smooth surface with rms surface roughness of 0.3 nm, which was required to grow high quality IGZO layers. Then, Ni gate electrode was deposited on the PVP layer by e-beam evaporator. 400-nm-thick PVP and 20-nm-thick ALD Al2O3 dielectric was deposited in sequence as a double gate dielectric layer for high flexibility and low leakage current. Then, IGZO and pentacene semiconductor layers were deposited by rf sputter and thermal evaporator, respectively, using shadow masks. Finally, Al and Au source/drain electrodes of 70 nm were respectively deposited on each semiconductor layer using shadow masks by thermal evaporator. The characteristics of TFTs and inverters were evaluated at different bending radii. The applied strain led to change in voltage transfer characteristics of complementary inverters as well as source-drain saturation current, field effect mobility and threshold voltage of TFTs. The switching threshold voltage of fabricated inverters was decreased with increasing bending radius, which is related to change in parameters of TFTs. Throughout the bending experiments, relationship between circuit performance and TFT characteristics under mechanical deformation could be elucidated.

• 자원리싸이클링
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• 제32권1호
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• pp.50-59
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• 2023

전기로에서 고철(Scrap)의 용해과정에서 발생되는 분진량은 고철장입량의 약1.5%정도이며, 주로 백필터(Bag Filter)에서 포집된다. 전기로 제강분진의 주요한 구성원소인 아연(Zn)과 철(Fe)중에서 아연성분은, 제강분진에 탄소계의 환원재(코크스, 무연탄)와 석회석(C/S제어)을 첨가하여 Pellet형태로 가공한 후에 반응로(Rotary Kiln 또는 RHF)에 장입하여 환원, 휘발, 재산화의 단계적인 세부반응을 거쳐서, 60wt%Zn을 함유한 조산화아연(Crude Zinc Oxide)으로 회수된다. 한편 제강분진 중의 철(Fe)성분은, Fe-Base의 Clinker(2차부산물)라고 하는 고형물의 형태로 반응기로부터 배출된다. 기존의 Fe-Clinker의 처리방법은, 각국의 상황에 따라서 다양한 방안들이 시행되고 있는데, 대표적인 처리방법으로는 매립, 재활용(로반재, 콘크리트용 골재, 시멘트제조용 Fe-Source), 그 외에 다양한 처리방법들이 있다. 이들 방법들 중에서 매립의 경우는, 침출수에 의한 환경오염, 고가의 매립비용, Fe자원의 낭비 등의 이유로, 결코 바람직한 처리방법이라고 할 수는 없다. 그러나 Fe-Clinker중의 Fe성분을 전기로를 이용하여 직접적으로 재활용하는 방법에 대한 연구결과는 거의 찾아볼 수 없었다. 따라서 본 연구에서는 Fe-Clinker중의 Fe성분을 보다 적극적으로 회수하기 위한 방법으로서, 먼저 Fe-Clinker를 분쇄하고 이어서 비중선별과 자력선별을 순차적으로 실시하여, Fe-성분이 농축된 조분(Coarse particle, >약10㎛)과 슬래그성분을 주로 함유한 미분(Fine particle, <약10㎛)으로 분리하였다. 이렇게 분리한 조분에 탄소계 환원제(코크스, 무연탄)와 점결재(전분)를 첨가하여 단광 Clinker를 제조하여, 전기로에 고철을 장입할 때에 소량(1~3wt%)의 단광Clinker를 함께 장입하여, 단광Clinker의 첨가재(가탄재, Fe-Source, 발열재 등으로서의 역할)로서의 사용가능성을 조사하였다. 그 결과, 비록 소량이지만, 전력원단위와 생산수율이 다소 향상되는 효과를 나타내었으며, 용융금속에 대한 가탄효과도 확인할 수 있었다.

• Bulletin of the Korean Chemical Society
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• 제32권7호
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• pp.2316-2318
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• 2011

A novel technology has been developed for the synthesis of thioglycolic acid (TGA)-capped CdSe quantum dots (QDs) in aqueous medium. The reaction was carried out in air atmosphere with one-pot by using $SeO_2$ to replace Se or $Na_2Se$. The technological parameters including refluxing time, pH values and molar ratios of selenium to cadmium had significant influence on the luminescence properties of CdSe QDs. Furthermore, the obtained QDs were characterized by fluorescent spectroscopy, X-ray powder diffraction (XRD) and transmission electron microscopy (TEM), respectively. The results demonstrated that the CdSe QDs were of zinc-blended crystal structure in a sphere-like shape.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2008년도 하계학술대회 논문집 Vol.9
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• pp.307-308
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• 2008

Zinc oxide is a direct band gap wurtzite-type semiconductor with band gap energy of 3.37eV at room temperature. the n-type doped ZnO oxides, B doped ZnO (BZO) is widely studied in TCOs materials as it shows good electrical, optical, and luminescent properties. we focused on the fabrication of B doped ZnO films with glass substrate using the LSMCD at low temperature. And Novel boron-doped ZnO thin films were deposited and characterized from the structural, optical, electrical point of view. The structure, morphology, and optical properties of the films were studied as a function of by employing the XRD, SEM, Hall system and micro Raman system.