• Journal of the Korean Institute of Illuminating and Electrical Installation Engineers
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• v.29 no.7
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• pp.22-27
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• 2015

In this paper, the problem of voltage unbalancing in series-connected multiple electric double-layer capacitors(EDLCs) is studied. Good understanding of this problem is required in order to increase reliability and stability of an energy storage system comprising EDLCs. Existing methods to settle voltage unbalancing cannot mitigate the problem enough for each cell, since most method have been applied to each module. For equalizing between cells, Zener diode which is one of passive method have been well examined in literature. However, Zener have well not used in balancing due to heating problem. In addition, It is difficult to choose Zener diode fitted rating voltage of EDLC, because of its internal resistance. Thus, we proposed passive balancing using Zener diode by analyzing parasitic element of Zener and EDLC. To experimentally confirm the balancing effect, we compared in two occasions which are with and without passive. As a result, proposed passive balancing circuit mitigated unbalanced voltage gap between EDLCs.

• Journal of the Korean Institute of Gas
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• v.8 no.1 s.22
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• pp.18-24
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• 2004

This study issues the component's ratings when low powered do intrinsic safety instrumentations using in flammable atmospheres. Test of reverse bias of zener diode characteristics and ignition characteristics test for power source consist of zener diode and resistor have done using IEC spark test apparatus. With this test, the ratings for zener diode and resistor are calculated and the design method of intrinsically safe power supply system is reported.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.28 no.9
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• pp.555-560
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• 2015

This paper was proposed 900 V Power MOSFET with ESD protection circuits using zener diodes. And we were carried out and analyzed its electrical characteristics. As a result of designing 900 V power MOSFET, we obtained 1,000 V breakdown voltage, 3.49 V threshold voltage and $0.249{\Omega}{\cdot}cm^2$. And we designed ESD circuits using 2 series zener diode and 4 series zener diodes. After analyzing electrical characteristics, we obtained 26 V forward voltage drop and 47 V breakdown voltage. Therefore, This devices can enoughly use power module, SMPS and Automotive.

• Transactions on Electrical and Electronic Materials
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• v.14 no.1
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• pp.47-51
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• 2013

A high power MOSFET switch based on a 0.35 ${\mu}m$ CMOS process has been developed for the protection IC of a rechargeable battery. In this process, a vertical double diffused MOS (VDMOS) using 3 ${\mu}m$-thick epi-taxy layer is integrated with a Zener diode. The p-n+Zener diode is fabricated on top of the VDMOS and used to protect the VDMOS from high voltage switching and electrostatic discharge voltage. A fully integrated digital circuit with power devices has also been developed for a rechargeable battery. The experiment indicates that both breakdown voltage and leakage current depend on the doping concentration of the Zener diode. The dependency of the breakdown voltage on doping concentration is in a trade-off relationship with that of the leakage current. The breakdown voltage is obtained to exceed 14 V and the leakage current is controlled under 0.5 ${\mu}A$. The proposed integrated module with the application of the power MOSFET indicates the high performance of the protection IC, where the overcharge delay time and detection voltage are controlled within 1.1 s and 4.2 V, respectively.

• JSTS:Journal of Semiconductor Technology and Science
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• v.14 no.6
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• pp.797-801
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• 2014

This research presented the concept of employing the punch-through diode triggered SCRs (PTTSCR) for low voltage ESD applications such as transient voltage suppression (TVS) devices. In order to demonstrate the better electrical properties, various traditional ESD protection devices, including a silicon controlled rectifier (SCR) and Zener diode, were simulated and analyzed by using the TCAD simulation software. The simulation result demonstrates that the novel PTTSCR device has better performance in responding to ESD properties, including DC dynamic resistance and capacitance, compared to SCR and Zener diode. Furthermore, the proposed PTTSCR device has a low reverse leakage current that is below $10^{-12}$ A, a low capacitance of $0.07fF/mm^2$, and low triggering voltage of 8.5 V at $5.6{\times}10^{-5}$ A. The typical properties couple with the holding voltage of 4.8 V, while the novel PTTSCR device is compatible for protecting the low voltage, high speed ESD protection applications. It proves to be good candidates as ultra-low capacitance TVS devices.

• The Journal of the Korea institute of electronic communication sciences
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• v.17 no.1
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• pp.71-76
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• 2022

Since brightness is proportional to the operating current, a method of connecting several LEDs in series and driving with a constant current source is widely used for driving circuits of LED lights. Because several LEDs are connected in series, if some LEDs open due to a fault, the current path is broken and all other LEDs connected in series are turned off. In this paper, we designed a circuit to solve this problem by connecting a Zener diode having a breakdown voltage of about 0.4V higher than the LED operating voltage in parallel with each LED to create a current bypass in case of LED failure. Through simulations and experiments, it was confirmed that the current of the Zener diode hardly flows when the LED is operating normally, and that the Zener diode stably operates as a current bypass when the LED fails.

• ETRI Journal
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• v.35 no.4
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• pp.603-609
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• 2013

In this paper, we present a 600-V reverse conducting insulated gate bipolar transistor (RC-IGBT) for soft and hard switching applications, such as general purpose inverters. The newly developed RC-IGBT uses the deep reactive-ion etching trench technology without the thin wafer process technology. Therefore, a freewheeling diode (FWD) is monolithically integrated in an IGBT chip. The proposed RC-IGBT operates as an IGBT in forward conducting mode and as an FWD in reverse conducting mode. Also, to avoid the destructive failure of the gate oxide under the surge current and abnormal conditions, a protective Zener diode is successfully integrated in the gate electrode without compromising the operation performance of the IGBT.

• Journal of the Korean Institute of Telematics and Electronics
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• v.14 no.4
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• pp.15-21
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• 1977

In this paper, an analogical method for measuring the electrical characteristics of the silent discharge in the Na2CO3 electrolyte is proposed by using an electrical equivalent model which consist of charging and discharging circuits. The electrical equivalent model is constructed with the use of zener diode and capacitor, and the electrical characteristics can be obtained by the voltage and charge traces which appear a simple parallelogram on the oscilloscope. The area enclosed by the parallelogram could be considered of the energy input per cycle, and is independent of the applied voltage waveform but dependent on the maximum applied voltage.

• The Journal of Korean Institute of Communications and Information Sciences
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• v.5 no.1
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• pp.70-75
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• 1980

In this paper, it presents that novel Voltage-Controlled Nagativd-Resistance Circuit which composed by two Current mirror, and this presumes, interprets Co-operation of Circuit. Indeed, its to increase the peak Voltage Vp, whch is done by inserting a Zener Diode in series with R-experimental results and to presents the various Negative-Resistance Characteristic Confirmed with Conincided Substantially presumed realization of Circuit corperation and Calculated was Checked through experiments.

• Proceedings of the IEEK Conference
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• 2000.11b
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• pp.63-66
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• 2000

In this paper, we propose two new CMOS composite transistors with an improved operating region by reducing a threshold voltage. The proposed composite transistor 1 and 2 employ a P-type folded composite transistor and an electronic zener diode in order to decrease the threshold voltage, respectively. The simulation has been carried oui using 0.25$\mu\textrm{m}$ n-well process with 2.5V supply voltage.