• 한국안전학회지
• /
• 제32권2호
• /
• pp.34-37
• /
• 2017

In recent emerging industry, Display field becomes bigger and bigger, and also semiconductor technology becomes high density integration. In Flat Panel Display, there is an issue that electrostatic phenomenon results in fine dust adsorption as electrostatic capacity increases due to bigger size. Destruction of high integrated circuit and pattern deterioration occur in semiconductor and this causes the problem of weakening of thermal resistance. In order to solve this sort of electrostatic failure in this process, Soft X-ray ionizer is mainly used. Soft X-ray Ionizer does not only generate electrical noise and minute particle but also is efficient to remove electrostatic as it has a wide range of ionization. X-ray Generating efficiency has an effect on soft X-ray Ionizer affects neutralizing performance. There exist variable factors such as type of anode, thickness, tube voltage etc., and it takes a lot of time and financial resource to find optimal performance by manufacturing with actual X-ray tube source. MCNPX (Monte Carlo N-Particle Extended) is used for simulation to solve this kind of problem, and optimum efficiency of X-ray generation is anticipated. In this study, X-ray generation efficiency was measured according to target material thickness using MCNPX under the conditions that tube voltage is 5 keV, 10 keV, 15 keV and the target Material is Tungsten(W), Gold(Au), Silver(Ag). At the result, Gold(Au) shows optimum efficiency. In Tube voltage 5 keV, optimal target thickness is $0.05{\mu}m$ and Largest energy of Light flux appears $2.22{\times}10^8$ x-ray flux. In Tube voltage 10 keV, optimal target Thickness is $0.18{\mu}m$ and Largest energy of Light flux appears $1.97{\times}10^9$ x-ray flux. In Tube voltage 15 keV, optimal target Thickness is $0.29{\mu}m$ and Largest energy of Light flux appears $4.59{\times}10^9$ x-ray flux.

• 한국안전학회지
• /
• 제32권6호
• /
• pp.29-33
• /
• 2017

In order to solve this sort of electrostatic failure in Display and Semiconductor process, Soft X-ray ionizer is mainly used. Soft X-ray Ionizer does not only generate electrical noise and minute particle but also is efficient to remove electrostatic as it has a wide range of ionization. There exist variable factors such as type of tungsten thickness deposited on target, Anode voltage etc., and it takes a lot of time and financial resource to find optimal performance by manufacturing with actual X-ray tube source. Here, MCNPX (Monte Carlo N-Particle Extended) is used for simulation to solve this kind of problem, and optimum efficiency of X-ray generation is anticipated. In this study, X-ray generation efficiency was compared according to target material thickness using MCNPX and actual X-ray tube source under the conditions that tube voltage is 5 keV, 10 keV, 15 keV and the target Material is Tungsten(W). At the result, In Tube voltage 5 keV and distance 100 mm, optimal target thickness is $0.05{\mu}m$ and fastest decay time appears + decay time 0.28 sec. - deacy time 0.30 sec. In Tube voltage 10keV and distance 100 mm, optimal target Thickness is $0.16{\mu}m$ and fastest decay time appears + decay time 0.13 sec. - deacy time 0.12 sec. In the tube voltage 15 keV and distance 100 mm, optimal target Thickness is $0.28{\mu}m$ and fastest decay time appears + decay time 0.04 sec. - deacy time 0.05 sec.

• 한국안전학회지
• /
• 제33권2호
• /
• pp.28-31
• /
• 2018

In display and semi-conductor manufacturing process, there are numerous unstable factors such as particle concentration, minimal vibration, changes in magnetic field, or electrostatic that becomes an issue to be managed and controlled. In the recent, X-ray ionization is widely used that is neutralized by separating air or gas molecules in the area where the static must be resolved. The mono-type of X-ray ionizer was not capable to be used in $8^{th}$ generation panels manufacturing plant due to its insufficient ionizing coverage since the panel itself is approximately in $2m{\times}3m$. To resolve the current problem, the development of new type called, "Multi-type X-ray ionizer" has resulted in covering enough ionizing space in $8^{th}$ generation panels industry. Comparing mono and multi types with MCNPX code simulation, the multi one indicates more X-ray flux, efficiency, and ionization performance in comparison with either a mono-type or multi-type in array format. In addition, the ionizing efficiency of overlapping area with multi-type showed 30% higher effectiveness rate as to the ordinary mono-type.

• Journal of the Optical Society of Korea
• /
• 제13권1호
• /
• pp.80-85
• /
• 2009

An experimental study of energy absorption and x-ray emission from ultrashort laser pulse irradiation of in-situ produced solid clusters has been performed. Silver clusters produced by a 30 mJ, 300 ps laser pulse were irradiated up to an intensity of $3{\times}10^{17}\;W/cm^2$ by a 70 mJ, 45 fs compressed laser pulse from the same Ti:sapphire laser. Absorption of the laser light exceeding 70% was observed, resulting in an x-ray yield (>1 keV) of ${\sim}60{\mu}J$ pulse. This may constitute a much simpler means of intense x-ray generation using ultrashort laser pulses as compared to the irradiation of structured / pre-deposited cluster targets, and it offers higher x-ray conversion efficiency than that from gas clusters and planar solid targets.

• 한국전기전자재료학회논문지
• /
• 제24권1호
• /
• pp.36-41
• /
• 2011

Medical X-ray has been brought many changes according to the rapid development of high technology. Especially, for high-voltage generator which is the most important in X-ray generation the traditional way is to use high-voltage electric transformers primarily. However, since it is large and heavy and the ripple rate of DC high-voltage applied to X-ray tube is too big, it has a disadvantage of low X-ray production efficiency. To solve these problems, the studies about high-voltage power supply are now proceeding. At present, the high-voltage generator that generates high-voltage by making high frequency using inverter control circuit consisting of semiconductor device is mainly used. High-voltage generator using inverter has advantages in the diagnosis using X-ray including high performance with short-term use, miniaturization of power supply and ripple reduction. In this study, the X-ray high-voltage device with inverter type using pulse width modulation scheme to the control of tube voltage and tube current was designed and produced. For performance evaluation of produced device, the control signal analysis, irradiation dose change and beam quality depending on the load variation of tube voltage and tube current were evaluated.

• 한국재료학회:학술대회논문집
• /
• 한국재료학회 2002년도 추계학술발표강연 및 논문개요집
• /
• pp.127-127
• /
• 2002

• 한국정보통신학회:학술대회논문집
• /
• 한국해양정보통신학회 2010년도 추계학술대회
• /
• pp.771-772
• /
• 2010

환자의 진단에 유용하게 사용되고 있는 X선 장치는 X선을 인체에 조사할 때 나타나는 피폭이 큰 단점으로 지적되고 있으며 ICRP에서는 인체의 방사선 노출 허용량을 제한하고 있다. 이러한 피폭을 줄이기 위해 많은 연구 개발이 진행되고 있다. 본 연구에서는 X선의 발생 효율 증가 및 정밀한 출력 제어가 가능한 인버터 방식의 고전압 발생장치를 제작하였다. 또한 X선관에 인가되는 직류 고전압에 발생 가능한 리플을 최소화하기 위해 전파 정류방식을 적용하였으며, 이를 환자의 진단에 사용하기 위해 조사재현성 및 선질을 평가하였다.

• 한국전기전자재료학회논문지
• /
• 제23권7호
• /
• pp.534-538
• /
• 2010

X-ray systems for medical treatment use noninvasive procedures. Being capable of locally inspecting the inside of the body, X-ray systems are routinely used for basic diagnosis. X-ray systems to be used for medical purposes were originally made with a gas filled tube inside an induction coil in the initial stages of development but with this approach it becomes difficult to take a satisfactory picture through thick body sections, non invasively. However continued development made it possible to take non-invasive pictures of breasts, blood vessels and other body parts through thick body sections. Recently, high-voltage X-ray generators of more compact size, increased generation efficiency, and sophisticated output control have become possible. All of these features are made possible by the use of a high-frequency output from an inverter and a fast switching semiconductor device. In this paper, we describe a new X-ray generator operating with a resonant inverter in order to reduce switching loss and high frequency noise. In addition, in order to identify the differences amongst types of rectification, we have compared output and the quality of X-ray pictures obtained with full-wave rectification and dual-voltage rectification methods.

• 한국진공학회:학술대회논문집
• /
• 한국진공학회 2012년도 제43회 하계 정기 학술대회 초록집
• /
• pp.361-361
• /
• 2012

PZT (Pb(Zr,Ti)O3) thin films have been used widely in the MEMS application, due to their inherent ferroelectric and piezoelectric properties. Such ferroelectricity induces much higher dielectric constants compared to those of the nonperovskite materials. In this work, the PZT thin films were deposited onto Indium-Tin-oxide (ITO) substrates through the spin-coating of PZT sols. The deposited PZT thin films were characterized in terms of the electrical and optical properties with special emphases on conductivity and optical constants. The detailed analysis techniques incorporate the dc-based current-voltage characteristics for the electrical properties, spectroscopic ellipsometry for optical characterization, atomic force microscopy for surface morphology, X-ray Photoelectron Spectroscopy for chemical bonding, Energy-dispersive X-ray Spectrometry for chemical analyses and X-ray diffraction for crystallinity. The ferroelectric phenomena were confirmed using capacitance-voltage measurements. The integrated physical/chemical features are attempted towards energy-oriented applications applicable to next-generation high-efficiency power generation systems.

• 한국진공학회:학술대회논문집
• /
• 한국진공학회 2011년도 제41회 하계 정기 학술대회 초록집
• /
• pp.72-72
• /
• 2011

Surface science is intrinsically related to the performance of solar cells. In solar cells the generation and collection of charge carriers determines their efficiency. Effective transport of charge carriers across interfaces and minimization of their recombination at surfaces and interfaces is of utmost importance. Thus, the chemistry at the surfaces and interfaces of these devices must be determined, and related to their performance. In this talk we will discuss the role of two important interfaces, First, the role of surface passivation is very important in limiting the rate of carrier of recombination. Here we will combine x-ray photoelectron spectroscopy of the surface of a Si device with electrical measurements to ascertain what factors determine the quality of a solar cell passivation. In addition, the quality of the heterojunction interface in a ZnSe/CdTe solar cell affects the output voltage of this device. X-ray photoelectron spectroscopy gives some insight into the composition of the interface, while ultraviolet photoemission yields the relative energy of the two materials' valence bands at the junction, which controls the open circuit voltage of the solar cell. The relative energies of ZnSe and CdTe at the interface is directly affected by the material quality of the interface through processing.