• 한국초전도학회:학술대회논문집
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• 한국초전도학회 1999년도 High Temperature Superconductivity Vol.IX
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• pp.138-141
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• 1999

For the enhancement of communication system performance, high quality filters are required. Conventional metal filters made of copper can be substituted by high quality high temperature superconductivity(HIS) flms for better performance. In order to reduce the size of the filter for the integration of device in the limited area, we have fabricated hairpin type filters using pulsed laser deposition(PLD) technique. The superconducting YBCO thin films have been grown on MgO substrates by PLD with Nd:YAC laser. The YBCO films were patterned by conventional wet-etching process. We have compared YBCO filters and copper filters which were made with the same spec. Simulated and measured frequency responses reveal that HIS YBCO hairpin type bandpass filters show better performance than copper filters.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1998년도 하계학술대회 논문집 D
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• pp.1546-1548
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• 1998

Dual mode ring resonators(DMRR) have been fabricated using laser ablated $YBa_2Cu_3O_{7-x}$ superconducting thin films. The transition temperature of YBCO thin films were 85 - 88 K and the film thicknesses were about 5,000 $\AA$. Dual mode ring resonators were patterned by standard photolithography process and wet-etching. Then two-layer metal thin films (Ti/Ag) have been deposited for the ground plane on the back side of substrate by e-beam and thermal evaporation. The input/output feedline angles of each resonator were $60^{\circ}$, $100^{\circ}$, $180^{\circ}$. A network analyzer was used for testing the performance of the resonators in the frequency range of 6-13 GHz at 77 K.

• 제어로봇시스템학회논문지
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• 제14권4호
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• pp.361-364
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• 2008

Tips of probe card were fabricated using MEMS technology. P-type silicon wafer with $SiO_2$ layer was used as a substrate for fabricating the probe card. Ni-Cr and Au used as seed layer for electroplating Ni were deposited on the silicon wafer. Line patterns for probing devices were formed on silicon wafer by electroplating Ni through mold which formed by MEMS technology. Bridge structure was formed by wet-etching the silicon substrate. AZ-1512 photoresist was used for protection layer of back side and DNB-H100PL-40 photoresist was used for patterning of the front side. The mold with the thickness of $60{\mu}m$ was also formed using THB-120N photoresist and probe tip with thickness of $50{\mu}m$ was fabricated by electroplating process.

• 한국레이저가공학회지
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• 제14권2호
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• pp.13-16
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• 2011

We fabricated the Fresnel zone plate using femtosecond laser lithography-assisted micro-machining, which is a combined process of nonlinear lithography and wet etching. We investigated the focusing properties by launching a 632.8nm wavelength He-Ne laser beam into the zone plate. The spot size of the primary focal point was $27{\mu}m$ and the intensity of focal point was 0.565W/$cm^2$.

• 한국인쇄학회지
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• 제29권3호
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• pp.17-30
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• 2011

The polarizer is an important optical element used in a variety of applications. Nano-wire grid polarizers in the form of sub-wavelength metallic gratings are an attractive alternative to conventional polarizers, because they provide high extinction ratio. This study has been carried out to fabrication of the 17inch area size nano-wire grid polarizer(NWGP) The master for NWGPs with a pitch of 200nm and the area size $730mm{\times}450mm$ were fabricated using laser interference lithography and aluminum sputtering and wet etching. And The NWGP fabrication process was using by the Roll to-Roll UV imprinting and was applied to flexible PET film. The results were a transmission of light (Tp) 46.7%, reflectance (Rs) 40.1% and Extinction ratio of above 16 for the visible light range.

• 한국산학기술학회:학술대회논문집
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• 한국산학기술학회 2011년도 춘계학술논문집 1부
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• pp.347-350
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• 2011

본 논문에서는 습식식각 설비의 Process 동작 간에 발생되는 설비의 비 가동 시간을 최소화하여 Throughput을 향상시키기 위하여 Monitoring 한 결과 Recipe 변경, 액 교환 발생, Tact 변경 등의 공정간 조건에 따라 대기시간이 발생(생산 지연시간 발생) 하는 것을 확인 하고 이를 개선하기 위한 연구이다. 연구 방법으로, Recipe Data 적용 시점을 약액 구간 처리 완료 시점에서 후속 기판이 대기하지 않고 연속 투입을 실시, Chamber Drain과 약액 Tank 전환이 동시에 이루어지고 액 교환 동작 중 Pump Spray의 연속성을 유지하는 무정지 액 교환 Sequence 적용, Tact 적용 시점을 전 기판 배출 확인 후 실시하는 것을 약액 구간 처리 완료 후 적용의 3가지 방법을 6시그마의 DMAIC 기법을 활용하였다. 연구 결과 개선 전 비 가동 시간이 설비 대당 1일 28분 시그마 Level 3.40 이었던 것을 개선 후 설비 대당 1일 17분 시그마 Level 5.3 으로 개선됨을 확인 할 수 있다.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1997년도 하계학술대회 논문집 C
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• pp.1314-1316
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• 1997

In this study, We fabricated thin film magnetic core inductors by using thin film manufacturing techniques such as photolithography and wet etching process. The inductors were prepared using multi-layered CoNbZr/Cu/CoNbZr. These devices are measured at high frequency range of $1\;MHz{\sim}1\;GHz$.

• 대한전자공학회논문지
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• 제27권4호
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• pp.563-570
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• 1990

A silicon pressure sensor made of a full bridge of diffused resistors was designed and fabricated using semiconductor integrated circuit process. Thin diaphragms with 30\ulcorner thickness were obtained using anisotropic wet chemical etching technique. Our device showed strong temperature dependence. Compensation networks are used to compensate for the temperature dependence of the pressure sensor. The bridge supply voltage having positive temperature coefficient by compensation networks was utilized against the negative temperature coefficient of bridge output voltage. The sensitivity fluctuation of pressure sensor before temperature compensation was -1700 ppm/\ulcorner, while it reduced to -710ppm\ulcorner with temperature compensation. Our result shows that the we could develop accurate and reliable pressure sensor over a wide temperature range(-20\ulcorner~50\ulcorner).

• 전자공학회논문지A
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• 제33A권4호
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• pp.112-120
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• 1996

With the MOsES (mask oxide sidewall etch scheme)process which uses the conventional i-line stepper and isotropic wet etching, CMOSFET's with fine gate pattern of 0.1.mu.m CMOSFET device, the screening oxide is deposited before the low energy ion implantation for source/drain extensions and two step sidewall scheme is adopted. Through the characterization of 0.1.mu.m CMOSFET device, it is found that the screening oxide deposition sheme has larger capability of suppressing the short channel effects than two step sidewall schem. In cse of 200.angs.-thick screening oxide deposition, both NMOSFET and PMOSFET maintain good subthreshold characteristics down to 0.1.mu.m effective channel lengths, and show affordable drain saturation current reduction and low impact ionization rates.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1998년도 춘계학술대회 논문집
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• pp.41-44
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• 1998

Dual mode resonators were fabricated using high temperature superconductor. The deposited material was $Y_1Ba_2Cu_3O_{7-x}$(YBCO) on MgO(100) substrate using pulsed laser deposition. Dual mode resonators were patterned by standard photolithography process and wet etching. At the back-side of the substrate, the ground plane with the metal layer of Ti and Ag was fabricated. The transition temperatures of YBCO films were 85-88 K, and network analyzer was used for testing the performance of the resonators. The input/output feedline angles of each resonator were $60^{\circ}$and $100^{\circ}$. The resonant frequency of resonators was 10 GHz. In this paper, dual mode resonator was fabricated for the application of satellite communication.