• Journal of Mechanical Science and Technology
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• 제18권12호
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• pp.2294-2302
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• 2004

The objective of this study is to obtain detailed information for the micro fabrication of lead frames by applying spray technology to wet etching process. Wet etching experiments were performed with different etching parameters such as injection pressure, distance from nozzle tip to etched substrate, nozzle pitch and etchant temperature. The characteristics of single and twin spray were measured to investigate the correlation between the spray characteristics and the etching characteristics. Drop size and velocity were measured by Phase-Doppler Anemometer (PDA). Four liquids of different viscosity were used to reveal the effects of viscosity on the spray characteristics. The results indicated that the shorter the distance from nozzle tip and the nozzle pitch, the larger etching factor became. The average etching factor had good positive correlation with average axial velocity and impact force. It was found that the etching characteristics depended strongly on the spray characteristics.

• 반도체디스플레이기술학회지
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• 제5권2호
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• pp.41-46
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• 2006

Wet etching process in recent semiconductor manufacturing is devided into batch and single wafer type. Batch type wet etching process provides more throughput with poor etching uniformity compared to single wafer type process. Single wafer process achieves better etching uniformity by boom-swing injected chemical on rotating wafer. In this study, etching characteristics of $SiO_2$ layer at room and elevated temperature is evaluated and compared. The difference in etching rate and uniformity of each condition is identified, and the temperature profile of injected chemical is theoretically calculated and compared to that of experimental result. Better etching uniformity is observed with single wafer tool with boom-swing injection compared to single wafer process without boom-swing or batch type tool.

• 대한전자공학회:학술대회논문집
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• 대한전자공학회 2001년도 하계종합학술대회 논문집(2)
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• pp.237-240
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• 2001

In this paper, we have presented processing technique about wet etching for silicon membrane construction formation. In order to make selective etching of backside silicon wafer, we used Si$_3$N$_4$ layer by PECVD(Plasma Enhanced Chemical Vapor Deposition). We have measured the surface thickness in backside silicon wafer after anisortropic wet etching with KOH:distilled water solutions. Through this experiment, we acquired the etching rate for 1.29${\mu}{\textrm}{m}$/min. The average rough of Si-membrane frontside and backside was 0.26${\mu}{\textrm}{m}$, 0.90${\mu}{\textrm}{m}$, respectively.

• 마이크로전자및패키징학회지
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• 제19권4호
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• pp.19-23
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• 2012

최근 발광다이오드(LED)의 출력 성능을 높이고, 전력 소비를 줄이기 위해 LED 패키지 분야에서 실리콘 기판 연구가 집중되고 있다. 본 연구에서는 공정 비용이 낮고 생산성이 높은 습식 식각을 이용하여 실리콘 기판의 실리콘 관통 비아 식각 공정을 살펴보았다. KOH를 이용한 양면 습식 식각 공정과 습식 식각과 건식 식각을 병행한 두 가지 공정 방법으로 실리콘 관통 비아를 제작하였고, 식각된 실리콘 관통 비아에 Cu 전극과 배선은 전기도금으로 증착하였다. Cu 전극을 연결하는 배선의 전기저항은 약 $5.5{\Omega}$ 정도로 낮게 나타났고, 실리콘 기판의 열 저항은 4 K/W으로 AlN 세라믹 기판과 비슷한 결과를 보였다.

• 정보저장시스템학회논문집
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• 제3권3호
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• pp.118-122
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• 2007

Phase-change wet-etching technology using GeSbTe phase-change films is developed. Selective etching between an amorphous and a crystalline phase can be carried out with an alkaline etchant of NaOH. Etching selectivity is dependent not only on the concentration of the alkaline etchant but also on the film structure. Specifically, metal films for heat control cause marked effects on the etching properties of GeSbTe film. Surviving amorphous pits can be obtained with Al metal layer, however etched amorphous pits are seen with Ag metal layer. An opposite selective etching behavior can be observed between samples with two different metal layers.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2006년도 추계학술대회 논문집 Vol.19
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• pp.19-20
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• 2006

Two methods that can reduce reflectance in solar cells are surface texturing and anti-reflection coating. Wet chemical etching is a typical method that surface texturing of multi-crystalline silicon. Wet chemical etching methods are the acid texturization of saw damage on the surface of multi-crystalline silicon or double-step chemical etching after KOH saw damage removal too. These methods of surface texturing are realized by chemical etching in acid solutions HF-$HNO_3$-$H_2O$. In this solutions we can reduce reflectance spectra by simple process etching of multi-crystalline silicon surface. We have obtained reflectance of 27.19% m 400~1100nm from acidic chemical etching after KOH saw damage removal. This result is about 7% less than just saw damage removal substrate. The surface morphology observed by microscope and scanning electron microscopy (SEM).

• 한국전기전자재료학회논문지
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• 제26권3호
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• pp.194-197
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• 2013

We investigated the effect of etching time on the surface roughness, and electrical and optical properties of ZnO and 2 wt% Al-doped ZnO (AZO) films. The ZnO and AZO films were deposited on glass substrates by RF magnetron sputtering technique. The etching experiment was carried out using a solution of 5% HCl at room temperature. The surface roughness was characterized by Atomic Force Microscopy. The electrical property was measured by Hall measurement system and 4-point probe. The optical property was characterized by UV-vis spectroscopy. After the wet chemical etching, the surface textures were obtained on the surface of the ZnO and AZO films. With the increase of etching time, the surface roughness (RMS) of the films increased and the transmittance of the films was observed to decrease. For the AZO film, a low resistivity of $1.0{\times}10^{-3}\;{\Omega}{\cdot}cm$ was achieved even after the etching.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2008년도 추계학술대회 논문집 Vol.21
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• pp.235-236
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• 2008

Wet etched ZnO:Al films for thin film solar cells were prepared by Facing Target sputtering(FTS) method. Wet etching has been used to produce a rough TCO surface that enables light trapping in the absorber. The ZnO:Al films for thin film solar cells were etched by HCl 0.5%. The etching performance of ZnO:Al films can be tuned by changing etching time. The etched ZnO:Al films compared to a smooth ZnO:Al thin film structure. From the results, the lowest resistivity of deposited films was $5.67\times10^{-4}$ [$\Omega$-cm] and the transmittance of all ZnO:Al thin films were over 80% in visible range.

• 한국세라믹학회지
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• 제42권10호
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• pp.645-648
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• 2005

To fabricate a (100) silicon hard master, we used anisotropic wet etching for the embossing. The etching chemical for the sili­con wafer was a TMAH 25$\%$ solution. The anisotropic wet etching produces a smooth sidewall surface inclined at 54.7°, and the surface roughness of the fabricated master is about 1 nm. After spin coating an organic-inorganic sol-gel hybrid resin on a silicon substrate, we used the fabricated master to form patterns on the silicon substrate. Thus, we successfully obtained patterns via the hot embossing technique with the (100) silicon hard master. Moreover, by using a single hydrophobic surface treatment of the master, we succeeded in achieving uniform surface roughness of the embossed patterns for more than ten embossments.

• Composites Research
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• 제34권6호
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• pp.387-393
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• 2021

본 논문에서는 습식 식각으로 제작된 구리 전극을 가진 다중벽 탄소나노튜브 PDMS 복합재료 변형율 센서의 전기적 특성을 고찰하였다. MWCNT의 질량분율에 따라 MWCNT-PDMS 변형율 센서를 제작한 후, 전극 부착 표면을 습식 식각한 후 은-에폭시 전도성 접착제를 이용하여 구리 박판을 부착하였다. 2-프로브 방법으로 변형율 센서의 전기 전도성을 측정한 결과, 초기 저항은 MWCNT 함량과 식각 시간에 반비례하였지만 30% 변형율에 대한 저항 변화율은 MWCNT 함량과식각 시간에 비례하였다. 100회 반복 하중 시험 후 저항 변형율 감소는 MWCNT 함량이 증가할수록 식각 시간이 짧아질수록 상대적으로 작게 나타났다. 이는 식각에 의해 MWCNT-PDMS 변형율 센서의 초기 저항 감소에 기인한 것으로 판단된다.