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http://dx.doi.org/10.6117/kmeps.2012.19.4.019

Developing Low Cost, High Throughput Si Through Via Etching for LED Substrate  

Koo, Youngmo (Graduate School of NID Fusion Technology, Seoul National University of Science and Technology)
Kim, GuSung (Department of Electrical Engineering, Kangnam University)
Kim, Sarah Eunkyung (Graduate School of NID Fusion Technology, Seoul National University of Science and Technology)
Publication Information
Journal of the Microelectronics and Packaging Society / v.19, no.4, 2012 , pp. 19-23 More about this Journal
Abstract
Silicon substrate for light emitting diodes (LEDs) has been the tendency of LED packaging for improving power consumption and light output. In this study, a low cost and high throughput Si through via fabrication has been demonstrated using a wet etching process. Both a wet etching only process and a combination of wet etching and dry etching process were evaluated. The silicon substrate with Si through via fabricated by KOH wet etching showed a good electrical resistance (${\sim}5.5{\Omega}$) of Cu interconnection and a suitable thermal resistance (4 K/W) compared to AlN ceramic substrate.
Keywords
LED; Si substrate; Si through-via; Wet etching; Thermal resistance;
Citations & Related Records
Times Cited By KSCI : 2  (Citation Analysis)
연도 인용수 순위
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