• Title/Summary/Keyword: wafer-level packaging

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A Study on the Fabrication of the Lateral Accelerometer using SOG(Silicon On Glass) Process (SOG(Silicon On Glass)공정을 이용한 수평형 미소가속도계의 제작에 관한 연구)

  • Choi, Bum-Kyoo;Chang, Tae-Ha;Lee, Chang-Kil;Jung, Kyu-Dong;Kim, Jong-Pal
    • Journal of Sensor Science and Technology
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    • v.13 no.6
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    • pp.430-435
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    • 2004
  • The resolution of the accelerometer, fabricated with MEMS technology is mainly affected by mechanical and electrical noise. To reduce mechanical noise, we have to increase mass of the structure part and quality factor related with the degree of vacuum packaging. On the other hand, to increase mass of the structure part, the thickness of the structure must be increased and ICP-RIE is used to fabricate the high aspect ratio structure. At this time, footing effect make the sensitivity of the accelerometer decreasing. This paper presents a hybrid SOG(Silicon On Glass) Process to fabricate a lateral silicon accelerometer with differential capacitance sensing scheme which has been designed and simulated. Using hybrid SOG Process, we could make it a real to increase the structural thickness and to prevent the footing effect by deposition of metal layer at the bottom of the structure. Moreover, we bonded glass wafer to structure wafer anodically, so we could realize the vacuum packaging at wafer level. Through this way, we could have an idea of controlling of quality factor.

Development of Integrated Optical Pickup for Small Form Factor Optical Disc Drive (Small Form Factor 광 디스크 드라이브용 초소형 집적형 광픽업 개발)

  • Cho, Eun-Hyoung;Sohn, Jin-Seung;Lee, Myung-Bok;Suh, Sung-Dong;Kim, Hae-Sung;Kang, Sung-Mook;Park, No-Cheol;Park, Young-Pil
    • Transactions of the Society of Information Storage Systems
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    • v.2 no.3
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    • pp.163-168
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    • 2006
  • Small form factor optical pickup (SFFOP) corresponding to BD specifications is strongly proposed for the next-generation portable storage device. In order to generate SFFOP, small sized optical pickup has been fabricated. We have developed a small sited optical pickup that is called the integrated optical pickup (IOP). The fabrication method of this system is mainly dependant on the use of the wafer based micro fabrication technology, which has been used in MEMS process such as photolithography, reactive ion etching, wafer bonding, and packaging process. This approach has the merits for mass production and high assembling accuracy. In this study, to generate the small sized optical pickup for high recording capacity, IOP corresponding to BD specifications has been designed and developed, including three main parts, 1) design, fabrication and evaluation of objective lens unit, 2) design and fabrication of IOP and 3) evaluation process of FES and TES.

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Cu/SiO2 CMP Process for Wafer Level Cu Bonding (웨이퍼 레벨 Cu 본딩을 위한 Cu/SiO2 CMP 공정 연구)

  • Lee, Minjae;Kim, Sarah Eunkyung;Kim, Sungdong
    • Journal of the Microelectronics and Packaging Society
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    • v.20 no.2
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    • pp.47-51
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    • 2013
  • Chemical mechanical polishing (CMP) has become one of the key processes in wafer level stacking technology for 3D stacked IC. In this study, two-step CMP process was proposed to polish $Cu/SiO_2$ hybrid bonding surface, that is, Cu CMP was followed by $SiO_2$ CMP to minimize Cu dishing. As a result, Cu dishing was reduced down to $100{\sim}200{\AA}$ after $SiO_2$ CMP and surface roughness was also improved. The bonding interface showed no noticeable dishing or interface line, implying high bonding strength.

The Effect of Insulating Material on WLCSP Reliability with Various Solder Ball Layout (솔더볼 배치에 따른 절연층 재료가 WLCSP 신뢰성에 미치는 영향)

  • Kim, Jong-Hoon;Yang, Seung-Taek;Suh, Min-Suk;Chung, Qwan-Ho;Hong, Joon-Ki;Byun, Kwang-Yoo
    • Journal of the Microelectronics and Packaging Society
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    • v.13 no.4
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    • pp.1-7
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    • 2006
  • A major failure mode for wafer level chip size package (WLCSP) is thermo-mechanical fatigue of solder joints. The mechanical strains and stresses generated by the coefficient of thermal expansion (CTE) mismatch between the die and printed circuit board (PCB) are usually the driving force for fatigue crack initiation and propagation to failure. In a WLCSP process peripheral or central bond pads from the die are redistributed into an area away using an insulating polymer layer and a redistribution metal layer, and the insulating polymer layer affects solder joints reliability by absorption of stresses generated by CTE mismatch. In this study, several insulating polymer materials were applied to WLCSP to investigate the effect of insulating material. It was found that the effect of property of insulating material on WLCSP reliability was altered with a solder ball layout of package.

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Reliability Assessment of MEMS Gyroscope Sensor (MEMS 자이로스코프 센서의 신뢰성 문제)

  • Choi, Min-Seog;Choa, Sung-Hoon;Kim, Jong-Seok;Jeong, Hee-Moon;Song, In-Seob;Cho, Yong-Chul
    • Transactions of the Korean Society of Mechanical Engineers A
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    • v.28 no.9
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    • pp.1297-1305
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    • 2004
  • Reliability of MEMS devices is receiving more attention as they are heading towards commercial production. In particular are the reliability and long-term stability of wafer level vacuum packaged MEMS gyroscope sensors subjected to cyclic mechanical stresses at high frequencies. In this study, we carried out several reliability tests such as environmental storage, fatigue, shock, and vibration, and we investigated the failure mechanisms of the anodically bonded vacuum gyroscope sensors. It was found that successful vacuum packaging could be achieved through reducing outgassing inside the cavity by deposition of titanium as well as by pre-taking process. The current gyroscope structure is found to be safe from fatigue failure for 1000 hours of operation test. The gyroscope sensor survives the drop and vibration tests without any damage, indicating robustness of the sensor. The reliability test results presented in this study demonstrate that MEMS gyroscope sensor is very close to commercialization.

Wafer-Level Package of RF MEMS Switch using Au/Sn Eutectic Bonding and Glass Dry Etch (금/주석 공융점 접합과 유리 기판의 건식 식각을 이용한 고주파 MEMS 스위치의 기판 단위 실장)

  • Kang, Sung-Chan;Jang, Yeon-Su;Kim, Hyeon-Cheol;Chun, Kuk-Jin
    • Journal of Sensor Science and Technology
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    • v.20 no.1
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    • pp.58-63
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    • 2011
  • A low loss radio frequency(RF) micro electro mechanical systems(MEMS) switch driven by a low actuation voltage was designed for the development of a new RF MEMS switch. The RF MEMS switch should be encapsulated. The glass cap and fabricated RF MEMS switch were assembled by the Au/Sn eutectic bonding principle for wafer-level packaging. The through-vias on the glass substrate was made by the glass dry etching and Au electroplating process. The packaged RF MEMS switch had an actuation voltage of 12.5 V, an insertion loss below 0.25 dB, a return loss above 16.6 dB, and an isolation value above 41.4 dB at 6 GHz.

Cure Characteristics of Naphthalene Type Epoxy Resins for SEMC (Sheet Epoxy Molding Compound) for WLP (Wafer Level Package) Application (WLP(Wafer Level Package)적용을 위한 SEMC(Sheet Epoxy Molding Compounds)용 Naphthalene Type Epoxy 수지의 경화특성연구)

  • Kim, Whan Gun
    • Journal of the Semiconductor & Display Technology
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    • v.19 no.1
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    • pp.29-35
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    • 2020
  • The cure characteristics of three kinds of naphthalene type epoxy resins(NET-OH, NET-MA, NET-Epoxy) with a 2-methyl imidazole(2MI) catalyst were investigated for preparing sheet epoxy molding compound(SEMC) for wafer level package(WLP) applications, comparing with diglycidyl ether of bisphenol-A(DGEBA) and 1,6-naphthalenediol diglycidyl ether(NE-16) epoxy resin. The cure kinetics of these systems were analyzed by differential scanning calorimetry with an isothermal approach, and the kinetic parameters of all systems were reported in generalized kinetic equations with diffusion effects. The NET-OH epoxy resin represented an n-th order cure mechanism as like NE-16 and DGEBA epoxy resins, however, the NET-MA and NET-Epoxy resins showed an autocatalytic cure mechanism. The NET-OH and NET-Epoxy resins showed higher cure conversion rates than DGEBA and NE-16 epoxy resins, however, the lowest cure conversion rates can be seen in the NET-MA epoxy resin. Although the NETEpoxy and NET-MA epoxy resins represented higher cure reaction conversions comparing with DGEBA and NE-16 resins, the NET-OH showed the lowest cure reaction conversions. It can be figured out by kinetic parameter analysis that the lowest cure conversion rates of the NET-MA epoxy resin are caused by lower collision frequency factor, and the lowest cure reaction conversions of the NET-OH are due to the earlier network structures formation according to lowest critical cure conversion.

Effects of Package Induced Stress on MEMS Device and Its Improvements (패키징으로 인한 응력이 MEMS 소자에 미치는 영향 분석 및 개선)

  • Choa Sung-Hoon;Cho Yong Chul;Lee Moon Chul
    • Journal of the Korean Society for Precision Engineering
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    • v.22 no.11 s.176
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    • pp.165-172
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    • 2005
  • In MEMS (Micro-Electro-Mechanical System), packaging induced stress or stress induced structure deformation becomes increasing concerns since it directly affects the performance of the device. In the decoupled vibratory MEMS gyroscope, the main factor that determines the yield rate is the frequency difference between the sensing and driving modes. The gyroscope, packaged using the anodic bonding at the wafer level and EMC (epoxy molding compound) molding, has a deformation of MEMS structure caused by thermal expansion mismatch. This effect results in large distribution in the frequency difference, and thereby a lower yield rate. To improve the yield rate we propose a packaged SiOG (Silicon On Glass) process technology. It uses a silicon wafer and two glass wafers to minimize the wafer warpage. Thus the warpage of the wafer is greatly reduced and the frequency difference is more uniformly distributed. In addition. in order to increase robustness of the structure against deformation caused by EMC molding, a 'crab-leg' type spring is replaced with a semi-folded spring. The results show that the frequency shift is greatly reduced after applying the semi-folded spring. Therefore we can achieve a more robust vibratory MEMS gyroscope with a higher yield rate.

Interfacial Reactions of Sn Solder with Variations of Under-Bump-Metallurgy and Reflow Time (Under Bump Metallurgy의 종류와 리플로우 시간에 따른 Sn 솔더 계면반응)

  • Park, Sun-Hee;Oh, Tae-Sung;Englemann, G.
    • Journal of the Microelectronics and Packaging Society
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    • v.14 no.3
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    • pp.43-49
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    • 2007
  • Thickness of intermetallic compounds and consumption rates of under bump metallurgies (UBMs) were investigated in wafer-level solder bumping with variations of UBM materials and reflow times. In the case of Cu UBM, $0.6\;{\mu}m-thick$ intermetallic compound layer was formed before reflow of Sn solder, and the average thickness of the intermetallic compound layer increased to $4\;{\mu}m$ by reflowing at $250^{\circ}C$ for 450 sec. On the contrary, the intermetallic layer had a thickness of $0.2\;{\mu}m$ on Ni UBM before reflow and it grew to $1.7\;{\mu}m$ thickness with reflowing for 450 sec. While the consumption rates of Cu UBM were 100nm/sec fur 15-sec reflow and 4.50-sec for 450-sec reflow, those of Ni UBM decreased to 28.7 nm/sec for 15-sec reflow and 1.82 nm/sec for 450-sec reflow.

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