• Journal of the Korea Society for Simulation
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• v.19 no.4
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• pp.99-109
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• 2010

Existing research about automated wafer transport management strategy for semiconductor manufacturing equipment was mainly focused on dispatching rules which is optimized to specific system layout, process environment or transfer patterns. But these methods can cause problem as like requiring additional rules or changing whole transport management strategy when applied to new type of process or system. In addition, a lack of consideration for interconnectedness of the added rules can cause unexpected deadlock. In this study, in order to improve these problems, propose dynamic priority based transfer job decision making algorithm which is applicable with regardless of system lay out and transfer patterns. Also, extra rule handling part proposed to support special transfer requirement which is available without damage to generality for maintaining a consistent scheduling policies and minimize loss of stability due to expansion and lead to improve productivity at the same time. Simulation environment of Twin-slot type semiconductor equipment was built In order to measure performance and examine validity about proposed wafer scheduling algorithm.

• 한국정보디스플레이학회:학술대회논문집
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• 2005.07b
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• pp.1103-1107
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• 2005

Single-crystal silicon thin films on glass (SOG) and on fused-quartz (SOQ) were prepared using wafer bonding and hydrogen-induced layer transfer. Thinfilm transistors (TFTs) were subsequently fabricated. The high-temperature processed SOQ TFTs show better device performance than the low-temperature processed SOG TFTs. Tensile and compressive strain was measured respectively on SOQ and SOG. Consistent with the tensile strain, enhanced electron effective mobility was measured on the SOQ TFTs.

• 제어로봇시스템학회:학술대회논문집
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• 2002.10a
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• pp.104.6-104
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• 2002

$\textbullet$ Contents 1 Introduction $\textbullet$ Contents 2 300mm OHT System $\textbullet$ Contents 3 function of OHT System $\textbullet$ Contents 4 Control Method $\textbullet$ Contents 5 Conclusion

• Proceedings of the Korean Operations and Management Science Society Conference
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• 2002.05a
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• pp.285-292
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• 2002

A cluster tool for semiconductor manufacturing is an integrated device that consists of several single wafer processing modules and a wafer transport module based on a robot. The distributed module controllers are integrated by an inter-module communication network and coordinated by a centralized controller, called a cluster tool controller (CTC). Since the CTC monitors and coordinates the distributed complex module controllers for advanced process control, complex commuication messaging and services between the CTC and the module controllers are required. A SEMI standard, CTMC(Cluster Tool Module Communication), specifies application-level communication service requirements for inter-module communication. We propose the use of high-level fieldbuses, for instance. PROFIBUS-FMS, for implementing CTMC since the high-level fieldbuses are well suited for complex real-time distributed manufacturing control applications. We present a way of implementing CTMC using PROFIBUS-FMS as the communication enabler. We first propose improvements of a key object of CTMC for material transfer and the part transfer protocol to meet the functional requirements of modem advanced cluster tools. We also discuss mapping objects and services of CTMC to PROFIBUS-FMS communication objects and services. Finally, we explain how to implement the mappings.

• The Journal of the Convergence on Culture Technology
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• v.10 no.4
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• pp.663-668
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• 2024

This paper applies statistical analysis methods in the time domain to the fault diagnosis of wafer transfer robots, and proposes a methodology to discern the critical characteristics of vibration and torque signals. Subsequently, principal component analysis (PCA) is applied to diminish the data's dimensionality, followed by the development of a fault diagnosis algorithm utilizing Euclidean distance and Hotelling's T-square statistics. The algorithm establishes decision boundaries to categorize failure states based on the observed data. Our findings indicate that data classification incorporating velocity parameters enhances diagnostic accuracy. This approach serves to enhance the precision and efficacy of fault diagnosis.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.41 no.10
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• pp.51-56
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• 2004

We propose and fabricate an 1${\times}$2 asymmetric optical switch by TOE using SOI wafer based on silicon which has very large TOE figure and it is a good material for optical devices. SOI wafer consists of 3 layers; upper Si layer for device(waveguide;core, n=3.5), buried oxide layer for insulator(clad, n=1.5) and Si substrate layer. We designed 1${\times}$2 asymmetric y-branched single mode optical waveguide switch by BPM simulation and metal heater by heat transfer simulation. Fabricated switch shows about 3.5 watts of power consumption and over 20dB of crosstalk between output channels.

• Journal of Fisheries and Marine Sciences Education
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• v.19 no.3
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• pp.366-372
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• 2007

This paper presents the fabrication techniques of microcooling fins for microelectronics applications. The various types of cooling fins have been fabricated on the surface of a silicon wafer (4inch-N type) by using wet etching technique. The designed micro fins and micro channels are considered as an effective method for cooling microelectronics devices generating high heat flux. Further we extensively investigate the design processes fabricating micro fins and channels which can cool the heat generated from high density electronics devices.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.08a
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• pp.149-149
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• 2010

The origin of the inhomogeneous distribution of photoluminescence (PL) peak wavelength on a commercial 2" GaN wafer for green light emitting diode has been investigated by wide momentum transfer (Q) range x-ray diffraction (XRD) profile of InGaN/GaN multiple quantum wells. Near the GaN (0004) Bragg peak, wide-Q range XRD (${\Delta}Q$ > $1.4{\AA}-1$) was measured along the growth direction. Wide-Q XRD gives precise and direct information of ultra-thin InGaN quantum well structure. Based on the QW structural information, the variation of PL spectra can be explained by the combined effect of temperature gradient and slightly uneven flow of atomic sources during the QW growth. In narrow variations of indium composition and thickness of QW, an effective indium composition can be a good character to match structural data to PL spectra.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.51 no.6
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• pp.271-277
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• 2002

In this paper, a MEMS silicon package is newly designed, fabricated for HMIC, and characterized for microwave and millimeter-wave device applications. The proposed package is fabricated by using two high resistivity silicon substrates and surface/bulk micromachining technology. It has a good performance characteristic such as -20㏈ of $S_11$/ and -0.3㏈ of $S_21$ up to 20㎓, which is useful in microwave region. It has also better heat transfer characteristics than the commonly used ceramic package. Since the proposed silicon MEMS package is easy to fabricate and wafer level chip scale packaging is also possible, the production cost can be much lower than the ceramic package. Since it will be a promising low-cost package for mobile/wireless applications.

• Proceedings of the KSME Conference
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• 2008.11a
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• pp.1902-1907
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• 2008

The current work presents a design and fabrication technique for a microchannel system to measure the local temperature distribution inside microchannel. This micro channel system fabricated by MEMS technique is integrated with a heater and an array of temperature sensors so that detailed heat transfer phenomena inside micro-scale channel can be studied. Materials widely used in semiconductor process were selected to fabricate a heater and temperature sensors on a silicon wafer. On these heater and sensors a channel wall was fabricated with SU-8. The friction constant and the local Nusselt number distribution measured for the deionized water flow in the microchannel is presented.