• Korean Journal of Materials Research
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• v.15 no.11
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• pp.705-710
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• 2005

NIL (nanoimprint lithography) technique has demonstrated a high potential for wafer size definition of nanometer as well as micrometer size patterns. During the replication process by NIL, the stiction between the stamp and the polymer is one of major problems. This stiction problem is moi·e important in small sized patterns. An antistiction layer prevents this stiction ana insures a clean demolding process. In this paper, we were using a TCP (transfer coupled plasma) equipment and $C_4F_8$ as a precursor to make a Teflon-like antistiction layer. This antistiction layer was deposited on a 6 inch silicon wafer to have nanometer scale thicknesses. The thickness of deposited antistiction layer was measured by ellipsometry. To optimize the process factor such as table height (TH), substrate temperature (ST), working pressure (WP) and plasma power (PP), we were using a design of experimental (DOE) method. The table of full factorial arrays was set by the 4 factors and 2 levels. Using this table, experiments were organized to achieve 2 responses such as deposition rate and non-uniformity. It was investigated that the main effects and interaction effects between parameters. Deposition rate was in proportion to table height, working pressure and plasma power. Non-uniformity was in proportion to substrate temperature and working pressure. Using a response optimization, we were able to get the optimized deposition condition at desired deposition rate and an experimental deposition rate showed similar results.

• Korean Chemical Engineering Research
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• v.46 no.3
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• pp.486-491
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• 2008

This paper describes a model identification method that has been applied to a commercial 12-inch RTP (rapid thermal processing) equipment with an ultimate aim to develop a high-performance advanced controller. Seven thermocouples are attached on the wafer surface and twelve tungsten-halogen lamp groups are used to heat up the wafer. To obtain a MIMO balanced state space model, multiple SIMO (single-input multiple-output) identification with highorder ARX models have been conducted and the resulting models have been combined, transformed and reduced to a MIMO balanced state space model through a balanced truncation technique. The identification experiments were designed to minimize the wafer warpage and an output linearization block has been proposed for compensation of the nonlinearity from the radiation-dominant heat transfer. As a result from the identification at around 600, 700, and $800^{\circ}C$, respectively, it was found that $y=T(K)^2$ and the state dimension of 80-100 are most desirable. With this choice the root-mean-square value of the one-step-ahead temperature prediction error was found to be in the range of 0.125-0.135 K.

• Journal of the Korea Society for Simulation
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• v.27 no.2
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• pp.125-137
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• 2018

Simulations have been used to evaluate the efficiency of logistics or manufacturing systems and predict the outcomes of the systems. New simulation models are needed to evaluate new alternative plants and layouts during the resource design process. Although it is easy to handle minor changes in parameters by modifying a simulation model, it takes considerable time and effort for simulation modelers to alter the layout, which involves changes in many simulation sub-models. Therefore, this study proposes a method to transfer information in AutoCAD layout to the simulation model automatically. This study also defines a standard document as an Excel Form, and suggests a method to transfer information on the basic layouts, processes, resources, and workers to a simulation model automatically. A simulation tool, called Tecnomatix Plant Simulation 9.0, was used for this study. The proposed approach in this study was applied to a semiconductor wafer factory for a case study.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.50 no.4
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• pp.161-168
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• 2001

Organic thin film transitors(TFTs) are of interest for use in broad area electronic applications. For example, in active matrix liquid crystal displays(AMLCDs), organic TFTs would allow the use of inexpensive, light-weight, flexible, and mechanically rugged plastic substrates as an alternative to the glass substrates needed for commonly used hydrogenated amorphous silicon(a-Si:H). Recently pentacene TFTs with carrier field effect, mobility as large as 2 $cm^2V^{-1}s^{-1}$ have been reported for TFTs fabricated on silicon substrates, and it is higher than that of a-Si:H. But these TFTs are fabricated on silicon wafer and $SiO_2$ was used as a gate insulator. $SiO_2$ deposition process requires a high insulator which is polyimide and photo acryl. We investigated trasfer and output characteristics of the thin film transistors having active layer of pentacene. We calculated field effect mobility and on/off ratio from transfer characteristics of pentacene thin film transistor, and measured IR absorption spectrum of polymide used as the gate dielectric layer. It was found that using the photo acryl as a gate insulator, threshold voltage decreased from -12.5 V to -7 V, field effect mobility increased from 0.012 $cm^2V^{-1}s^{-1}$ to 0.039 $cm^2V^{-1}s^{-1}$ , and on/off current ratio increased from $10^5\;to\;10^6$. It seems that TFTs using photo acryl gate insulator is apt to form channel than TFTs using polyimide gate insulator.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.21 no.7
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• pp.831-841
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• 2010

The conventional vertical probe has the thin and long signal path that makes transfer characteristic of probe worse because of the S-shaped structure. So we propose the new vertical probe structure that has branch springs in the S-shaped probe. It makes closed loop when the probe mechanically connects to the electrode on a wafer. We fabricated the proposed vertical probe and measured the transfer characteristic and mechanical properties. Compared to the conventional S-shaped vertical probe, the proposed probe has the overdrive that is 1.2 times larger and the contact force that is 2.5 times larger. And we got the improved transfer characteristic by 1.4 dB in $0{\sim}10$ GHz. Also we developed the simulation model of the probe card by using full-wave simulator and the simulation result is correlated with measurement one. As a result of this simulation model, the cantilever probe and PCB have the worst transfer characteristic in the probe card.

• Transactions of the Korean Society of Mechanical Engineers B
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• v.30 no.2 s.245
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• pp.153-160
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• 2006

A technique for measuring surface temperature field in micro scale is newly proposed, which uses temperature-sensitive fluorescent (TSF) dye coated on the surface and is easily implemented with a fluorescence microscope and a CCD camera. The TSF dye is chosen among mixtures of various chemical compositions including rhodamine B as the fluorescent dye to be most sensitive to temperature change. In order to examine the effectiveness of this temperature measurement technique, numerical analysis and experiment on transient conduction heat transfer for two different substrate materials, i. e., silicon and glass, are performed. In the experiment, to accurately measure the temperature with high resolution temperature calibration curves were obtained with very fine spatial units. The experimental results agree qualitatively well with the numerical data in the silicon and glass substrate cases so that the present temperature measurement method proves to be quite reliable. In addition, it is noteworthy that the glass substrate is more appropriate to be used as thermally-insulating locally-heating heater in micro thermal devices. This fact is identified in the temperature measuring experiment on the locally-heating heaters made on the wafer of silicon and glass substrates. Accordingly, this technique is capable of accurate and non-intrusive high-resolution measurement of temperature field in microscale.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.06a
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• pp.13-13
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• 2009

We have investigated the fabrication and properties of bendable PZT film formed on plastic substrates for the application in flexible memory. These devices used the PZT active layer formed on $SiO_2/Si$ wafer by sol-gel method with optimized device layouts and Pt electrodes. After etching Pt/PZT/Pt layers, patterned by photolithography process. these layers were transferred on PET plastic substrate using elastomeric stamp. The level of performance that can be achieved approaches that of traditional PZT. devices on rigid bulk wafers.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.07b
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• pp.811-813
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• 2003

We investigated the electrical properties of self-assembled (4,4'-Di(ethynylphenyl)-2'-nitro-1-thioacetylbenzene), which has been well known as a conducting molecule having possible application to molecular level negative differential resistance(NDR)[1]. Generally, the phenomenon of NDR can be characterized by the decreasing current with the increasing voltage[2]. To deposit the SAM layer onto gold electrode, we transfer the prefabricated nanopores into a 1mM self-assembly molecules in THF solution. Au(111) substrates were prepared by ion beam sputtering method of gold onto the silicon wafer. As a result, we measured the voltage-current properties and confirmed the negative differential resistance properties of self-assembled organic thin film and measured, using Scanning Tunneling Microscopy(STM).

• JSTS:Journal of Semiconductor Technology and Science
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• v.6 no.4
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• pp.293-298
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• 2006

Thermopiezoelectric method, using poly silicon heater and a piezoelectric sensor, was proposed for writing and reading in a probe based data storage system. Resistively heated tip writes data bits while scanning over a polymer media and piezoelectric sensor reads data bits from the self-generated charges induced by the deflection of the cantilever. 34${\times}$34 array of thermopiezoelectric nitride cantilevers were fabricated by a single step wafer level transfer method. We analyzed the noise level of the charge amplifier and measured the noise signal. With the sensor and the charge amplifier 20mn of deflection could be detected at a frequency of 10KHz. Reading signal was obtained from the cantilever array and the sensitivity was calculated.

• Proceedings of the KIPE Conference
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• 2006.06a
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• pp.470-474
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• 2006

This dissertation discuses about a ferrite core plasma source using low operating frequency without sputtering problem by the stored electric field. Compared with the conventional RF power system with 13.56MHz switching frequency, the proposed plasma power system is only separated at 400kHz, so that it makes possible to use of low cost switching elements, PWM control and soft switching. Moreover, it could improve the coupling efficiency for plasma and antenna by using the ferrite core in order to transfer the energy of the load This dissertation tried to analyze new plasma generation method for the plasma generation system by modeling the plasma load and grafting the concept of impedance matching in order to interpret it with the formula This dissertation verified the ferrite core inductive coupling plasma source authorized for 400kHz of low frequency power by applying to the semi-conductor ash process thru the measurement of ash capacity and uniformed plasma distribution on the actual wafer.