• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.11 no.6
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• pp.428-435
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• 1998

SOI-like-bulk CMOS device is proposed, which having the advantages of SOI(Silicon On Insulator) and protects short channel effects efficiently with adding partial epitaxial process at standard CMOS process. SOI-like-bulk NMOS and PMOS with 0.25${\mu}{\textrm}{m}$ gate length have designed and optimized through analyzing the characteristics of these devices and applying again to the design of processes. The threshold voltages of the designed NMOS and PMOS are 0.3[V], -0.35[V] respectively and those have shown the stable characteristics under 1.5[V] gate and drain voltages. The leakage current of typical bulk-CMOS increase with shortening the channel length, but the proposed structures on this a study reduce the leakage current and improve the subthreshold characteristics at the same time. In addition, subthreshold swing value, S is 70.91[mV/decade] in SOI-like-bulk NMOS and 63.37[mV/ decade] SOI-like-bulk PMOS. And the characteristics of SOI-like-bulk CMOS are better than those of standard bulk CMOS. To validate the circuit application, CMOS inverter circuit has designed and transient & DC transfer characteristics are analyzed with mixed mode simulation.

• Proceedings of the KIEE Conference
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• 1996.07c
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• pp.1895-1897
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• 1996

Lightning impulse voltage is essential to evaluate the insulation performance of electric power apparatus. Recently international standard (IEC-60) on high voltage measurement techniques are being revised. In the draft of this standard, a new calibration method is introduced and the accuracy of most industrial measuring systems is maintained by means of comparison test against the reference measuring systems. Comparison tests of dividers for chopped lightning impulse measurement were rallied out by KERI. The 700kV shielded resisitive divider with and without compensation element were done comparison test with 300kV PTB divider which have the similar charateristics as that were circulated among the laboratories. This paper reports on the calculation results of response charateristics obtained by EMTP and the comparison test results with chopped lightning impulse voltages from 150kV to 250kV. It is demonstrated that KERI are capable of realizing the idea in the revision of the IEC standand, that is, to establish traceability.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2008.10a
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• pp.604-607
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• 2008

In this study, p-channel silicon-oxide-nitride-oxide-silicon (SONOS) transistors are fabricated and characterized as an unit cell for NAND flash memory. The SONOS transistors are fabricated by $0.13{\mu}m$ low power standard logic process technology. The thicknesses of gate insulators are $20{\AA}$ for the tunnel oxide, $14{\AA}$ for the nitride layer, and $49{\AA}$ for the blocking oxide. The fabricated SONGS transistors show low programming voltage, fast erase speed, and relatively good retention and endurance.

• Journal of Power Electronics
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• v.12 no.6
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• pp.895-903
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• 2012

This paper presents a fast switching direct torque control (FS-DTC) using only a single DC-link current sensor. In FS-DTC, six new active voltage complex space vectors (CSVs) are synthesized by the conventional active voltage space vectors (SVs). The corresponding sectors are rotated in the anticlockwise direction by 30 degrees. A selection table is defined to select the CSVs. Based on the "Different Phase Mode", the output sequence of the selected CSV is optimized. Accordingly, a reconstruction method is proposed to acquire the phase currents. The core of the FS-DTC is that all of the three phase currents can be reliably reconstructed during every two sampling periods, which is the result of the fast switching between different phases. The errors between the reconstructed and actual currents are strictly limited in one sampling period. The FS-DTC has the advantages of the standard DTC scheme such as simple structure, quick torque response and robustness. As can be seen in the analysis, the FS-DTC can be thought of as an equivalent standard DTC scheme with 86.6% of the maximum speed, 173.2% of the torque ripple, and 115% of the response time of the torque. Based on a dSPACE DS1103 controller, the FS-DTC is implemented in an induction machine drive system. The results verify the effectiveness of the FS-DTC.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.06a
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• pp.227-228
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• 2007

Although many studies have been carried out about binary gas mixtures with $SF_6$, few studies were presented about breakdown characteristics of $SF_6/CF_4$ mixtures. At present study the breakdown characteristics of SFJCF4 mixtures in uniform field was performed. The experiments were carried out under AC and standard lightning impulse (SLI) voltages. The sphere-sphere electrode whose gap distance was 1 mm was used in a test chamber. $SF_6/CF_4$ mixtures contained from 0 to 100% $SF_6$ and the experimental gas pressure ranged from 0.1 to 0.4 MPa. The results show that addition of $SF_6$ to $CF_4$ increase AC and SLI breakdown voltages. Under AC voltages the breakdown voltages of each mixture were linearly increased according to the quantity of $SF_6$. However under SLI voltages the breakdown voltages of each mixture were similar.

• Journal of Sensor Science and Technology
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• v.30 no.4
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• pp.236-242
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• 2021

In this paper, we report the fabrication of the tip-on-gate of a field-effect-transistor (ToGoFET) probe using a standard complementary metal-oxide-semiconductor (CMOS) process and the performance evaluation of the fabricated probe. After the CMOS process, I-V characteristic measurement was performed on the reference MOSFET. We confirmed that the ToGoFET probe could be operated at a gate voltage of 0 V due to channel ion implantation. The transconductance at the operating point (Vg = 0 V, Vd = 2 V) was 360 ㎂/V. After the fabrication process was completed, calibration was performed using a pure metal sample. For sensitivity calibration, the relationship between the input voltage of the sample and the output current of the probe was determined and the result was consistent with the measurement result of the reference MOSFET. An oxide sample measurement was performed as an example of an application of the new ToGoFET probe. According to the measurement, the ToGoFET probe could spatially resolve a hundred nanometers with a height of a few nanometers in both the topographic image and the ToGoFET image.

• 한국신재생에너지학회:학술대회논문집
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• 2010.11a
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• pp.82.1-82.1
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• 2010

Recently, Molten carbonate fuel cells(MCFCs) have been developing to get a good durability and economic feasibility for commercialization. To achieve these objectives, the cost of nickel based electrodes should be reduced. Regular anode thickness used in MCFCs is normally 0.7mm. Thus, in our study, the purpose was to reduce anode thickness up to 0.3 mm keeping MCFC performance on standard levels. In-situ sintering has been used, with 2 different fabrication methods (method A and B) and 2 different supports (support 1 and 2). Voltage losses at different temperature (600,620,640,$650^{\circ}C$) and after 1000 hours showed the higher performance that can be obtained using method B and support 2. After single cell test, an open-circuit voltage(OCV) of 1.075 V and a closed-circuit voltage(CCV) of 0.829V were obtained, at current density of $150mV/cm^2$. Also the voltage loss ratio at different cell temperature was lower in the case of method B and support 2. According to these results, the cost of anode fabrication can be reduced in the future, contributing for the economical feasibility of MCFCs.

• Proceedings of the KIEE Conference
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• 2011.07a
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• pp.1538-1539
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• 2011

In this study, we have investigated the dielectric breakdown by measuring AC (60Hz) breakdown strength of the fluids in accordance with IEC 156 standard and have compared the results with references. It was found that the dielectric breakdown voltage of pure transformer oil is around 12 [kV] with the gap distance of 1.5mm between electrodes. In case of our transformer oil based magnetic fluids with 0.1% < ${\Phi}$(volume concentration of magnetic particles) <0.6%, the dielectric breakdown voltage shows above 30 [kV], which is 2.5 times higher than that of pure transformer oil. It can be explained by the changed ionization process by adding nanoparticles in pure transformer oil, which is due to trapped fast electrons and slow negative nanoparticles. Moreover, in case of the fluid with applied magnetic field, the dielectric breakdown voltage increases above 40 [kV], which is 3.3 times higher than that of pure transformer oil.

• Journal of Satellite, Information and Communications
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• v.11 no.4
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• pp.27-32
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• 2016

A conventional double diffused drain n-type MOSFET (DDD_NMOS) device shows SCR behaviors with very low snapback holding voltage and latch-up problem during normal operation. However, a modified DDD_NMOS-based silicon controlled rectifier (DDD_NSCR_CPS) device with a counter pocket source (CPS) structure is proven to increase the snapback holding voltage and on-resistance compare to standard DDD_NSCR device, realizing an excellent electrostatic discharge protection performance and the stable latch-up immunity.

• Journal of Satellite, Information and Communications
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• v.11 no.4
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• pp.21-26
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• 2016

The ESD(electrostatic discharge) protection performance of PPS(PMOS pass structure) embedded N-type silicon controlled rectifier(NSCR_PPS) device with different implant of channel blocking region was discussed for high voltage I/O applications. A conventional NSCR standard device shows low on-resistance, low snapback holding voltage and low thermal breakdown voltage, which may cause latch-up problem during normal operation. However, our proposed NSCR_PPS devices with modified channel blocking structure demonstrate the improved ESD protection performance as a function of channel implant variation. Therefore, the channel blocking implant was a important parameter. Since the modified device with CPS_PDr+HNF structure satisfied the design window, we confirmed the applicable possibility as a ESD protection device for high voltage operating microchips.