Proceedings of the Korean Institute of Information and Commucation Sciences Conference (한국정보통신학회:학술대회논문집)
- 2008.10a
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- Pages.604-607
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- 2008
The Fabrication and Characteristics of p-channel SONOS Charge-Trap Flash Memory
p채널 SONOS 전하트랩 플래시메모리의 제작 및 특성
- Kim, Byung-Cheul (Dept. of Electronic Engineering, Jinju National University) ;
- Kim, Joo-Yeon (School of Electrical Engineering, Ulsan College)
- Published : 2008.10.31
Abstract
In this study, p-channel silicon-oxide-nitride-oxide-silicon (SONOS) transistors are fabricated and characterized as an unit cell for NAND flash memory. The SONOS transistors are fabricated by
본 연구에서는 NAND 플래시메모리를 위한 기본 셀로서 p채널 SONOS (silicon-oxide-nitride-oxide-silicon) 트랜지스터를 제작하고 이것의 메모리특성을 조사하였다. SONOS 트랜지스터의 제작은