• The Transactions of The Korean Institute of Electrical Engineers
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• v.63 no.11
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• pp.1533-1537
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• 2014

$WO_3/Ag/WO_3$ multilayer was researched by using RF magnetron sputtering with transparent electrode. Process gas flow ratio with $Ar/O_2$ were selected the optimum conditions at 70sccm/2sccm and $WO_3$ thin film at its conditions was appeared at transmittance about 80% in the visible light region to the average. $WO_3/Ag/WO_3$ multilayer thin films were fabricated from the same process condition which was the same gas flow ratio of Ar and $O_2$ $WO_3/Ag/WO_3$ thin films were appeared transmittance about 93% and sheet resistance about $6.41{\Omega}/{\square}$. From the SEM images, each thin films were appeared when $WO_3$ is 40nm and $O_2$ is 10nm.

• 한국신재생에너지학회:학술대회논문집
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• 2009.11a
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• pp.349-349
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• 2009

High quality ZnO:Al films were prepared on glass substrates by in-line RF magnetron sputtering and their surface morphologies were modified by wet-etching process in dilute acid solution to improve optical properties for application to silicon thin film solar cells as front electrode. The as-deposited films show a strong preferred orientation in [001] direction under our experimental conditions. A low resistivity below $5{\times}10^{-4}{\Omega}{\cdot}cm$ and high optical transmittance above 80% in a visible range are achieved in the films deposited at optimized conditions. After wet-etching, the surface morphologies of the films are changed dramatically depending on the deposition conditions, especially working pressure. The optical properties such as total/diffuse transmittance, haze and angular resolved distribution of light are varied significantly with the surface morphology feature, whereas the electrical properties are seldom changed. The cell performances of silicon thin film solar cells fabricated on the textured films are also evaluated in detail with comparison of commercial $SnO_2$:F films.

• Journal of Surface Science and Engineering
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• v.40 no.3
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• pp.107-112
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• 2007

Aluminum doped zinc oxide (AZO) films were deposited on non-alkali glass substrate by DC magnetron sputtering with 3 types of AZO targets (doped with 1.0 wt%, 2.0 wt%, 3.0 wt% $Al_2O_3$). Electrical, optical properties and microstructure of AZO films have been investigated by Hall effect measurements, UV/VIS/NIR spectrophotometer, and XRD, respectively. Crystallinity of AZO films increased with increasing substrate temperature ($T_s$) and doping ratio of Al. Resistivity and optical transmittance in visible light were $8.8{\times}10^{-4}{\Omega}cm$ and above 85%, respectively, for the AZO film deposited using AZO target (doped with 3.0 wt% $Al_2O_3$) at $T_s$ of $300^{\circ}C$. On the other hand, transmittance of AZO films in near-infrared region decreased with increasing $T_s$ and doping ratio of Al, which could be attributed to the increase of carrier density.

• Proceedings of the KIEE Conference
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• 2006.07b
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• pp.1155-1156
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• 2006

In this paper, we analyzed the effect of EVA Sheet Gel Content depending on curing condition for photovoltaic module. Gel Content was measured by manufacturing Glass/EVA Sheet/Back Sheet scheme at several curing temperature and curing time. And the surface analysis of EVA Sheet depending on process condition could be observed using SEM(Scanning Electron Microscope). Through this experiment, we could confirm that there are differences on Gel Content of EVA Sheet and surface configuration depending on curing temperature and curing time. To find out the optical characteristic dependency on curing condition, Class/EVA Sheet/Glass scheme was fabricated. The optical transmittance of EVA Sheet at visible wavelength was enhanced 5% when compared to Glass/Glass scheme. And the transmittance of $130^{\circ}C$/4min, $110^{\circ}C$/4min, $160^{\circ}C$/6min process condition was higher at ultraviolet wavelength range. These curing conditions could be regarded as the best process for suppression the discoloration speed of EVA Sheet under UV light.

• Proceedings of the KIEE Conference
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• 1997.07d
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• pp.1352-1354
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• 1997

Transparent conductive thin films have found many application in many active and passive electronic and opto-electronic devices as like flat Panel display electrode and window heat mirror, etc. Low resistivity and high transmittance of this films can be obtained by controlling deposition parameters, which are oxygen partial Pressure, substrate temperature and dopant concentration. In this study, We prepared non-stoichiometric and Sb-doped thin films of tin dioxide by reactive DC magnetron sputtering technology. The lowest resistivity of about $3.0{\times}10^{-3}\;{\Omega}cm$ and 80% transmittance in the visible light region have heed obtained at optimal deposition condition.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.28 no.12
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• pp.821-825
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• 2015

Anti-reflective (AR) thin film was fabricated on a glass substrate by sol-gel method. The coating solution was synthesized with TEOS (tetraethlyorthosilicate) and poly ethylene glycol (PEG, 4.0 wt%). As the withdrawal speed of coating was changed from 0.1 mm/sec to 0.3 mm/sec, the thickness and refractive index of prepared thin films were changed. The reflectance and transmittance of coating glass fabricated by the withdrawal speed of 0.1 mm/sec were 0.62% and 95.0% in visible light range. The refractive index and thickness of single layer thin film were n= 1.29 and ca. 99.0 nm.

• Journal of the Semiconductor & Display Technology
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• v.14 no.3
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• pp.33-36
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• 2015

It has increased several decades in the field of Indium Tin Oxide (ITO) transparent thin film, However, a major problem with this ITO thin film application is high cost compared with other transparent thin film materials[1]. So far, in order to overcome this disadvantage, we show that a transparent ITO/Ag/i-ZnO multilayer thin film electrode would be more cost-effective and it has not only highly transparent but also conductive properties. The aim of this research has therefore been to try and establish how ITO/Ag/i-ZnO multilayer thin film would be more effective than ITO thin film. Herein, we report the properties of ITO/Ag/i-ZnO multilayer thin film by using optical spectroscopic method and measuring sheet resistance. At a certain total thickness of thin film, sheet resistance of ITO/Ag/i-ZnO multilayer was drastically decreased than ITO layer approximately $40{\Omega}/{\Box}$ at same visible light transmittance. (minimal point $5.2{\Omega}/{\Box}$). Tendency, which shows lowly sheet resistive in a certain transmittance, has been observed, hence, it should be suitable for transparent electrode device.

• Journal of the Korean Ceramic Society
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• v.52 no.2
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• pp.123-127
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• 2015

Soda-lime silicate (SLS) glass was strengthened by ion exchange for application of thin and lightweight bulletproof windows. The optimal conditions for ion exchanged SLS glass (thickness of 3 and 10 mm) at $480^{\circ}C$ were 10 and 17 min, respectively. The Vickers hardness values of the strengthened SLS glass samples with thicknesses of 3 and 10 mm were $5.9{\pm}0.22$ and $6.7{\pm}0.17GPa$, respectively, which values were about 22% higher than those of parent SLS glass. By laminating a multilayer defense film and polycarbonate sheet with ion exchanged SLS glass, we were able to make a thin and lightweight bulletproof window (24.25 mm, 4.57 kg, $50.06kg/m^2$, $V_{50}$ 901.8 m/s). As a result, the thickness of the bulletproof window was decreased by about 39% from 40 to 24.25 mm. The light transmittance in the visible range satisfied the standard (over 76%) for bulletproof windows.

• Journal of the Korean Society for Heat Treatment
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• v.30 no.1
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• pp.1-5
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• 2017

A 100 nm thick $SnO_2$ thin films were prepared by radio frequency magnetron sputtering on glass substrates and then annealed in nitrogen atmosphere for 30 minutes at 100, 200, and $300^{\circ}C$, respectively. While the visible light transmittance and electrical resistivity of as deposited $SnO_2$ films were 81.8% and $1.5{\times}10^{-2}{\Omega}cm$, respectively, the films annealed at $200^{\circ}C$ show the increased optical transmittance of 82.8% and the electrical resistivity also decreased as low as $4.3{\times}10^{-3}{\Omega}cm$. From the observed results, it is concluded that post-deposition annealing in nitrogen atmosphere at $200^{\circ}C$ is an attractive condition to optimize the optical and electrical properties of $SnO_2$ thin films for the various display device applications.

• Journal of Ceramic Processing Research
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• v.19 no.5
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• pp.383-387
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• 2018

Highly transparent $Y_2O_3$ ceramics were produced using spark plasma sintering (SPS) at $1600^{\circ}C$ and 30 MPa for 5 min. When the SPS process was applied with various amounts of $La_2O_3$ as dopant. The specimen doped with 3 mol% $La_2O_3$ showed the highest density, and rapid particle growth and pore growth occurred, exhibiting that the relative density and average grain size are 99.2% and $17.2{\mu}m$, respectively. The specimen showed excellent transmittance of 79.44% in the visible light region (600 nm), resulting that $La_2O_3$ would be a useful dopant for improving the transmittance and mechanical properties of transparent $Y_2O_3$ ceramics produced with SPS.