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http://dx.doi.org/10.12656/jksht.2017.30.1.1

Effect of Post-deposition Annealing in a Nitrogen Atmosphere on the Properties of SnO2 Thin Films  

Song, Young-Hwan (School of Materials Science and Engineering, University of Ulsan)
Eom, Tae-Young (School of Materials Science and Engineering, University of Ulsan)
Heo, Sung-Bo (Korea Institute of Industrial Technologies)
Kim, Jun-Ho (Korea Institute of Industrial Technologies)
Kim, Daeil (School of Materials Science and Engineering, University of Ulsan)
Publication Information
Journal of the Korean Society for Heat Treatment / v.30, no.1, 2017 , pp. 1-5 More about this Journal
Abstract
A 100 nm thick $SnO_2$ thin films were prepared by radio frequency magnetron sputtering on glass substrates and then annealed in nitrogen atmosphere for 30 minutes at 100, 200, and $300^{\circ}C$, respectively. While the visible light transmittance and electrical resistivity of as deposited $SnO_2$ films were 81.8% and $1.5{\times}10^{-2}{\Omega}cm$, respectively, the films annealed at $200^{\circ}C$ show the increased optical transmittance of 82.8% and the electrical resistivity also decreased as low as $4.3{\times}10^{-3}{\Omega}cm$. From the observed results, it is concluded that post-deposition annealing in nitrogen atmosphere at $200^{\circ}C$ is an attractive condition to optimize the optical and electrical properties of $SnO_2$ thin films for the various display device applications.
Keywords
$SnO_2$; RF magnetron sputtering; Nitrogen atmosphere; annealing; Figure of merit;
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Times Cited By KSCI : 2  (Citation Analysis)
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