Preparation of $SnO_2$ Thin Film Using Reactive DC Magnetron Sputtering

반응성 DC 마그네트론 스퍼터법에 의한 $SnO_2$ 박막재조 및 특성

  • 정혜원 (인하대학교 전자.전기.컴퓨터공학부) ;
  • 이천 (인하대학교 전자.전기.컴퓨터공학부) ;
  • 신재혁 (국립기술품질원 무기화학과) ;
  • 송국현 (국립기술품질원 무기화학과) ;
  • 신성호 (국립기술품질원 무기화학과) ;
  • 박정일 (국립기술품질원 무기화학과) ;
  • 박광자 (국립기술품질원 무기화학과)
  • Published : 1997.07.21

Abstract

Transparent conductive thin films have found many application in many active and passive electronic and opto-electronic devices as like flat Panel display electrode and window heat mirror, etc. Low resistivity and high transmittance of this films can be obtained by controlling deposition parameters, which are oxygen partial Pressure, substrate temperature and dopant concentration. In this study, We prepared non-stoichiometric and Sb-doped thin films of tin dioxide by reactive DC magnetron sputtering technology. The lowest resistivity of about $3.0{\times}10^{-3}\;{\Omega}cm$ and 80% transmittance in the visible light region have heed obtained at optimal deposition condition.

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