• Journal of the Institute of Electronics Engineers of Korea SD
• /
• v.39 no.10
• /
• pp.9-15
• /
• 2002

We propose a new transit time device to extend the operating frequency to submillimeter-wave(extreme infrared) ranges by utilizing velocity overshoot effects in the drift region. We name it a velocity overshoot transit time (OVTT) diode. This device adopts fast heterostructure tunneling as injection mechanism and a short drift region to optimize the velocity overshoot effects. To enhance dc-to-RF conversion efficiencym the drift region is designed with a bandgap grading method. Simulation results demonstrate that a VOTT diode can be operated at THz ranges.

• JSTS:Journal of Semiconductor Technology and Science
• /
• v.8 no.2
• /
• pp.115-120
• /
• 2008

Carrier velocity in the MOSFET channel is the main driving force for improved transistor performance with scaling. We report measurements of the drift velocity of electrons and holes in silicon inversion layers. A technique for extracting effective carrier velocity which is a more accurate extraction method based on the actual inversion charge measurement is used. This method gives more accurate result over the whole range of $V_{ds}$, because it does not assume a linear approximation to obtain the inversion charge and it does not limit the range of applicable $V_{ds}$. For a very short channel length device, the electron velocity overshoot is observed at room temperature in 37 nm MOSFETs while no hole velocity overshoot is observed down to 36 nm. The electron velocity of short channel device was found to be strongly dependent on the longitudinal field.

• Electrical & Electronic Materials
• /
• v.10 no.3
• /
• pp.268-273
• /
• 1997

In this paper the transient electron transport in GaAs bulk is simulated by using ensemble Monte Carlo method. To analyze the transient electron transport the 10000 electrons in the .GAMMA. valley are simulated simultaneously for 10 picoseconds. The electric field-velocity relation is obtained. The high impurity density reduces the negative differential resistance effect. The result of transient average velocity shows the electron velocity in the transient state is faster than that in the steady state. This transient velocity overshoot is caused by the intervalley scattering mechanism. And we confirmed the fact that the energy relaxation time is longer than the momentum relaxation time.

• Journal of the Institute of Electronics and Information Engineers
• /
• v.50 no.9
• /
• pp.55-59
• /
• 2013

A new method using RF Ids determined from measured S-parameters is proposed to extract the gate-voltage dependent effective carrier velocity of bulk MOSFETs in the saturation region without additional dc Ids measurement data suffering parasitic resistance effect that becomes larger with continuous down-scaling to sub-$0.1{\mu}m$. This method also allows us to extract the carrier velocity in the saturation region without the difficult extraction of bias-dependent parasitic gate-source capacitance and effective channel length. Using the RF technique, the electron velocity overshoot exceeding the bulk saturation velocity is observed in bulk N-MOSFETs with a polysilicon gate length of $0.065{\mu}m$.

• Transactions of the Korean Society of Mechanical Engineers
• /
• v.10 no.6
• /
• pp.861-869
• /
• 1986

A numerical study has been conducted on the development of the velocity and temperature fields in a laminar flow through an eccentric annular duct. A bipolar coordinates system is adopted, and a numerical program is developed to analyze 3-dimensional parabolic flow problems. In the analysis of the velocity field, the entrance length has been defined as the distance where the axial pressure gradient is greater than that of the developed velocity field by 5%. The dimensionless hydrodynamic entry length increases with increasing eccentricity. In the transverse flow fields, the reverse flow region along the wall due to the developing axial velocity near the entrance of the duct is found. In the analysis of the temperature field, the thermal entry length has been defined as the axial distance where the mean fluid temperature is 5% less than that of the developed temperature field. The dimensionless thermal entry length increases as eccentricity or Prandtl number increases. The overshoot of the mean Nusselt number over the developed value at the zero-temperature wall is encountered, and the rate of the overshoot increases with the increase of the eccentricity and Prandtl number.

• Journal of Advanced Marine Engineering and Technology
• /
• v.30 no.1
• /
• pp.140-149
• /
• 2006

Characteristics of a laminar diffusion flame placed near wall in microgravity have been numerically analyzed in a two-dimension. The fuel for the flame is $C_2H_4$. The flame is initiated by imposing a high temperature ignition source. The flow field, temperature field, and flame shape in microgravity diffusion flame are detailed. Especially, effects of surrounding air velocity and fuel injection velocity on the microgravity diffusion flame have been discussed accounting for standoff distance. And, the effect of curvature rate has been also studied. The results showed that velocities in a diffusion flame were overshoot because of volumetric expansion and distribution of temperature showed regularity by free-buoyancy This means that the diffusion flame in microgravity is very stable, while the flame in normal gravity is not regular and unstable due to buoyancy. Standoff distance decreases with increase in surrounding air velocity and with decrease in fuel injection velocity. With increasing curvature rate, the position of reaction rate moves away the wall.

• Journal of the Korean Society for Precision Engineering
• /
• v.20 no.12
• /
• pp.89-95
• /
• 2003

A PID controller integrated with a velocity feedback is designed for fluid power elevator model system in this study. In this case, for outside disturbance load a hydraulic cylinder and a pressure control valve are used. In this method overshoot is reduced and settling time becomes also shorter than the values achieved from the PID controller system only In conclusion a PID controller integrated with a velocity feedback is considered a suitable control method for fluid power elevator system.

• 제어로봇시스템학회:학술대회논문집
• /
• 1997.10a
• /
• pp.349-352
• /
• 1997

In this paper, we propose a new longitudinal controller of automated vehicles. The controller is designed based on a sliding control method, which is known to be robust to disturbances and modelling errors. Contrary to currently available sliding controller, a switching controller gain method is suggested. It is shown throughout simulations that the proposed controller reduces the amount of overshoot, which may derive smoother velocity tracking in a platoon.

• Proceedings of the Korean Society of Precision Engineering Conference
• /
• 1991.04a
• /
• pp.293-301
• /
• 1991

A fuzzy regulator for the plant which is composed of CD motor and heavy load is investigated. To have good load regulation and set-point tracking performance, a velocity formed fuzzy control plus linear filter algorithm is proposed. Also a meaning reduction methodfor large inpur whichhas nocontrol rule is presented. Lastly, the performancef of linear PID regulator and fuzzycontroller is compared in terms of response time, overshoot, settling time and control power.

• Journal of the Korean Institute of Telematics and Electronics A
• /
• v.30A no.11
• /
• pp.122-131
• /
• 1993

In this paper, we have developed a submicron Si MOSFET simulator, which is physically based on the hydrodynamic energy transport mode. The simulator was used to investigate the nonstationary transport effects and the transient phenomena in submicron Si MOSFET's. It is found that the velocity overshoot and the carrier heating are dominant transport mechanism near the drain end of the channel and the transient phenomena is more retained in a long channel MOSFET.