Journal of the Institute of Electronics Engineers of Korea SD (대한전자공학회논문지SD)

The Institute of Electronics and Information Engineers (대한전자공학회)
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Transit Time Diodes Using Velocity Overshoot Effects for Submillimeter-Wave Frequency Range Operation

속도 오버슈트 효과를 이용하여 서브밀리미터파 주파수 영역에서 동작하는 주행 시간 다이오드

  • 송인채 (숭실대학교 정보통신전자공학부)
  • Published : 2002.10.01
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Abstract

We propose a new transit time device to extend the operating frequency to submillimeter-wave(extreme infrared) ranges by utilizing velocity overshoot effects in the drift region. We name it a velocity overshoot transit time (OVTT) diode. This device adopts fast heterostructure tunneling as injection mechanism and a short drift region to optimize the velocity overshoot effects. To enhance dc-to-RF conversion efficiencym the drift region is designed with a bandgap grading method. Simulation results demonstrate that a VOTT diode can be operated at THz ranges.

드리프트 영역에서의 속도 오버슈트 효과를 이용하여 서브밀리미터파 주파수 영역에서 동작하는 새로운 주행 시간 소자를 제안한다. 이 소자를 속도 오버슈트 주행 시간(VOTT) 다이오드라 명명한다. 이 소자는 캐리어 주입 메커니즘으로 빠르게 이루어지는 이종구조 터널링을 이용하며, 속도 오버슈트 효과를 최적화하기 위하여 짧은 드리프트 영역을 갖는다. 변환효율을 증대시키기 위하여 에너지 대역 간극을 경사시키는 방법으로 드리프트영역을 설계한다. 모의실험결과에 따르면 이 소자는 THz 영역에서 동작하리라 기대된다.

Keywords

References

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