• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2006년도 하계학술대회 논문집 Vol.7
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• pp.116-117
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• 2006

I-D ZnO nanostructures were fabricated by thermal evaporation method on Si(100), GaN and $Al_2O_3$ substrates without a catalyst at the reaction temperature of $700^{\circ}C$. Only pure Zn powder was used as a source material and Ar was used as a carrier gas. The shape and growth direction of synthesized ZnO nanostructures is determined by the crystal structure and the lattice mismatch between ZnO and substrates. The ZnO nanostructure on Si substrate were inclined regardless of their substrate orientation. The origin of ZnO/Si interface is highly lattice-mismatched and the surface of the Si substrate inevitably has the $SiO_2$ layer. The ZnO nanostructure on the $Al_2O_3$ substrate was synthesized into the rod shape and grown into particular direction. For the GaN substrate, however, ZnO nanostructure with the honeycomb-like shape was vertically grown, owing to the similar lattice parameter with GaN substrate.

• 한국전기전자재료학회논문지
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• 제20권11호
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• pp.965-968
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• 2007

In this study we investigated the variation of the substrate temperatures using RF sputtering to identify the effect on the structure and electrical properties by c-axis orientation of ZnO thin film. ZnO thin films were prepared on Al/Si substrate. In our experimental results, ZnO thin film at $300^{\circ}C$ was well grown with (002) peak of ZnO thin film, the thin film showed the high resistivity with the value of $5.9{\times}10^7\;{\Omega}cm$ and the roughness with 27.06 nm. As increased the substrate temperatures, the grain size of ZnO thin films was increased. From these results, we could confirm the suitable substrate temperature of ZnO thin films for FBAR(film bulk acoustic resonator).

• 한국초전도ㆍ저온공학회논문지
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• 제10권4호
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• pp.6-8
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• 2008

$Y_{2}O_{3}$ nanodots have been deposited on top of the substrate surface using rf-sputtering method. This approach was adopted to be able to modulate the substrate surface with nanodots used as a seed for the flux pinning sites in the superconducting films. The nanodot density of $Y_{2}O_{3}$ was controlled mainly using the deposition time, rf-power, and substrate temperature. $Y_{2}O_{3}$ nanodots with ${\sim}\;50\;nm$ in diameter and ${\sim}\;3\;nm$ in height were obtained at rf-sputtering time of about 15 seconds using 400 watts of rf-power and $630^{\circ}C$ of substrate temperature. As deposition time increased up to about 30 seconds, the interconnected islands of $Y_{2}O_{3}$ nanodots formed, which can be clearly observed with AFM surface image. The substrate surface was covered entirely with $Y_{2}O_{3}$ layer above the deposition time of 60 seconds. The modulated surface morphologies and cross section analysis of deposited $Y_{2}O_{3}$ nanodots at various experimental conditions have been examined using AFM and discussed with respect to the flux pinning sites for the practical application.

• 한국신재생에너지학회:학술대회논문집
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• 한국신재생에너지학회 2010년도 춘계학술대회 초록집
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• pp.96.2-96.2
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• 2010

The surface morphology and structural properties of polycrystalline silicon (poly-Si) films made in-situ aluminum induced crystallization at various substrate temperature (300~600) was investigated. Silicon films were deposited by hot-wire chemical vapor deposition (HWCVD), as the catalytic or pyrolytic decomposition of precursor gases SiH4 occurs only on the surface of the heated wire. Aluminum films were deposited by DC magnetron sputtering at room temperature. continuous poly-Si films were achieved at low temperature. from cross-section TEM analyses, It was confirmed that poly-Si above $450^{\circ}C$ was successfully grown on and poly-Si films had (111) preferred orientation. As substrate temperature increases, Si(111)/Si(220) ratio was decreased. The electrical properties of poly-Si film were investigated by Hall effect measurement. Poly-Si film was p-type by Al and resistivity and hall effect mobility was affected by substrate temperature.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2009년도 추계학술대회 논문집
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• pp.203-203
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• 2009

Low temperature annealing for oxide TFTs including IGZO on PI substrate is the essential process to fabricate flexible display devices, since low heat-resistance on PI and PEN substrates limits the temperature range. Laser annealing is one of the promising candidates for low temperature process, and it has been used for various application in semiconductor and LCD fabrication. We irradiated laser to solution-based IGZO thin films on PI substrate were irradiated to laser beam, and investigated laser damage of PI layer. Based on transmittance analysis, wavelength(532nm) and scan speed(1000mm/s) is the optimized condition for laser irradiation about ink-Jet printed oxide TFTs on PI substrates.

• 대한전자공학회:학술대회논문집
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• 대한전자공학회 2004년도 하계종합학술대회 논문집(2)
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• pp.347-350
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• 2004

The substrate parameters of Si MOSFET equivalent circuit model were directly extracted from measured S-Parameters in the GHz region by using simple 2-port parameter equations. Using the above extract ion method, bias and gate length dependent curves of substrate parameters in the RF region are obtained by varying drain voltage at several short channel devices with various gate lengths. These extract ion data will greatly contribute to scalable RF nonlinear substrate modeling.

• 미생물학회지
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• 제30권3호
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• pp.171-186
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• 1992

Lipolytic characteristics of candia cylindracea lipase was studied by various triacylglycerols with different fatty acyl chains as substrate. The substrate was emulsified with gum arabic and the rate of hydrolysis was determined by pH stat method. The effects of gum concentration, pH, temperature, and $Ca^{2+}$ ion on the enzyme activities were examined. The results show that the effect of these factors are markedly depending on the structurla nature of substrates. The triolein was the best substrate among tested. Present study demonstrates that for characterization of lipolytic enzymes, it is critically important to select proper substrate and activator.r.

• 한국전기전자재료학회논문지
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• 제22권7호
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• pp.612-615
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• 2009

We need to control the growth orientation of CNTs on a substrate for applications to various electric devices. Generally, the flow direction of feed gases and electric field between two electrode affect to growth orientations of CNTs. In this paper, we varied tilt degrees $(0^{\circ},\;20^{\circ},\;35^{\circ},\;50^{\circ},\;65^{\circ},\;90^{\circ})$ of substrates on a cathode and DC bias voltages (0, 500, 700 V) applied between two electrodes in order to change growth orientations of CNTs. We confirmed that tilt degrees of the substrate and variation of DC bias voltages affected to the shape and orientation of the grown CNTs on the substrate.

• 전기학회논문지
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• 제66권8호
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• pp.1230-1235
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• 2017

We studied surface texture-etching of glass substrate by using reactive ion etching process with various working pressure (0.7~9.0 mT). With the increase in the pressure, a haze parameter, which means diffusive transmittance/total transmittance, was increased in overall wavelength regions, as measured by spectrophotometer. Also, atomic force microscopy (AFM) study also showed that the surface topography transformed from V-shaped, keen surface to U-shaped, flattened surface, which is beneficial for nanocrystalline silicon semiconductor growth with suppressing defective crack formation. The texture-etched ZnO:Al combined with textured glass exhibited pronounced haze properties that showed 60~90 % in overall spectral wavelength regions. This promising optical properties of double textured, transparent conducting substrate can be widely applied in silicon thin film photovoltaics and other optoelectronic devices.

• ETRI Journal
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• 제19권1호
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• pp.26-35
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• 1997

The substrate effects on solid-phase crystallization of amorphous silicon (a-Si) films deposited by low-pressure chemical vapor deposition (LPCVD) using $Si_2H_6$ gas have been extensively investigated. The a-Si films were prepared on various substrates, such as thermally oxidized Si wafer ($SiO_2$/Si), quartz and LPCVD-oxide, and annealed at 600$^{\circ}C$ in an $N_2$ ambient for crystallization. The crystallization behavior was found to be strongly dependent on the substrate even though all the silicon films were deposited in amorphous phase. It was first observed that crystallization in a-Si films deposited on the $SiO_2$/Si starts from the interface between the a-Si and the substrate, so called interface-interface-induced crystallization, while random nucleation process dominates on the other substrates. The different kinetics and mechanism of solid-phase crystallization is attributed to the structural disorderness of a-Si films, which is strongly affected by the surface roughness of the substrates.