• Proceedings of the Korean Ceranic Society Conference
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• 2003.04a
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• pp.172.2-172
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• 2003

• Proceedings of the Korean Ceranic Society Conference
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• 2003.10a
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• pp.108.1-108
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• 2003

• Proceedings of the Korean Ceranic Society Conference
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• 2002.10a
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• pp.89.1-89
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• 2002

• Journal of Sensor Science and Technology
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• v.20 no.4
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• pp.230-233
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• 2011

In this paper, highly-efficient optical gating in a junction device based on vanadium dioxide($VO_2$) thin film grown by a sol-gel method was investigated as a gate terminal of a three-terminal device using infrared light with a wavelength of ~1554.6 nm. Due to the photoinduced phase transition, the threshold voltage of the $VO_2$ junction device, at which the device current abruptly jumps, could be tuned with a sensitivity of ~96.5 V/W by adjusting the optical power of the infrared light directly illuminating the device. Compared with the tuning efficiency of the previous device fabricated using $VO_2$ thin film deposited by a pulsed laser deposition method, the threshold voltage of this device could be tuned by ~76.8 % at an illumination power of ~39.8 mW resulting in a tuning efficiency of ~1.930 %/mW, which is ~4.9 times larger than the previous device.

• Bulletin of the Korean Chemical Society
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• v.26 no.11
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• pp.1743-1748
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• 2005

This work presents that carbon dioxide, which is a main contributor to the global warming effect, could be utilized as a selective oxidant in the oxidative dehydrogenation of ethylbenzene. The dehydrogenation of ethylbenzene over alumina-supported vanadium-antimony oxide catalyst has been studied under different atmospheres such as inert nitrogen, steam, oxygen or carbon dioxide as diluent or oxidant. Among them, the addition of carbon dioxide gave the highest styrene yield (up to 82%) and styrene selectivity (up to 97%) along with stable activity. Carbon dioxide could play a beneficial role of a selective oxidant in the improvement of the catalytic behavior through the oxidative pathway.

• Korean Journal of Metals and Materials
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• v.46 no.9
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• pp.604-608
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• 2008

The layered compounds vanadium disulfide($VS_2$) and vanadium dioxide($VO_2$) intercalated with Li are investigated for using the Discrete Variational $(DV)-X{\alpha}$ molecular orbital method. The chemical bonding properties of the atoms were examined by bond overlap population of electronic states. The plot of density of states supports the covalent bonding properties by showing the overlap between the atoms. There is a strong tendency of covalent bonding between V-S and V-O. The intensity of covalent bonding of $VS_2$ is stronger than $VO_2$. The net charge of $LiVO_2$ is higher than that of $LiVS_2$. This results of the calculation of $VO_2$ and $VS_2$ indicate that $(DV)-X{\alpha}$ method can be widely applied in the new practical materials.

• Journal of Electrical Engineering and Technology
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• v.7 no.5
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• pp.784-788
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• 2012

In this paper, a high-performance optical gating in a junction device based on a vanadium dioxide dioxide ($VO_2$) thin film grown by a sol-gel method was experimentally demonstrated by directly illuminating the $VO_2$ film of the device with an infrared light at ~1554.6 nm. The threshold voltage of the fabricated device could be tuned by ~76.8 % at an illumination power of ~39.8 mW resulting in a tuning efficiency of ~1.930 %/mW, which was ~4.9 times as large as that obtained in the previous device fabricated using the $VO_2$ thin film deposited by a pulsed laser deposition method. The rising and falling times of the optical gating operation were measured as ~50 ms and ~200 ms, respectively, which were ~20 times as rapid as those obtained in the previous device.

• Clean Technology
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• v.21 no.4
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• pp.235-240
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• 2015

In this study, vanadium dioxide was doped with titanium (0~0.5 at %) to improve thermochromic properties. The titanium doped vanadium dioxide (Ti-VO₂) particles were prepared via thermolysis process using vanadyl sulfate, ammonium bicarbonate and titianium chloride as precursors. The crystal structure, morphology, chemical bonding and thermochromic properties were investigated by using XRD, FE-SEM, XPS, DSC and UV-Vis-NIR spectroscopy. It was found that titanium was successfully doped into the crystal lattice of VO₂ and the obtained Ti-VO₂ particles have monoclinic structure. With increasing Ti concentration, the particle size and phase transition temperature of Ti-VO₂ particles decreased and NIR switching efficiency increased.

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.424.1-424.1
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• 2014

Vanadium dioxide (VO2) is a strongly correlated oxide exhibiting a first-order metal-insulator transition (MIT) that is accompanied by a structural phase transition from a low temperature monoclinic phase to a high-temperature rutile phase. VO2 has attracted significant attention because of a variety of possible applications based on its ultrafast MIT. Interestingly, the transition nature of VO2 is significantly affected by stress due to doping and/or interaction with a substrate and/or surface tension as well as defects. Accordingly, there have been considerable efforts to understand the influences of such factors on the phase transition and the fundamental mechanisms behind the MIT behavior. Here, we present the influences of oxygen deficiency, hydrogen doping, and substrate-induced stress on MIT phenomena in single-crystalline VO2 nanobeams. Specifically, the work function and the electrical resistance of the VO2 nanobeams change with the compositional variation due to the oxygen-deficiency-related defects. In addition, the VO2 nanobeams during exposure to hydrogen gas exhibit the reduction of transition temperature and the complex phase inhomogenieties arising from both substrate-induced stress and the formation of the hydrogen doping-induced metallic rutile phase.

• Journal of the Korean Institute of Illuminating and Electrical Installation Engineers
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• v.29 no.11
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• pp.59-65
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• 2015

By harnessing the thermal hysteresis behavior of vanadium dioxide($VO_2$), we demonstrated multi-resistance states in a two-terminal electronic device based on a $VO_2$ thin film by using a 966nm infrared laser diode as an excitation light source for resistance modulation. Before stimulating the device using 966nm laser pulses, the thermal hysteresis behavior of the device resistance was measured by using a temperature chamber. After that, the $VO_2$ device was thermally biased at ${\sim}71.6^{\circ}C$ so that its temperature fell into the thermal hysteresis region of the device resistance. Six multi-states of the device resistance could be obtained in the fabricated $VO_2$ device by five successive laser pulses with equal 10ms duration and increasing power. Each resistance states were maintained while the temperature bias was applied. And, the resistance fluctuation level was within 2.2% of the stabilized resistance and decreased down to less than 0.9% of the stabilized resistance 5s after the illumination.