• 제목/요약/키워드: ultraviolet (UV)

검색결과 1,212건 처리시간 0.03초

폐기물 매립지의 부직포 포설시 UV 영향에 대한 평가 (The Evaluation of Geotextiles by Ultraviolet(UV) Effect during the Landfill Construction)

  • 고재학;이재영
    • 한국지하수토양환경학회:학술대회논문집
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    • 한국지하수토양환경학회 1998년도 공동 심포지엄 및 추계학술발표회
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    • pp.206-215
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    • 1998
  • Using of geosynthetics with linear materials(sand, gravel, clay soil) is rapidly increased in landfill. With geosynthetics, geotextiles often expose to solar radiation(Ultraviolet) on long terms during the installation. In this paper, the results will represent the strength retention rate and tensile retention rate of geotextiles between outdoor exposed and protected by 15cm thickness of soil. As a result of cumulating solar radiation in geotextiles was increased, the strength retentions rate of P.P(500g/$m^2$), P.P(700g/$m^2$) and P.P(1000g/$m^2$) were decreased and the lower weight of unit area of geotextiles, the faster decrease of strength retention rate. P.E.T(600g/$m^2$) was showed a distinctive trend that the strength retention rate increased. The tensile retention rate of tested geotextiles was decreased during the simulation. However, the strength and tensile retention rate of geotextiles covered by soil had changed insignificantly. Therefore, it can surmise that the soil covering will help geotextiles to be protected from UV effecting

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Analysis of Deep-Trap States in GaN/InGaN Ultraviolet Light-Emitting Diodes after Electrical Stress

  • Jeong, Seonghoon;Kim, Hyunsoo;Lee, Sung-Nam
    • Journal of the Korean Physical Society
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    • 제73권12호
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    • pp.1879-1883
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    • 2018
  • We analyzed the deep-trap states of GaN/InGaN ultraviolet light-emitting diodes (UV LEDs) before and after electrical stress. After electrical stress, the light output power dropped by 5.5%, and the forward leakage current was increased. The optical degradation mechanism could be explained based on the space-charge-limited conduction (SCLC) theory. Specifically, for the reference UV LED (before stress), two sets of deep-level states which were located 0.26 and 0.52 eV below the conduction band edge were present, one with a density of $2.41{\times}10^{16}$ and the other with a density of $3.91{\times}10^{16}cm^{-3}$. However, after maximum electrical stress, three sets of deep-level states, with respective densities of $1.82{\times}10^{16}$, $2.32{\times}10^{16}cm^{-3}$, $5.31{\times}10^{16}cm^{-3}$ were found to locate at 0.21, 0.24, and 0.50 eV below the conduction band. This finding shows that the SCLC theory is useful for understanding the degradation mechanism associated with defect generation in UV LEDs.

자외선 광을 활용하는 화학기계적 연마에 관한 연구 동향 (Research Trends on Chemical Mechanical Polishing Using Ultraviolet Light)

  • 이현섭
    • Tribology and Lubricants
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    • 제38권6호
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    • pp.247-254
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    • 2022
  • Chemical mechanical polishing (CMP) is a hybrid surface-polishing process that utilizes both mechanical and chemical energy. However, the recently emerging semiconductor substrate and thin film materials are challenging to process using the existing CMP. Therefore, previous researchers have conducted studies to increase the material removal rate (MRR) of CMP. Most materials studied to improve MRR have high hardness and chemical stability. Methods for enhancing the material removal efficiency of CMP include additional provision of electric, thermal, light, mechanical, and chemical energies. This study aims to introduce research trends on CMP using ultraviolet (UV) light to these methods to improve the material removal efficiency of CMP. This method, photocatalysis-assisted chemical mechanical polishing (PCMP), utilizes photocatalytic oxidation using UV light. In this study, the target materials of the PCMP application include SiC, GaN, GaAs, and Ru. This study explains the photocatalytic reaction, which is the basic principle of PCMP, and reviews studies on PCMP according to materials. Additionally, the researchers classified the PCMP system used in existing studies and presented the course for further investigation of PCMP. This study aims to aid in understanding PCMP and set the direction of future research. Lastly, since there have not been many studies on the tribology characteristics in PCMP, research on this is expected to be required.

피부에 대한 자외선의 유해작용 (Harmful Effects of UV Light on the Skin)

  • 안병길
    • 대한화장품학회:학술대회논문집
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    • 대한화장품학회 1992년도 자외선 차단 화장품의 SPF에 관한 심포지움(대한화장품학회)
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    • pp.69-78
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    • 1992
  • It is well hewn that ultraviolet light(UV) penetrates into the skin depends on the wavelength and causes many biochemical reactions in the skin. The enormous amount of information reveals that UV effects sun-burn, sun-tan and photoaging etc. In addition to these, it is now recognized that UV initiates immuno-suppression, and associated with this, skin cancer. In this review, I tried to illuminate the processes of injurious effects of UV on the skin.

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An Ultraviolet Study of Star-Forming Regions in M33

  • Kang, Yongbeom;Rey, Soo-Chang;Bianchi, Luciana
    • 천문학회보
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    • 제41권2호
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    • pp.62.3-63
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    • 2016
  • We studied the young stellar populations of star-forming (SF) regions in M33 based on the Galaxy Evolution Explorer (GALEX) ultraviolet (UV) imaging data. The SF regions are defined from far-UV data with various thresholds. We examined the reddening and spatial distribution of hot massive stars within SF regions from Hubble Space Telescope multi-band survey and Local Group Galaxy Survey (LGGS) data. The H-alpha sources from the LGGS are used for comparing with the spatial distribution of SF regions. The GALEX UV flux measurements of SF regions are used to derive their ages and masses. We also estimated the size and density of SF regions. The younger and compact SF regions are often arranged within older and sparser SF complexes. The results allow us to understand the hierarchical star formation and recent evolution of M33.

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Effects of Ultraviolet Surface Treatment on Adhesion Strength of Carbon/Epoxy Composite

  • Kim, Jong-Min;Lee, Dai-Gil
    • 한국복합재료학회:학술대회논문집
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    • 한국복합재료학회 2002년도 추계학술발표대회 논문집
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    • pp.15-19
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    • 2002
  • In this work, the surface modification of carbon/epoxy composites was investigated using UV (ultraviolet ray) surface treatment to increase adhesion strength between the carbon/epoxy composites and adhesives. After UV surface treatment, XPS (X-ray photoelectron spectroscopy) tests were performed to analyze the surface characteristics of the carbon/epoxy composites. Comparing adhesion strengths with the surface characteristics, the effects of the surface modification of carbon/epoxy composites by UV surface treatments on the adhesion strengths were investigated.

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ZnO:Er막의 UV 발광에 미치는 열처리 효과 (Annealing effects of ZnO:Er films on UV emission)

  • 최무희;마대영
    • 센서학회지
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    • 제18권4호
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    • pp.316-321
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    • 2009
  • Er-doped ZnO(ZnO:Er) films were deposited onto MgO wafers by ultrasonic spray pyrolysis at 550 $^{\circ}C$ varying the concentration of Er in the deposition source from 0.5 wt% to 3.0 wt%. Annealing of the films in a vacuum was carried out to increase the intensity of ultraviolet(UV) emission from the films. The annealing temperature was between 600$^{\circ}C$ and 800$^{\circ}C$. The crystallographic properties and surface morphology of the films were investigated by X-ray diffraction(XRD)and scanning electron microscope(SEM), respectively. The properties of photoluminescence(PL) for the films were investigated by the dependence of PL spectra on the annealing temperature. X-ray photoelectron spectroscopy(XPS) was conducted to find the composition change in the films by the annealing.

380-nm Ultraviolet Light-Emitting Diodes with InGaN/AlGaN MQW Structure

  • Bae, Sung-Bum;Kim, Sung-Bok;Kim, Dong-Churl;Nam, Eun Soo;Lim, Sung-Mook;Son, Jeong-Hwan;Jo, Yi-Sang
    • ETRI Journal
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    • 제35권4호
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    • pp.566-570
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    • 2013
  • In this paper, we demonstrate the capabilities of 380-nm ultraviolet (UV) light-emitting diodes (LEDs) using metal organic chemical vapor deposition. The epi-structure of these LEDs consists of InGaN/AlGaN multiple quantum wells on a patterned sapphire substrate, and the devices are fabricated using a conventional LED process. The LEDs are packaged with a type of surface mount device with Al-metal. A UV LED can emit light at 383.3 nm, and its maximum output power is 118.4 mW at 350 mA.

Ultraviolet Photodetection Properties of ZnO/Si Heterojunction Diodes Fabricated by ALD Technique Without Using a Buffer Layer

  • Hazra, Purnima;Singh, S.K.;Jit, S.
    • JSTS:Journal of Semiconductor Technology and Science
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    • 제14권1호
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    • pp.117-123
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    • 2014
  • The fabrication and characterization of a Si/ZnO thin film heterojunction ultraviolet photodiode has been presented in this paper. ZnO thin film of ~100 nm thick was deposited on <100> Silicon (Si) wafer by atomic layer deposition (ALD) technique. The Photoluminescence spectroscopy confirms that as-deposited ZnO thin film has excellent visible-blind UV response with almost no defects in the visible region. The room temperature current-voltage characteristics of the n-ZnO thin film/p-Si photodiodes are measured under an UV illumination of $650{\mu}W$ at 365 nm in the applied voltage range of ${\pm}2V$. The current-voltage characteristics demonstrate an excellent UV photoresponse of the device in its reverse bias operation with a contrast ratio of ~ 1115 and responsivity of ~0.075 A/W at 2 V reverse bias voltage.