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http://dx.doi.org/10.5573/JSTS.2014.14.1.117

Ultraviolet Photodetection Properties of ZnO/Si Heterojunction Diodes Fabricated by ALD Technique Without Using a Buffer Layer  

Hazra, Purnima (Department of Electronics Engineering, Indian Institute of Technology(Banaras Hindu University))
Singh, S.K. (Department of Electrical Engineering, Mewar University)
Jit, S. (Department of Electronics Engineering, Indian Institute of Technology(Banaras Hindu University))
Publication Information
JSTS:Journal of Semiconductor Technology and Science / v.14, no.1, 2014 , pp. 117-123 More about this Journal
Abstract
The fabrication and characterization of a Si/ZnO thin film heterojunction ultraviolet photodiode has been presented in this paper. ZnO thin film of ~100 nm thick was deposited on <100> Silicon (Si) wafer by atomic layer deposition (ALD) technique. The Photoluminescence spectroscopy confirms that as-deposited ZnO thin film has excellent visible-blind UV response with almost no defects in the visible region. The room temperature current-voltage characteristics of the n-ZnO thin film/p-Si photodiodes are measured under an UV illumination of $650{\mu}W$ at 365 nm in the applied voltage range of ${\pm}2V$. The current-voltage characteristics demonstrate an excellent UV photoresponse of the device in its reverse bias operation with a contrast ratio of ~ 1115 and responsivity of ~0.075 A/W at 2 V reverse bias voltage.
Keywords
ZnO; silicon; ALD; heterojunction photodiode; contrast ratio; responsivity;
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Times Cited By KSCI : 2  (Citation Analysis)
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