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http://dx.doi.org/10.4218/etrij.13.1912.0029

380-nm Ultraviolet Light-Emitting Diodes with InGaN/AlGaN MQW Structure  

Bae, Sung-Bum (Components & Materials Research Laboratory, ETRI)
Kim, Sung-Bok (Components & Materials Research Laboratory, ETRI)
Kim, Dong-Churl (Components & Materials Research Laboratory, ETRI)
Nam, Eun Soo (Components & Materials Research Laboratory, ETRI)
Lim, Sung-Mook (Sensor Division, Genicom)
Son, Jeong-Hwan (Sensor Division, Genicom)
Jo, Yi-Sang (Sensor Division, Genicom)
Publication Information
ETRI Journal / v.35, no.4, 2013 , pp. 566-570 More about this Journal
Abstract
In this paper, we demonstrate the capabilities of 380-nm ultraviolet (UV) light-emitting diodes (LEDs) using metal organic chemical vapor deposition. The epi-structure of these LEDs consists of InGaN/AlGaN multiple quantum wells on a patterned sapphire substrate, and the devices are fabricated using a conventional LED process. The LEDs are packaged with a type of surface mount device with Al-metal. A UV LED can emit light at 383.3 nm, and its maximum output power is 118.4 mW at 350 mA.
Keywords
GaN; UV; LED; MQW; MOCVD;
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