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http://dx.doi.org/10.5369/JSST.2009.18.4.316

Annealing effects of ZnO:Er films on UV emission  

Choi, Mu-Hee (Department of Electrical Engineering and ERI, Gyeongsang National University)
Ma, Tae-Young (Department of Electrical Engineering and ERI, Gyeongsang National University)
Publication Information
Journal of Sensor Science and Technology / v.18, no.4, 2009 , pp. 316-321 More about this Journal
Abstract
Er-doped ZnO(ZnO:Er) films were deposited onto MgO wafers by ultrasonic spray pyrolysis at 550 $^{\circ}C$ varying the concentration of Er in the deposition source from 0.5 wt% to 3.0 wt%. Annealing of the films in a vacuum was carried out to increase the intensity of ultraviolet(UV) emission from the films. The annealing temperature was between 600$^{\circ}C$ and 800$^{\circ}C$. The crystallographic properties and surface morphology of the films were investigated by X-ray diffraction(XRD)and scanning electron microscope(SEM), respectively. The properties of photoluminescence(PL) for the films were investigated by the dependence of PL spectra on the annealing temperature. X-ray photoelectron spectroscopy(XPS) was conducted to find the composition change in the films by the annealing.
Keywords
ZnO:Er films; ultrasonic spray pyrolysis; ultraviolet emission; photoluminescence;
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Times Cited By KSCI : 3  (Citation Analysis)
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