• Journal of the Korean Statistical Society
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• 제26권1호
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• pp.75-88
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• 1997

In this paper, a two-parameter version of Ikeda-Watanabe's mollifiers approximation of the Brownian motion is considered, and an approximation theorem corresponding to the one parameter case is proved. Using this approximation, we formulate Wong-Zakai type theorem is a Stochastic Differential Equation (SDE) driven by a two-parameter Wiener process.

• 대한수학회보
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• 제57권3호
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• pp.751-762
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• 2020

We define the average of a set of continuous functions of two variables (surfaces) using the structure of the two-parameter Wiener space that constitutes a probability space. The average of a sample set in the two-parameter Wiener space is defined employing the two-parameter Wiener process, which provides the concept of distribution over the two-parameter Wiener space. The average defined in our work, called an average function, also turns out to be a continuous function which is very desirable. It is proved that the average function also lies within the range of the sample set. The average function can be applied to model 3D shapes, which are regarded as their boundaries (surfaces), and serve as the average shape of them.

• 대한수학회논문집
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• 제13권4호
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• pp.865-874
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• 1998

A modulus of continuity on the increments of a two-parameter Gaussian process is obtained via estimating large deviation probability inequalities on the suprema of the Gaussian process.

• 대한수학회지
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• 제38권3호
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• pp.577-594
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• 2001

In this paper we establish limit theorems on the large and small increments of a two-parameter Gaussian random process on rectangles in the Euclidean plane via estimating upper bounds of large deviation probabilities on suprema of the two-parameter Gaussian random process.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1993년도 추계학술대회 논문집
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• pp.29-34
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• 1993

In this paper, we used one-dimensional process simulator, SUPREM-II, and two-dimensional device simulator, MINIMOS 4.0 to extract optimal process parameter that can minimize degradation of device characteristics caused by process parameter variation in the case of short channel nMOSFET and pMOSFET device. From this simulation, we have derieved the relationship between process parameter and device characteristics. Here we have presented a method to extract process parameters from design trend curve(DTC) obtained by process and device simulations. We parameters to verify the validity of the DTC method. The experimental result of 0.8 $\mu\textrm{m}$ channel length devices that have been fabricated with optimal that reduces short channel effects, that is, good drain current-voltage characteristics, low body effects and threshold voltage of 1.0 V, high punchthrough and breakdown voltage of 12 V, low subthreshold swing(S.S) values of 105 mV/decade.

• Communications for Statistical Applications and Methods
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• 제15권6호
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• pp.959-967
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• 2008

In this paper we show the weak convergence of the linear random(multistochastic process) field generated by identically distributed 2-parameter array of associated random variables. Our result extends the result in Newman and Wright (1982) to the linear 2-parameter processes as well as the result in Kim and Ko (2003) to the 2-parameter case.

• Transactions on Control, Automation and Systems Engineering
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• 제2권2호
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• pp.130-135
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• 2000

A two parameter model of a single fictitious weak acid with unknown dissociation constant has been successfully applied to design a neutralization system for many multi-component acid streams. But there are some processes for which above two parameter model is not satisfactory due to poor approxmation of the nonlinearity of pH process. Here, for etter control of wide class of multi-component acid streams, a three parameter model of a strong acid and a weak acid with unknown dissociation constant is proposed. The model approximates effectively three types of largest gain variation nonlinearities. Based on this model a nonlinear pH control system is designed. Parameters can eeasily estimated since their combinations appear linearly in the model equations and nonlinear adaptive control system may also be constructed just as with the two parameter model.

• Communications for Statistical Applications and Methods
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• 제3권1호
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• pp.235-242
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• 1996

When the linear growth birth and death process observed at a set of equidistant time points, McNeil and Weiss (1997) present a method for simultaneously estimating the Malthusian parameter and the sum of the two parameters under wery restricted assumptions using a diffusion approximation. This article suggests a method, which does not require the restrictions given by Weiss, for estimating simultaneously the Malthusian parameter and the sum of the two parameters.

• E2M - 전기 전자와 첨단 소재
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• 제7권2호
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• pp.107-116
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• 1994

In the manufacturing of VLSI circuits, variations of device characteristics due to the slight differences in process parameters drastically aggravate the performances of fabricated devices. Therefore, it is very important to establish optimal process conditions in order to minimize deviations of device characteristics. In this paper, we used one-dimensional process simulator, SUPREM-II, and two dimensional device simulator, MINIMOS 4.0 in order to extract optimal process parameter which can minimize changes of the device characteristics caused by process parameter variation in the case of short channel nMOSFET and pMOSFET device. From this simulation, we have derived the dependence relations between process parameters and device characteristics. Here, we have suggested a method to extract process parameters from design trend curve(DTC) obtained by these dependence relations. And we have discussed short channel effects and device limitations by scaling down MOSFET dimensions.

• Structural Engineering and Mechanics
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• 제27권5호
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• pp.555-574
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• 2007

Static response of an elastic beam on a two-parameter tensionless foundation is investigated by assuming that the beam is symmetrically subjected to a uniformly distributed load and concentrated edge loads. Governing equations of the problem are obtained and solved by pointing out that a concentrated edge foundation reaction in addition to a continuous foundation reaction along the beam axis in the case of complete contact and a discontinuity in the foundation reactions in the case of partial contact come into being as a direct result of the two-parameter foundation model. The numerical solution of the complete contact problem is straightforward. However, it is shown that the problem displays a highly non-linear character when the beam lifts off from the foundation. Numerical treatment of the governing equations is accomplished by adopting an iterative process to establish the contact length. Results are presented in figures to demonstrate the linear and non-linear behavior of the beam-foundation system for various values of the parameters of the problem comparatively.