• Proceedings of the KIPE Conference
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• 2010.07a
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• pp.487-488
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• 2010

This paper proposes a soft switching boost converter with an auxiliary circuit. This circuit helps a main switch operate as a soft switching. The main switch operates ZVS turn-on and ZVS turn-off. And the auxiliary switch operates ZCS turn-on and ZVS turn-off. In this paper, operation modes are analyzed and soft switching operation is verified through simulations.

• The Transactions of the Korean Institute of Electrical Engineers
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• v.43 no.4
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• pp.607-612
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• 1994

The static and dynamic model of IGBT for the SPICE simulation has been successfully developed. The various circuit model parameters are extracted from the I-V and C-V characteristics of IGBT and implemented into our model. The static model of IGBT consists of the MOSFET, bipolar transistor and series resistance. The parameters to be extracted are the threshold voltage of MOSFET, current gain $\beta$ of bipolar transistor, and the series resistance. They can be extracted from the measured I-V characteristics curve. The C-V characteristics between the terminals are very important parameters to determine the turn-on and turn-off waveform. Especially, voltage dependent capacitance are polynomially approximated to obtain the exact turn-on and turn-off waveforms. The SPICE simulation results employing new model agree well with the experimental values.

• Korean Journal of Applied Biomechanics
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• v.16 no.2
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• pp.65-73
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• 2006

The aim of this study was to find out the differences of Kinematics factors from touching down the vaulting board to landing when techniques of 1/1Turn and Tucked were performed on the old vaulting horse and on the new vaulting table. Three national representative men gymnasts were sampled for this study. Three dimension motion analyses by means of six Sony PD-150 video cameras with the velocity of 60 fps were used As a result of analyzing the kinematic data from two kind of vaulting table, the following conclusions were made. 1. The performing time from taking off the vaulting horse to landing(phase 4) in the 1/1 Turn technique on the new vaulting table was significantly longer than that of the old vaulting horse, while the time from contacting to taking off the vaulting horse on the new vaulting table was shorter than that of the old vaulting horse in both and the Tucked techniques. 2. The vertical release COG velocity was faster on the new vaulting table compare to the old vaulting horse in the all kind technique. However the horizontal release COG velocity of the 1/1 Turn technique was faster a little in the old vaulting horse compare to the new vaulting table.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.33 no.3
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• pp.177-180
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• 2020

This paper focuses on the 1,200-V level reverse conducting-insulated gate bipolar transistor (RC-IGBT). The structure of the RC-IGBT has an n+ collector at the collector terminal. The breakdown voltage, V_th, V_ce-sat, and turn-off time, and the electrical characteristics of a field-stop IGBT (FS-IGBT) and RC-IGBT are compared and analyzed using simulations. Based on the results, the RC-IGBT obtained a turn-off time of 320.6 ㎲ and a breakdown voltage of 1,720 V, while the FS-IGBT obtained a turn-off time of 742.2 ㎲ and a breakdown voltage of 1,440 V. Therefore, RC-IGBTs have faster on/off transitions and a higher breakdown voltage, which can reduce the size of the element.

• Proceedings of the KIEE Conference
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• 1994.07a
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• pp.376-378
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• 1994

The turn-off behavior of the GTO Thyristor by its nature differs very much from that of other power f semiconductor switching devices. So canful attention should be paid in designing the GTO snubber circuit. This paper presents the effect of turn-off snubber circuit elements on the switching characteristics of the GTO, and describes considerations and criteria for the selection of the snubber component values.

• Proceedings of the KIEE Conference
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• 1997.11a
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• pp.487-489
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• 1997

The control of the switched reluctance motor is usually on the inductance profiles as a function of position. In this paper, a control scheme to maximize the motor torque is proposed by determining optimal turn-off angle with a self-tuning control method.

• Proceedings of the KIPE Conference
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• 1998.10a
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• pp.241-245
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• 1998

This paper gives the novel design of compensated ring anode-short for power GTO thyristor. By means of this design the power GTO of $\Phi$63.5mm 2500A/4500V reaches more uniform turn-off compared with conventional ring short GTO, resulting in higher turn-off ability and low tail current/tail time.

• Proceedings of the KIPE Conference
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• 1998.07a
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• pp.428-432
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• 1998

A passive energy recovery snubber for high-power-factor boost rectifier, in which the main switch is implemented with a MOSFET, is described in terms of the equivalent circuits that are operational during turn-on and turn-off sequences. The main switch combined with proposed snubber can be turned on with zero current and turned off at limited voltage stress. The high-power-factor boost rectifier with proposed snubber is implemented, and the experimental results are presented to confirm the validity of proposed snubber.

• Proceedings of the KIPE Conference
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• 1998.07a
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• pp.323-327
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• 1998

Under high power IGBTs Switching, a large overvoltage is induced across the IGBT module due to the stray inductance in the circuit. This paper proposes a new gate drive circuit for high power IGBTs which can actively suppress the overvoltage across the driven IGBT at turn-off while preserving the most simple and reliable power circuit. The turn-off driving scheme has adaptive feature to the amplitude of collector current, so that the overvoltage can be limited much effectively at the fault collector current. Experimental results under various normal and fault conditions prove the effectiveness of the proposed.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.44 no.12
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• pp.43-53
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• 2007

We have analyzed low current operation characteristics of a VCSEL transmitter operating at fixed Current over wide temperature range. Used 850 nm oxide VCSEL has low temperature dependence of the threshold current and $d^2I_{th}/dT^2$ is approximately $1.346\times10^{-4}mA/^{\circ}C^2$. We fixed on-current so that output power from the chip is 1 mW at $20^{\circ}C$ and investigated the turn-on, turn-off characteristics and eye-diagram of the 850 nm oxide VCSEL transmitter with varying ambient temperature and off-current. We measured rise time, fall time, extinction ratio and timing jitter by changing tile ambient temperature and off-current. With the fixed off-current of around $0.1\sim0.2mA$ lower than the lowest threshold current the transmitter successfully operated at 1.25 Gbps over a wide temperature range from $-20^{\circ}C$ to $80^{\circ}C$.