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http://dx.doi.org/10.4313/JKEM.2020.33.3.177

Electrical Characteristics of 1,200 V Reverse Conducting-IGBT  

Kim, Se Young (Department of Energy IT Engineering, Far East University)
Ahn, Byoungsub (Department of Energy IT Engineering, Far East University)
Kang, Ey Goo (Department of Energy IT Engineering, Far East University)
Publication Information
Journal of the Korean Institute of Electrical and Electronic Material Engineers / v.33, no.3, 2020 , pp. 177-180 More about this Journal
Abstract
This paper focuses on the 1,200-V level reverse conducting-insulated gate bipolar transistor (RC-IGBT). The structure of the RC-IGBT has an n+ collector at the collector terminal. The breakdown voltage, Vth, Vce-sat, and turn-off time, and the electrical characteristics of a field-stop IGBT (FS-IGBT) and RC-IGBT are compared and analyzed using simulations. Based on the results, the RC-IGBT obtained a turn-off time of 320.6 ㎲ and a breakdown voltage of 1,720 V, while the FS-IGBT obtained a turn-off time of 742.2 ㎲ and a breakdown voltage of 1,440 V. Therefore, RC-IGBTs have faster on/off transitions and a higher breakdown voltage, which can reduce the size of the element.
Keywords
Reverse conducting; IGBT; Breakdown voltage; Latch-up; Power device;
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Times Cited By KSCI : 6  (Citation Analysis)
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1 E. G. Kang, J. Korean Inst. Electr. Electron. Mater. Eng., 29, 263 (2016). [DOI: https://doi.org/10.4313/JKEM.2016.29.5.263]   DOI
2 J. Won, J. G. Koo, T. Rhee, H. S. Oh, and J. H. Lee, Electron. Telecommun. Res. Inst., 35, 603 (2013). [DOI: https://doi.org/10.4218/etrij.13.1912.0030]
3 J. M. Geum, E. S. Jung, E. G. Kang, and M. Y. Sung, J. Korean Inst. Electr. Electron. Mater. Eng., 25, 253 (2012). [DOI: https://doi.org/10.4313/JKEM.2012.25.4.253]   DOI
4 E. G. Kang, J. Korean Inst. Electr. Electron. Mater. Eng., 29, 523 (2016). [DOI: https://doi.org/10.4313/JKEM.2016.29.9.523]   DOI
5 E. G. Kang, J. Korean Inst. Electr. Electron. Mater. Eng., 21, 1 (2017). [DOI: https://doi.org/10.7471/ikeee.2017.21.1.1]   DOI
6 E. G. Kang, Trans. Electr. Electron. Mater., 17, 50 (2016). [DOI: https://doi.org/10.4313/TEEM.2016.17.1.50]   DOI