An Improved Gate Control Scheme for Overvoltage Clamping Under High Power IGBTs Switching

IGBT 스위칭시 괴전압 제한을 위한 게이트 구동기법

Under high power IGBTs Switching, a large overvoltage is induced across the IGBT module due to the stray inductance in the circuit. This paper proposes a new gate drive circuit for high power IGBTs which can actively suppress the overvoltage across the driven IGBT at turn-off while preserving the most simple and reliable power circuit. The turn-off driving scheme has adaptive feature to the amplitude of collector current, so that the overvoltage can be limited much effectively at the fault collector current. Experimental results under various normal and fault conditions prove the effectiveness of the proposed.