• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2017.10a
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• pp.243-244
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• 2017

This paper introduces about the difference between the tunneling currents in the 1D and 2D directions for the calculation of the band-to-band tunneling currents of the tunneling field effect transistors. In the two-dimensional tunneling, diagonal tunneling is not calculated in the one-dimensional tunneling so that more accurate tunneling current can be calculated. Simulation results show that the tunneling in the two - dimensional direction has no effect on the voltage above the threshold voltage, but it affects the subthreshold swing below the threshold voltage.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.19 no.7
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• pp.1617-1622
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• 2015

This paper analyzes the ratio of tunneling current for channel doping concentration of sub-10 nm asymmetric double gate(DG) MOSFET. The ratio of tunneling current for off current in subthreshold region increases in the region of channel length of 10 nm below. Even though asymmetric DGMOSFET is developed to reduce short channel effects, the increase of tunneling current in sub-10 nm is inevitable. As the ratio of tunneling current in off current according to channel doping concentration is calculated in this study, the influence of tunneling current to occur in short channel is investigated. To obtain off current to consist of thermionic emission and tunneling current, the analytical potential distribution is obtained using Poisson equation and tunneling current using WKB(Wentzel-Kramers-Brillouin). As a result, tunneling current is greatly changed for channel doping concentration in sub-10 nm asymmetric DGMOSFET, specially with parameters of channel length, channel thickness, and top/bottom gate oxide thickness and voltage.

• Journal of the Korean Institute of Telematics and Electronics A
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• v.29A no.8
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• pp.71-77
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• 1992

According to increasing the doping concentration in p-n junction, a tunneling current through trap as well as SRH(Shockley-Read-Hall) generation-recombination current in depletion region occurs. It is the tunneling current that is a dominant current at the forward bias. In this paper, the new tunneling-recombination equation is derived. The thermal generation-recombination current and tunneling current though trap can be easily calculated at the same time because this equation has the same form as the SRH generation-recombination equation. For the validity of this equation, 2 kind of samples are simulated. The one is $n^{+}$-p junction device fabricated with MCT(Mercury Cadmium Telluride, mole fraction=0.29), the other Si n$^{+}-p^{+}$ junction. From the results for MCT $n^{+}$-p junction device and comparing the simulated and expermental I-V characteristics for Si n$^{+}-p^{+}$ junction, it is shown that this equation is a good description for tunneling through trap and thermal generation-recombination current calculation.

• Proceedings of the KIEE Conference
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• 1995.11a
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• pp.544-546
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• 1995

Tunneling of an electron non-normally incident on a potential barrier is theoretically studied. Tunneling time and the position where an electron appears after the tunneling are derived using the phase time approach. The positions where photons appear after two-dimensional tunneling in a frustrated total internal reflection structure are also discussed.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2016.10a
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• pp.611-613
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• 2016

The characteristics of tunnel field-effect transistor(TFET) structure with source-overlapped gate was investigated using a TCAD simulations. Tunneling is mostly divided into line-tunneling and point-tunneling, and line-tunneling is higher performance than point-tunneling in terms of subthreshold swing(SS) and on-current. In this paper, from the simulation results of source-overlapped gate length effects at silicon(Si), germanium(Ge), Si-Ge hetero TFET structure, the guideline of optimal structure with highest performance are proposed.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.11a
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• pp.53-53
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• 2009

Charge trap flash memory devices with modified tunneling barriers were fabricated using the tunneling barrier engineering technique. Variable oxide thickness (VARIOT) barrier and CRESTED barrier consisting of thin $SiO_2$ and $Si_3N_4$ dielectric layers were used as engineered tunneling barriers. The VARIOT type tunneling barrier composed of oxide-nitride-oxide (ONO) layers revealed reliable electrical characteristics; long retention time and superior endurance. On the other hand, the CRESTED tunneling barrier composed of nitride-oxide-nitride (NON) layers showed degraded retention and endurance characteristics. It is found that the degradation of NON barrier is associated with the increase of interface state density at tunneling barrier/silicon channel by programming and erasing (P/E) stress.

• Proceedings of the Korean Institute of Intelligent Systems Conference
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• 1998.06a
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• pp.740-749
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• 1998

This paper proposes compression of image data using neural networks based on conjugate gradient method and dynamic tunneling system. The conjugate gradient method is applied for high speed optimization .The dynamic tunneling algorithms, which is the deterministic method with tunneling phenomenon, is applied for global optimization. Converging to the local minima by using the conjugate gradient method, the new initial point for escaping the local minima is estimated by dynamic tunneling system. The proposed method has been applied the image data compression of 12 ${\times}$12 pixels. The simulation results shows the proposed networks has better learning performance , in comparison with that using the conventional BP as learning algorithm.

• Proceedings of the Korean Geotechical Society Conference
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• 2004.03b
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• pp.415-424
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• 2004

This paper presents the effect of groundwater on tunneling performance. The interaction between the tunneling and groundwater was examined using a 3D stress-pore pressure coupled finite-element analysis, The results of the 3D coupled analysis were then compared with those of a total stress analysis. Examined items included pore pressures around lining and lining forces. Also examined include face displacements and ground surface movements, The results indicated that the interaction between the tunneling and ground water significantly increases the lining forces and ground deformations, and that the effect of ground water on tunneling can only be captured through a fully coupled analysis, Implementations of the findings from this study arc discussed in great detail.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.06a
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• pp.189-190
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• 2008

The electrical characteristics of band-gap engineered tunneling barriers consisting of thin $SiO_2$ and $Si_3N_4$ dielectric layers were investigated. The band structure of stacked tunneling barriers was studied and the effectiveness of these tunneling barriers was compared with that of the conventional tunneling barrier. The band-gap engineered tunneling barriers show the lower operation voltage, faster speed and longer retention time than the conventional $SiO_2$ tunnel barrier. The thickness of each $SiO_2$ and $Si_3N_4$ layer was optimized to improve the performance of non-volatile memory.

• Journal of the Optical Society of Korea
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• v.12 no.4
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• pp.314-318
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• 2008

We investigate the conditions of the complete tunneling of light across a composite barrier made of multiple layers involving metamaterials. It is shown that complete tunneling phenomena are related to the resonance transmission properties of local modes formed in barrier layers and that there are two distinctive kinds of local barrier modes involved in actual complete tunneling: the degenerate inner-barrier mode and the full barrier mode. Complete tunneling occurs via two successive mode couplings: from the incident plane wave to the plane wave in the transmission layer through the direct mediation of these two kinds of local barrier modes.