• 한국의학물리학회지:의학물리
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• 제32권1호
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• pp.18-24
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• 2021

Purpose: Kilovoltage computed tomography (kV-CT) is essential for radiation treatment planning. However, kV-CT images are significantly distorted by artifacts when a metallic prosthesis is present in the patient's body. Thus, the accuracies of target delineation and treatment dose calculation are inevitably lowered. We evaluated the accuracy of the calculated doses using an image restoration method with hybrid CT, which was introduced in our previous study. Methods: A cylindrical phantom containing four metals, namely, silver, copper, tin, and tungsten, was scanned using kV-CT and megavoltage CT to produce hybrid CT images. We created six verification plans for three head and neck patients on kV-CT and hybrid CT images of the phantom and calculated their doses. The actual doses were measured with film patches during beam delivery using tomotherapy. We used the gamma evaluation method to compare dose distribution between kV-CT and hybrid CT with three gamma criteria, namely, 3%/3 mm, 2%/2 mm, and 1%/1 mm. Results: The gamma pass rates decreased as the gamma criteria were strengthened, and the pass rate of hybrid CT was higher than that of kV-CT in all cases. When the 1%/1 mm criterion was used, the difference in gamma pass rates between them was up to 13%p. Conclusions: According to our findings, we expect that the use of hybrid CT can be a suitable approach to avoid the effect of severe metal artifacts on the accuracy of dose calculation and contouring.

• Tribology and Lubricants
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• 제38권4호
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• pp.162-169
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• 2022

Cobalt-chromium (CoCr)-based alloys have been used for wear applications because of their excellent mechanical properties and wear resistance. With growing concern over environmental problems, CoCr alloys are expected to be used for various tribological applications in degraded lubrication states. To expand the applicability of the materials, data should be accumulated across a broad spectrum of experimental parameters. In this work, the friction and wear characteristics of cobalt-chromium-tungsten (CoCrW) and cobalt-chromium-molybdenum (CoCrMo) alloys are investigated experimentally. The tests are conducted using a pin-on-reciprocating-plate tribotester in dry lubrication. CoCrW and CoCrMo are used as pin and plate materials to investigate the effect of the counter material. The results show that the friction coefficients between CoCrW and CoCrMo generally range from 0.4 to 0.5. The friction coefficient between the CoCrW pin and plate is found to be slightly small. However, the total wear between the CoCrW pin and plate is found to be the largest. In contrast, the total wear between the CoCrW pin and plate is relatively small. Furthermore, CoCrW may cause a faster wear progression of CoCrMo, especially for the case in which CoCrMo is used as the pin material. The results of this work provide a better understanding of the tribological properties of CoCrW and CoCrMo alloys. In addition, this work provides a practical guideline for the use of CoCrW and CoCrMo from the tribological design viewpoint.

• 열처리공학회지
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• 제36권5호
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• pp.298-302
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• 2023

Transparent and conducting tungsten (W) doped indium oxide (IWO) thin films were deposited on the glass substrate by using RF magnetron sputtering and then electron irradiation was conducted to investigate the effect of electron irradiation on the optical and electrical properties of the films. The electron irradiated films showed three x-ray diffraction peaks of the In₂O₃ (222), (431) and (046) planes and the full width at half maximum values are decreased as increased electron irradiation energy. In the atomic force microscope analysis, the surface roughness of as deposited films was 1.70 nm, while the films electron irradiated at 700 eV, show a lower roughness of 1.28 nm. In this study, the figure of merit (FOM) of as deposited films is 2.07 × 10^-3 Ω^-1, while the films electron irradiated at 700 eV show the higher FOM value of 5.53 × 10^-3 Ω^-1. Thus, it is concluded that the post-deposition electron beam irradiation is the one of effective methods to enhance optical and electrical performance of IWO thin films.

• 한국신재생에너지학회:학술대회논문집
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• 한국신재생에너지학회 2005년도 제17회 워크샵 및 추계학술대회
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• pp.561-566
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• 2005

Polycrystalline silicon films were deposited using hot wire CVD (HWCVD). The deposition of silicon thin films was approached by the theory of charged clusters (TCC). The TCC states that thin films grow by self-assembly of charged clusters or nanoparticles that have nucleated in the gas phase during the normal thin film process. Negatively charged clusters of a few nanometer in size were captured on a transmission electron microscopy (TEM) grid and observed by TEM. The negatively charged clusters are believed to have been generated by ion-induced nucleation on negative ions, which are produced by negative surface ionization on a tungsten hot wire. The electric current on the substrate carried by the negatively charged clusters during deposition was measured to be approximately $-2{\mu}A/cm^2$. Silicon thin films were deposited at different $SiH_4$ and $H_2$ gas mixtures and filament temperatures. The crystalline volume fraction, grain size and the growth rate of the films were measured by Raman spectroscopy, X-ray diffraction and scanning electron microscopy. The deposit ion behavior of the si1icon thin films was related to properties of the charged clusters, which were in turn controlled by the process conditions. In order to verify the effect of the charged clusters on the growth behavior, three different electric biases of -200 V, 0 V and +25 V were applied to the substrate during the process, The deposition rate at an applied bias of +25 V was greater than that at 0 V and -200 V, which means that the si1icon film deposition was the result of the deposit ion of charged clusters generated in the gas phase. The working pressures had a large effect on the growth rate dependency on the bias appled to the substrate, which indicates that pressure affects the charging ratio of neutral to negatively charged clusters. These results suggest that polycrystalline silicon thin films with high crystalline volume fraction and large grain size can be produced by control1ing the behavior of the charged clusters generated in the gas phase of a normal HWCVD reactor.

• 대한치과의사협회지
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• 제53권9호
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• pp.644-655
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• 2015

Purpose: This study was conducted to evaluate the effect of the fixture abutment connection type and diameter on the screw joint stability in external butt joint for 2nd surgery and internal cone connected type implant system for 1st and 2nd surgery using ultimate fracture strength. Materials and Methods: USII system, SSII system and GSII system of Osstem Implant were used. Each system used the fixture with two different diameters and cement-retained abutments, and tungsten carbide / carbon coated abutment screws were used. Disc shaped stainless steel metal tube was attached using resin-based temporary cement. The experimental group was divided into seven subgroups, including the platform switching shaped specimen that uses a regular abutment in the fixture with a wide diameter in USII system. A static load was increased to the metal tube at 5mm deviated point from the implant central axis until it reached the compression bending strength at a rate of 1mm/min. Then the deformations and patterns of fracture in threaded connection were compared. Results and Conclusion: 1. In the comparison between the Regular diameter, compression bending strength of SSII system was higher than USII system and GSII system. There was no significant difference between USII system and GSII system. 2. In the comparison between wide diameter, compression bending strength was increased in the order of GSII system, USII system, and SSII system. 3. In comparison between the implant diameter, compression bending strength of the wide diameter was greater than the regular diameter in any system(P<0.05). 4. There was no significant difference between the platform switching (III group) and the regular diameter (I group) in USII system. 5. In USII system, fracture of abutment screw and deformation of both fixture and abutment were observed in I, II and III subgroups. 6. Failure pattern of SSII system, which was the fracture of abutment screw and deformation of the abutment and fixture, was observed in both IV and V subgroups. Fracture of some fixtures was observed in subgroup V. 7. Failure pattern of GSII system, which was the fracture of the abutment screw and deformation of the fixture and the abutment, was observed in both VI and VII subgroups. Apart from other subgroups, subgroup VII demonstrated no bending neither the fracture at the top of the fixture. The compressive deformation of internal slope in the fixture was the only thing observed in subgroup VII.

• Nuclear Engineering and Technology
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• 제52권12호
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• pp.2860-2866
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• 2020

Oxide dispersion-strengthened materials W-1wt%Pr₂O₃ and W-1wt%La₂O₃ were synthesized by wet chemical method and spark plasma sintering. The field emission scanning electron microscopy (FE-SEM) analysis, XRD and Vickers microhardness measurements were conducted to characterize the samples. The irradiations were carried out with a 5 keV helium ion beam to fluences up to 5.0 × 10²¹ ions/m² under 600 ℃ using the low-energy ion irradiation system. Transmission electron microscopy (TEM) study was performed to investigate the microstructural evolution in W-1wt%Pr₂O₃ and W-1wt%La₂O₃. At 1.0 × 10²⁰ He⁺/m², the average loops size of the W-1wt%Pr₂O₃ was 4.3 nm, much lower than W-1wt% La₂O₃ of 8.5 nm. However, helium bubbles were not observed throughout in both doped W materials. The effects of pre-irradiation with 1.0 × 10²¹ He⁺/m² on trapping of injected deuterium in doped W was studied by thermal desorption spectrometry (TDS) technique using quadrupole mass spectrometer. Compared with the samples without He⁺ pre-irradiation, deuterium (D) retention of doped W materials increased after He⁺ irradiation, whose retention was unsaturated at the damage level of 1.0 × 10²²D₂⁺/m². The present results implied that irradiation effect of He⁺ ions must be taken into account to evaluate the deuterium retention in fusion material applications.

• 대한치과보철학회지
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• 제50권2호
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• pp.106-111
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• 2012

연구 목적: 본 연구는 탄성의치 제작 시 주로 사용되는 polyamide를 수종의 연마방법을 사용하여 처리 후 $Candida$ $albicans$의 부착정도와 표면거칠기를 비교하고자 하였다. 연구 재료 및 방법: $25{\times}15{\times}2mm$ 크기의 polyamide 시편을 4군으로 나누어 연마재를 사용하여 기공용 lathe 연마하는 방법(기공실내 연마방법)과 각기 다른 2종의 실리콘 포인트로 진료실내 연마하는 방법, 그리고 실리콘포인트 연마 후 pumice로 연마하는 방법으로 처리하였다. $C.$ $albicans$의 부착성을 평가하기 위해 $5{\times}10^6CFU/ml$의 $C.$ $albicans$ 현탁액에 시편을 2시간 동안 침적하였고 5회 수세처리 후 한천배지에서 배양하였다. 그리고 주사전자 현미경(JSM-5900, JEOL LTd., Tokyo, Japan) 촬영을 시행하였다. Profilometer (Surf-pak; Kawasaki, Japan)를 이용하여 표면거칠기를 측정하였고 통계처리를 위하여 SPSS 18.0 프로그램을 사용하였다. 일원변량분석으로 비교 분석하였고 사후 검증은 $C.$ $albicans$의 부착성 검증을 위해 Scheffe test를 시행하였으며 표면조도검증을 위해 Tamhane's T2 test를 시행하였다(${\alpha}$=.01). 결과: 최대 거칠기 값을 보인 군은 2단계의 연마용 버를 사용한 것으로 $0.32{\mu}m{\pm}0.10$ 값을 나타냈으며, 가장 낮은 거칠기 값을 보인 것은 tungsten carbide를 사용하지 않고 기공용 lathe로만 연마를 한 군으로 $0.02{\mu}m{\pm}0.00$의 거칠기 값을 나타냈다. $C.$ $albicans$ 부착 실험에서는 기공용 lathe만을 이용한 연마방법이 가장 적은 부착수를 보였으며 다른 세 군과 유의한 차이가 발견되었다($P$<.01). 결론: 표면거칠기 및 미생물 부착능 실험 결과 기공실 연마만을 시행한 경우 유의하게 낮은 거칠기 값과 부착율을 보였다. Pumice로 추가 연마한 군은 진료실연마를 시행한 군에 비해 낮은 거칠기 값을 보였으나 $C.$ $albicans$ 부착에 있어서는 유의한 차이를 보이지 않았다($P$>.01).

• 센서학회지
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• 제29권1호
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• pp.14-18
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• 2020

This study investigates the nitrogen dioxide (NO₂) sensing characteristics of an Si MOSFET gas sensor with a tungsten trioxide (WO₃) sensing layer deposited using the sputtering method. The Si MOSFET gas sensor consists of a horizontal floating gate (FG) interdigitated with a control gate (CG). The WO₃ sensing layer is deposited on the interdigitated CG-FG of a field effect transistor(FET)-type gas sensor platform. The sensing layer is deposited with different thicknesses of the film ranging from 100 nm to 1 ㎛ by changing the deposition times during the sputtering process. The sensing characteristics of the fabricated gas sensor are measured at different NO₂ concentrations and operating temperatures. The response of the gas sensor increases as the NO₂ concentration and operating temperature increase. However, the gas sensor has an optimal performance at 180℃ considering both response and recovery speed. The response of the gas sensor increases significantly from 24% to 138% as the thickness of the sensing layer increases from 100 nm to 1 ㎛. The sputtered WO₃ film consists of a dense part and a porous part. As reported in previous work, the area of the porous part of the film increases as the thickness of the film increases. This increased porous part promotes the reaction of the sensing layer with the NO₂ gas. Consequently, the response of the gas sensor increases as the thickness of the sputtered WO₃ film increases.

• 한국안전학회지
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• 제32권2호
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• pp.34-37
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• 2017

In recent emerging industry, Display field becomes bigger and bigger, and also semiconductor technology becomes high density integration. In Flat Panel Display, there is an issue that electrostatic phenomenon results in fine dust adsorption as electrostatic capacity increases due to bigger size. Destruction of high integrated circuit and pattern deterioration occur in semiconductor and this causes the problem of weakening of thermal resistance. In order to solve this sort of electrostatic failure in this process, Soft X-ray ionizer is mainly used. Soft X-ray Ionizer does not only generate electrical noise and minute particle but also is efficient to remove electrostatic as it has a wide range of ionization. X-ray Generating efficiency has an effect on soft X-ray Ionizer affects neutralizing performance. There exist variable factors such as type of anode, thickness, tube voltage etc., and it takes a lot of time and financial resource to find optimal performance by manufacturing with actual X-ray tube source. MCNPX (Monte Carlo N-Particle Extended) is used for simulation to solve this kind of problem, and optimum efficiency of X-ray generation is anticipated. In this study, X-ray generation efficiency was measured according to target material thickness using MCNPX under the conditions that tube voltage is 5 keV, 10 keV, 15 keV and the target Material is Tungsten(W), Gold(Au), Silver(Ag). At the result, Gold(Au) shows optimum efficiency. In Tube voltage 5 keV, optimal target thickness is $0.05{\mu}m$ and Largest energy of Light flux appears $2.22{\times}10^8$ x-ray flux. In Tube voltage 10 keV, optimal target Thickness is $0.18{\mu}m$ and Largest energy of Light flux appears $1.97{\times}10^9$ x-ray flux. In Tube voltage 15 keV, optimal target Thickness is $0.29{\mu}m$ and Largest energy of Light flux appears $4.59{\times}10^9$ x-ray flux.

• Applied Science and Convergence Technology
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• 제26권5호
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• pp.118-128
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• 2017

The scope of this work is to determine and compare the effect of electron temperature ($T_e$) and number density ($N_e$) on the yield rate and concentration of reactive chemical species ($^{\bullet}OH$, $H_2O_2$ and $O_3$) in an argon, air and oxygen injected negative DC (0-4 kV) capillary discharge with water flow(0.1 L/min). The discharge was created between tungsten pin-to pin electrodes (${\Phi}=0.5mm$) separated by a variable distance (1-2 mm) in a quartz capillary tube (2 mm inner diameter, 4 mm outer diameter), with various gas injection rates (100-800 sccm). Optical emission spectroscopy (OES) of the hydrogen Balmer lines was carried out to investigate the line shapes and intensities as functions of the discharge parameters such as the type of gas, gas injection rate and inter electrode gap distances. The intensity ratio method was used to calculate $T_e$ and Stark broadening of Balmer ${\beta}$ lines was adopted to determine $N_e$. The effects of $T_e$ and $N_e$ on the reactive chemical species formation were evaluated and presented. The enhancement in yield rate of reactive chemical species was revealed at the higher electron temperature, higher gas injection rates, higher discharge power and larger inter-electrode gap. The discharge with oxygen injection was the most effective one for increasing the reactive chemical species concentration. The formation of reactive chemical species was shown more directly related to $T_e$ than $N_e$ in a flowing water gas injected negative DC capillary discharge.