• Proceedings of the KIEE Conference
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• 1988.11a
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• pp.164-167
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• 1988

This paper reports optical properties and hole formation of a 488nm-optimumed trilayer structure utiluzed Te-based thin films as a recording layer, and the application of trilayer to 830nm. The optical recording characteristics of metallic recording media are enhanced significantly by incoporating the metal (Al) layer into an antireflection trilayer structure. Due to the interference condition inherent in the design of the trilayer structure, reflectance from holes is ranked a low fraction. the hole formation is carried out by laser by $Ar^+$ laser(488nm). For 20nsec laser pulse duration, the hole opening threshold power of $(Te_{86}Se_{14})_{50}Bi_{50}$ trilayer is lower than that of monolayor that used in this experiments. Hole shapes of the whole sample were clean. For the application of the diode laser, the thickness of dielectric is varied by$\lambda$/4n. In order to compare the monolayer with the trilayer reflectance was measured.

• Proceeding of EDISON Challenge
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• 2015.03a
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• pp.408-411
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• 2015

Trilayer graphene에 비활성기체 중 하나인 Ne 원자가 어떤 영향을 미치는지에 대해 density functional theory calculation을 이용해서 연구하였다. ABA stacked trilayer graphene의 $4{\times}4$ super cell에서 top surface에 adsorption되는 경우와 trilayer 내부에 intercalation 되는 경우에 대하여 energy를 계산하여 Ne 원자들의 안정한 위치를 찾았다. Adsorption의 경우 hollow site가 가장 안정하였고 intercalation의 경우에도 top layer의 hollow site의 아래가 가장 안정하였다. 또한 Ne 원자 2개가 adsorption되는 경우의 adsorption energy를 통하여 Ne 원자들 사이의 상호작용을 예측하였다.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.24 no.1
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• pp.1-6
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• 2011

Optical gain characteristics of $1.3{\mu}m$ type-II GaAsSb/InGaNAs/GaAs trilayer quantum well structures were studied using multi-band effective mass theory. The results were compared with those of $1.3{\mu}m$ GaAsSb/InGaNAs/GaAs trilayer quantum well structures. In the case of $1.3{\mu}m$ GaAsSb/InGaNAs/GaAs trilayer quantum well structure, the energy difference between the first two subbands in the valence band is smaller than that of $1.3{\mu}m$ GaAsSb/InGaNAs/GaAs trilayer quantum well structure. Also, $1.3{\mu}m$ GaAsSb/InGaNAs/GaAs trilayer quantum well structure shows larger optical gain than $1.3{\mu}m$ GaAsSb/InGaNAs/GaAs trilayer quantum well structure. This means that GaAsSb/InGaNAs/GaAs system is promising as long-wavelength optoelectronic devices for optical communication.

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.192.1-192.1
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• 2014

We report solution-processed organic trilayer solar cells consisting of poly (3-hexylthiophene) (P3HT), a conjugated polyelectrolyte (CPE) and [6,6]-phenyl-C61-butyric acid methyl ester (PCBM), wherein the effect CPE layer thickness on device properties was investigated. The current-voltage characteristics under illumination and dark as well as photoluminescence were characterized using various concentrations (0.02, 0.1, and 0.3wt%) of to deposit the CPE interlayer between the donor and acceptor layers. We also investigated the influence of molecular dipole moments in the trilayer solar cells by external stimuli. These results provide an experimental approach for investigating the influence of interfacial dipoles on solar cell parameters when placed between the donor and acceptor and allow us to obtaining fundamental information about the donor/acceptor interface in organic solar cells.

• Journal of Magnetics
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• v.19 no.2
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• pp.151-154
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• 2014

Recent years have seen an increasing range of planar Hall resistive (PHR) sensor applications in the field of magnetic sensing. This study describes a new application of the PHR sensor to monitor a current. Initially, thermal drift experiments of the PHR sensor are performed, to determine the accuracy of the PHR signal output. The results of the thermal drift experiments show that there is no considerable drift in the signals attained from 0.1, 0.5, 1 and 2 mA current. Consequently, the PHR sensor provides adequate accuracy of the signal output, to perform the current monitoring experiments. The performances of the PHR sensor with bilayer and trilayer structures are then tested. The minimum detectable currents of the PHR sensor using bilayer and trilayer structures are $0.51{\mu}A$ and 54 nA, respectively. Therefore, the PHR sensor having trilayer structure is the better choice to detect ultra low current of few tens nanoampere.

• Journal of the Korean Institute of Telematics and Electronics A
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• v.31A no.10
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• pp.101-107
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• 1994

The PMMA/Ge/AZ trilayer resist decreased proximity effect of backscattering electrons and corrected pattern distoration in order to from deep submicron patterns. In the experiment, the prosiemity effect is decreased by 11% and 30% for the case of 0.9$\mu$m and 1.7$\mu$m AZ, respectively, in trilayer resist compared to monolyer resist. also, the EID of 240$\AA$ Ge film is smaller than that of 500$\AA$ film by 365. 0.1$\mu$m line/space was formed in the 2000$\AA$ PMMA layer with the condition of dose 330${\mu}C/cm^{2}$ and of 150sec of develop time in MIBK : IPA (1:3) developer.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1988.05a
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• pp.74-77
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• 1988

This paper reports the properties of antireflection structure and hole formation of Te-based systems. The optical-recording characteristics of metallic recording media are enhanced significantly by incorporating the metal(Al) layer into an antreflection trilayer structure. Due to the interface condition inherent in the design of the trilayer structure, reflectivity from holes is ranked low fraction (<10%). The hole formation is carried by $Ar^+$ Laser(488nm). For 20nsec pulse duration, hole opening power(threschold) of $(Te_{86}Se_{14})_{50}Bi_{50}$ trilayer is lower than that of monolayer that used in this experiment. Hole shapes of the whole sample were clean.

• Proceedings of the Materials Research Society of Korea Conference
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• 2012.05a
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• pp.110.2-110.2
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• 2012

We reported on antireflective ZnSnO (ZTO)/Ag bilayer and ZTO/Ag/ZTO trilayer source/drain (S/D) electrodes for all-transparent ZTO channel based thin film transistors (TFTs). The ZTO/Ag bilayer is more transparent (83.71%) and effective source/drain (S/D) electrodes for the ZTO channel/Al2O3 gate dielectric/ITO gate electrode/glass structure than ZTO/Ag/ZTO trilayer because the bottom ZTO layer in the trilayer increasea contact resistance between S/D electrodes and ZTO channel layer and reduce the antireflection effect. The ZTO based all-transparent TFTs with ZTO/Ag bilayer S/D electrode showed a saturation mobility of 4.54cm2/Vs and switching property (1.31V/decade) comparable to TTFT with Ag S/D electrodes.

• Journal of Magnetics
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• v.10 no.3
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• pp.99-102
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• 2005

Modification in exchange bias of a NiFe/FeMn/NiFe trilayer, on introduction of a nonmagnetic Al layer at the top FeMn/NiFe interface, is investigated in multilayers prepared by rf magnetron sputtering. The introduction of Al layer leads to vanishing of bias of the top NiFe layer. But the bias for the bottom NiFe layer increases steadily with increasing Al layer thickness and attains bias (230 Oe) which is greater than that of the trilayer without the Al layer (150 Oe). When the top NiFe layer thickness is varied, exchange bias has highest value at 12 nm thickness for 1 nm thicknes of Al layer. Ion beam etching of the top NiFe layer also leads to an enhancement in bias for the bottom NiFe layer.

• Journal of the Korean Magnetics Society
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• v.12 no.4
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• pp.132-136
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• 2002

Enhancement of crystallinity and exchange bias characteristics for NiFe/FeMn/NiFe trilayer with Si buffer layer fabricated by ion-beam deposition were examined. A Si buffer layer promoted (111) texture of fcc crystallities in the initial growth region of NiFe layer deposited on it. FeMn layers deposited on Si/NiFe bilayer exhibited excellent (111) crystal texture. The antiferromagnetic FeMn layer between top and bottom NiFe films with the buffer Si 50 ${\AA}$-thick induced a large exchange coupling field Hex with a different dependence. It was found that H$\sub$ex/ of the bottom and top NiFe films with Si buffer layer revealed large value of about 110 Oe and 300 Oe, respectively. In the comparison of two Ta and Si buffer layers, the NiFe/FeMn/NiFe trilayer with Si could possess larger exchange coupling field and higher crystallinity.