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http://dx.doi.org/10.4283/JMAG.2005.10.3.099

Exchange Bias Modifications in NiFe/FeMn/NiFe Trilayer by a Nonmagnetic Interlayer  

Yoon, S.M. (Department of Materials Engineering, Chungnam National University)
Sankaranarayanan V.K. (Department of Materials Engineering, Chungnam National University, Microstructure Devices Group, Electronic Materials Division, National Physical Laboratory)
Kim, C.O. (Department of Materials Engineering, Chungnam National University)
Kim, C.G. (Department of Materials Engineering, Chungnam National University)
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Abstract
Modification in exchange bias of a NiFe/FeMn/NiFe trilayer, on introduction of a nonmagnetic Al layer at the top FeMn/NiFe interface, is investigated in multilayers prepared by rf magnetron sputtering. The introduction of Al layer leads to vanishing of bias of the top NiFe layer. But the bias for the bottom NiFe layer increases steadily with increasing Al layer thickness and attains bias (230 Oe) which is greater than that of the trilayer without the Al layer (150 Oe). When the top NiFe layer thickness is varied, exchange bias has highest value at 12 nm thickness for 1 nm thicknes of Al layer. Ion beam etching of the top NiFe layer also leads to an enhancement in bias for the bottom NiFe layer.
Keywords
Exchange coupling; Ion implantation; Multilayers; Spin-valve;
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