• 한국기계가공학회지
• /
• 제15권2호
• /
• pp.31-37
• /
• 2016

In the steam system, a stream trap valve discharges a condensate and a non-condensable gas. It also prevents stream from being leaked. The free float stream trap valve is a mechanical type of stream trap. The valve is opened when a hallow ball is floated due to the density of the condensate through the condensate flows into the valve. On the other hand, when the flow of the condensate is completed, the valve is closed as the float subsides due to the weight of the structure and the stream is blocked. In addition, the bimetal lifts the hallow ball, which discharges the non-condensable gas. In this study, the performance of the properties of the free float stream trap valve, the method of support for three points, and the orifice design are researched. Moreover, the condensate discharge capacity of the free float stream trap valve is calculated from the experiment.

• 수산경영론집
• /
• 제50권1호
• /
• pp.1-15
• /
• 2019

Offshore trap fishery managers have payed in advance to attract excellent fishing crew in the minium grantee lay system. This practice can intensify competition among fishery management bodies and increase the burden of fishery manager about income tax and four social insurance programs. The purpose of this study is to identify the problems of advance payment practice in terms of fishery manager in offshore trap fishery. The main results of this study are as follows. First, under the TYPE 1 model, which is the current wage payment manner, there is a risk that fishery manager will not able to return the prepayment paid in advance when the income of fishery management bodies decrease. Second, the TYPE 2 or the TYPE 3 model which reduces or abolishes advance payment can alleviate the burden of fishery manager relative to the deduction of redemption amount, incentive to induce artificial expenses, income tax and four social insurance programs. In conclusion, advance payment practice in offshore trap fishery is placing a heavy burden on the fishery manager. In order to solve these problems in the future, we need to find solutions through similar case studies.

• 한국전기전자재료학회논문지
• /
• 제24권11호
• /
• pp.900-904
• /
• 2011

In this paper, we investigated an anomalous hump phenomenon under the positive bias stress in p-type LTPS TFTs. The devices with inferior electrical performance also show larger hump phenomenon. which can be explained by the sub-channel induced from trapped electrons under thinner gate oxide region. We can confirm that the devices with larger hump have larger interface trap density ($D_{it}$) and grain boundary trap density ($N_{trap}$) extracted by low-high frequency capacitance method and Levinson-Proano method, respectively. From the C-V with I-V transfer characteristics, the trapped electrons causing hump seem to be generated particularly from the S/D and gate overlapped region. Based on these analysis, the major cause of an anomalous hump phenomenon under the positive bias stress in p-type poly-Si TFTs is explained by the GIDL occurring in the S/D and gate overlapped region and the traps existing in the channel edge region where the gate oxide becomes thinner, which can be inferred by the fact that the magnitude of the hump is dependent on the average trap densities.

• 한국전기전자재료학회:학술대회논문집
• /
• 한국전기전자재료학회 2006년도 추계학술대회 논문집 Vol.19
• /
• pp.81-82
• /
• 2006

SOI(Silicon-On-Insulator) MOSFET의 전기적 특성에 미치는 게이트 산화막과 계면준위 밀도의 관계를 조사하였다. 결함이 발생하지 않는 얕은 소스/드레인 접합을 형성하기 위하여 급속열처리를 이용한 고상확산방법으로 제작한 SOI MOSFET 소자는 급속열처리 과정에서 계면준위가 증가하여 소자의 특성이 열화된다. 이를 개선하기 위하여 $H_2/N_2$ 분위기에서 후속 열처리 공정을 함으로써 소자의 특성이 향상됨을 볼 수 있었다. 이와같이 급속열처리 공정과 $H_2/H_2$ 분위기에서의 후속 열처리 공정이 소자 특성에 미치는 영향을 분석하기 위하여 소자 시뮬레이션을 이용하여 게이트 산화막과 채널 사이의 계면준위 밀도를 분석하였다. 그 결과, n-MOSFET의 경우에는 acceptor-type trap, p-MOSFET의 경우에는 donor-type trap density가 소자특성에 큰 영향을 미치는 것을 확인하였다.

• 한국식물병리학회지
• /
• 제3권2호
• /
• pp.120-123
• /
• 1987

자연상태하에서 잎도열병 병반으로부터 포자의 량을 측정하기 위하여 4종의 포자탐집기(금의 원형, 금의 개량형, 길야의 원형, 금$\cdot$길야의 개량형)를 검토한 결과, 원골한 포자형성 및 이탈, 포자채집, 검경에 있어서 한 두가지의 결점이 발견되었다. 따라서 위의 결점을 보완할 수 있는 새로운 포자채집기를 고찰, 성능을 검토하여 상기 4종의 채집기의 결점을 보충할 수 있는 결과를 얻었으므로 금후 자연상태하에서 포자이탈량 조사에 유용할 것으로 생각된다.

• 한국전기전자재료학회논문지
• /
• 제21권4호
• /
• pp.300-304
• /
• 2008

A novel characterization method was investigated to estimate the trap generation during the program /erase cycles in nand flash memory cell. Utilizing Fowler-Nordheim tunneling current, floating gate potential and oxide electric field, we established a quantitative model which allows the knowledge of threshold voltage (Vth) as a function of either program or erase operation time. Based on our model, the derived results proved that interface trap density (Nit) term is only included in the program operation equation, while both Nit and oxide trap density (Not) term are included in the erase operation equation. The effectiveness of our model was tested using 50 nm nand flash memory cell with floating gate type. Nit and Not were extracted through the analysis of Program/Erase speed with respect to the endurance cycle. Trap generation and cycle numbers showed the power dependency. Finally, with the measurement of the experiment concerning the variation of cell Vth with respect to program/erase cycles, we obtained the novel quantitative model which shows similar results of relationship between experimental values and extracted ones.

• 센서학회지
• /
• 제31권4호
• /
• pp.271-277
• /
• 2022

We analyzed the effects of the interface trap on the output characteristics of an inversion mode n-channel GaN Schottky barrier (SB)-MOSFET based on the N_it distribution using TCAD simulation. As interface trap number density (N_it) increased, the threshold voltage increased while the drain current density decreased. Under N_it=5.0×10¹⁰ cm^-2 condition, the threshold voltage was 3.2 V for V_DS=1 V, and the drain current density reduced to 2.4 mA/mm relative to the non-trap condition. Regardless of the N_it distribution type, there was an increase in the subthreshold swing (SS) following an increase in N_it. Under U-shaped N_it distribution, it was confirmed that the SS varied depending on the gate voltage. The interface fixed charge (Q_f) caused an shift in the threshold voltage and increased the off-state current collectively with the surface trap. In summary, GaN SB-MOSFET can be a building block for high power UV optoelectronic circuit provided the surface state is significantly reduced.

• BMB Reports
• /
• 제48권7호
• /
• pp.388-394
• /
• 2015

The brain is an organ that consists of various cell types. As our knowledge of the structure and function of the brain progresses, cell type-specific research is gaining importance. Together with advances in sequencing technology and bioinformatics, cell type-specific transcriptome studies are providing important insights into brain cell function. In this review, we discuss 3 different cell type-specific transcriptome analyses i.e., Laser Capture Microdissection (LCM), Translating Ribosome Affinity Purification (TRAP)/RiboTag, and single cell RNA-Seq, that are widely used in the field of neuroscience. [BMB Reports 2015; 48(7): 388-394]

• 분석과학
• /
• 제24권6호
• /
• pp.421-428
• /
• 2011

본 연구에서는 시료상층부 원판 형태 흡탈착 추출법(HS-MMSE)을 개발하여 검증하고 바닐라 향수의 휘발성 아로마 성분들의 기체 크로마토그래피-질량 분석법에 적용하였다. HS-MMSE 방법은 실리카에 octadecyl silane (ODS)과 활성탄을 결합하여 만든 단일 다공성 물질(monolithic material, MonoTrap)을 흡착제로 이용한다. MonoTrap은 시료상층부에서 아로마 성분들을 흡착하고 100 ${\mu}L$ 소량의 용매로 추출한다. HS-MMSE를 이용하여 바닐라 향수로부터 12개의 성분들을 성공적으로 분석하였다. 그 중 benzyl acetate, linalyl acetate, vanillin, ethyl vanillin을 이용하여 추출 효율에 영향을 주는 파라미터들에 대한 실험을 통해 추출 조건을 최적화하였다. 또한, 대상 물질들에 대한 분석 방법의 검증 실험을 진행하였다. 그 결과, 검출한계, 정량한계는 각각 8.35~13.76 ng, 27.82~45.88 ng 범위였고 $r^2$값이 0.9888 이상인 우수한 직선성과 양호한 회수율 및 재현성을 얻었다. 이러한 결과들을 바탕으로 원판 형태 MonoTrap을 이용한 HS-MMSE 방법은 바닐라 향수의 휘발성 아로마 성분들을 분석하는데 효과적인 방법임을 확인하였다.

• 전자공학회논문지A
• /
• 제29A권8호
• /
• pp.56-62
• /
• 1992

This paper is analyzed the charge trapping and electrical properties of 0(Oxide), NO(Nitrided oxide) and ONO(Reoxidized nitrided oxide) as dielectric films in MIS structures. We have processed bottom oxide and top oxide by the thermal method, and nitride(Si$_{3}N_{4}$) by the LPCVD(Low Pressure Chemical Vapor Deposition) method on P-type(100) Silicon wafer. We have studied the charge trapping properties of the dielectrics by using a computer controlled DLTS system. All of the dielectric films are shown peak nearly at 300K. Those are bulk traps. Many trap densities which is detected in NO films, but traps. Many trap densities which is detected in NO films. Varing the nitride thickness, the trap densities of thinner nitride is decreased than the thicker nitride. Finally we have found that trap densities of ONO films is affected by nitride thickness.