• 한국광학회지
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• 제10권6호
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• pp.448-452
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• 1999

가우스 함수 형태인 진폭임펄스 초기 함수 $e^{-\sigma^2\chi^2}$를 역푸리에 변환하여 변조된 가우스 동함수 $e^{\frac-{\omega^2}{4\sigma^2}$를 구하였다. 굴절률이 같은 흡수유리와 투명유리를 조합한 가우스 진폭변조판에 적용되는 설계이론을 유도하고 설계에 따라 가우스 진폭변조판을 제작하였다. 가우스 진폭변조판은 포물선 방정식형태로 제작하여 투과율을 측정한 뒤 설계이론에 따라 구한 값과 비교하였다. 파장이 $0.365{\mu}m$이고, 수치구경수(NA)가 0.07인 광학계에서 가우스 진폭변조판이 있을 때와 없을 때에 폭이 $60{\mu}m$인 단일 슬릿과 $25{\mu}m$인 단일 슬릿의 각각의 경우에 대해 회절 선폭을 비교하여 가우스 진폭변조판에 의해서 선폭이 2/3로 감소함을 확인하였다.

• 한국안광학회지
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• 제1권2호
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• pp.7-11
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• 1996

동공반사에 의한 동공크기 변화는 luminance 량에 의해 결정되며, 동공크기에 따른 외부 광량의 투과량인 망막조도비 분포함수와 luminance 량에 따른 추체, 간체의 수용체 분포함수에 의존한다. Luminance 에 대한 동공크기 변화는 다음과 같은 수식적 모델로 표현 할 수 있다. $$y(x)={\alpha}+{\beta}\frac{1}{1+{e}{x}{p}(x-x_0)/{\theta}}$$ 여기서 ${\alpha}$는 luminance의 최대값에서 동공직경 크기이고, ${\beta}$는 동공직경 최대, 최소 편차, ${\theta}$는 개인차의 민감도를 나타내는 parameter이다. P.Moon등의 실험값과 비교해 보면 이모델식이 잘 일시함을 알 수 있다.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2010년도 제39회 하계학술대회 초록집
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• pp.309-309
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• 2010

We have investigated the effect of $H_2$ plasma treatment on the BZO (ZnO:B, Boron doped ZnO) thin films. The BZO thin films are prepared by LP-MOCVD (Low Pressure Metal Organic Chemical Vapor Deposition) technique and the samples of BZO thin film are performed with $H_2$ plasma treatment by plasma treatment system with 13.56 MHz as RIE (Reactive Ion Etching) type. After exposing $H_2$ plasma treatment, measurement of transmittance, reflectance and haze spectra in 300~1100 nm, electrical properties as resistivity, mobility and carrier concentration and work function was analysed. Regarding the results of the $H_2$ plasma treatment on the BZO thin films are application to the TCO for solar cells, such as the a-Si thin films solar cell.

• 설비공학논문집
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• 제17권2호
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• pp.191-199
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• 2005

Double pane window system, in which an air layer with a finite width is filled between glasses, is used in order to increase the insulation efficiency. In the present study, a conjugate heat transfer problem of a double pane window system has been studied numerically in order to investigate the effect of an air layer on the heat transmittance of the double pane window system using a finite element method based on P2P1 basis function. In this study on the conjugate heat transfer of a double pane window system, numerically predicted Nusselt numbers with or without conjugate heat transfer effect have been compared with an available existing empirical formula. It has been found that a Nusselt number from an existing formula for an enclosed space is different from that obtained from the present conjugate heat transfer analysis mainly due to the effects of a very high aspect ratio and conjugate heat transfer mechanism. Furthermore, it has been shown that the numerically estimated optimal air thickness of the double pane window system with conjugate heat transfer effect is a little bit longer than that obtained without considering conjugate heat transfer effect.

• 한국표면공학회지
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• 제43권4호
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• pp.194-198
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• 2010

Indium doped zinc oxide films (ZIO) were deposited on non-alkali glass substrates by radio frequency (RF) magnetron sputtering at room temperature. The structural, electrical and optical properties of the ZIO films were investigated as a function of their $In_2O_3$ content (3.33-15.22 wt%). The ZIO films deposited with an $In_2O_3$ content of 9.54 wt% showed a relatively low resistivity of $9.13{\times}10^{-4}{\Omega}cm$ and a highly c-axis preferred orientation. The grain size and FWHM were mainly affected by the $In_2O_3$ content. The crystallinity and resistivity were enhanced with increasing grain size. The average transmittance of the ZIO films was over 85% in the visible region and their band gap varied from 3.22 to 3.66 eV depending on their doping ratio.

• Bulletin of the Korean Chemical Society
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• 제32권3호
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• pp.847-851
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• 2011

This study examined In-Zn-Sn-O (IZTO) films deposited on glass substrates by pulsed DC magnetron sputtering with various substrate temperatures. The structural, electrical, optical properties were analyzed. Xray diffraction showed that the IZTO films prepared at temperatures > $150^{\circ}C$ were crystalline which adversely affected the electrical properties. Amorphous IZTO films prepared at $100^{\circ}C$ showed the best properties, such as a low resistivity, high transmittance, figure of merit, and high work function of $4.07{\times}10^{-4}\;{\Omega}$, 85%, $10.57{\times}10^{-3}\;{\Omega}^{-1}$, and 5.37 eV, respectively. This suggests that amorphous IZTO films deposited at relatively low substrate temperatures ($100^{\circ}C$) are suitable for electrode applications, such as OLEDs as a substitute for conventional crystallized ITO films.

• 한국전기전자재료학회논문지
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• 제29권12호
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• pp.841-846
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• 2016

ZnO nanorods were grown on $SiO_2$ coated Si wafers and glass by the hydrothermal method. The structural and optical properties variation of ZnO nanorods as a function of growing time was studied. ~10 nm-thick ZnO thin films deposited on substrates by rf magnetron sputtering were employed as seed layers. Zinc nitrate hexahydrate (0.05 M) and hexamethylenetetramine (0.05 M) mixed in DI water were used as a reaction solution. ZnO nanorods were respectively grown for 30 min, 1 h, 2 h, 3 h, and 4 h by maintaining the reactor at $90^{\circ}C$. Crystallinity of ZnO nanorods was analyzed by X-ray diffraction, and the morphology of nanorods was observed by a field emission scanning electron microscope. Transmittance and absorbance were measured by a UV-Vis spectrophotometer, and energy band gap and urbach energy were obtained from the data. Photoluminescence measurements were carried out using Nd-Yag laser (266 nm).

• 한국전기전자재료학회논문지
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• 제26권1호
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• pp.56-63
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• 2013

IGZO thin films have been prepared by RF magnetron sputtering. The structural, electrical and optical properties of the IGZO thin films have been investigated as a function of deposition condition. XRD analysis of IGZO thin films showed a typical crystallographic orientation with c-axis perpendicular regardless of deposition conditions. The carrier mobility, carrier concentration and resistivity of the IGZO films sputtered at 200 W, 1mTorr and $300^{\circ}C$ were $28.5cm^2/V{\cdot}sec$, $2.6{\times}10^{20}cm^3$, $8.8{\times}10^{-4}{\Omega}{\cdot}cm$ respectively. The optical transmittance were higher than 80% at visible region regardless of the deposition conditions under the experiments above, and specifically higher than 90% at wave length over 500 nm. The absorption edge was shifted to shorter wavelength with increase of carrier concentration.

• 한국전기전자재료학회논문지
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• 제19권5호
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• pp.442-449
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• 2006

Electrical, optical, and structural properties of indium zinc oxide (IZO) films grown by a box cathode sputtering (BCS) were investigated as a function of oxygen flow ratio. A sheet resistance of $42.6{\Omega}/{\Box}$, average transmittance above 88% in visible range, and root mean spare roughness of $2.7{\AA}$ were obtained even in the IZO layers grown at room temperature. In addition, it is shown that electrical characteristics of the top-emitting organic light emitting diodes (TOLEDs) with the BCS grown-IZO top cathode layer is better than that of TOLEDs with DC sputter grown IZO top cathode, due to absence of plasma damage effect. Furthermore the effects of oxygen flow ratio in IZO films are investigated, based on x-ray photoelectron spectroscopy (XPS), ultra violet/visible (UV/VIS) spectro-meter, scanning electron microscopy (SEM), and atomic force microscopy (AFM) analysis results.

• ETRI Journal
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• 제27권4호
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• pp.405-410
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• 2005

High quality indium tin oxide (ITO) thin films were grown by pulse laser deposition (PLD) on flexible polyethersulphone (PES) substrates. The electrical, optical, and surface morphological properties of these films were examined as a function of substrate temperature and oxygen pressure. ITO thin films, deposited by PLD on a PES substrate at room temperature and an oxygen pressure of 15 mTorr, have a low electrical resistivity of $2.9{\times}10^{-4}{\Omega}cm$ and a high optical transmittance of 84 % in the visible range. They were used as the anode in organic light-emitting diodes (OLEDs). The maximum electro luminescence (EL) and current density at 100 $cd/m^2$ were 2500 $cd/m^{2}$ and 2 $mA/m^{2}$, respectively, and the external quantum efficiency of the OLEDs was found to be 2.0 %.