• Korean Journal of Acupuncture
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• v.32 no.4
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• pp.160-168
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• 2015

Objectives : This study was intended to observe the changes in the expression of neurotransmitters, such as nNOS, NO and NE upon the needle insertion at varying depths at the connecting point. Methods : Needles were inserted into rats, on both left and right sides of the connecting point, including the LI6, SI7 and TE5 acupoints which are three yang meridians of the hand. After insertion, needles were retained for five minutes. Each acupuncture groups were treated acupuncture at each acupoint and at the depths of superficial, middle and deep layer. After the retention, blood was drawn via cardiac puncture, and tissues of each point near meridian vessels were extracted to examine the changes in the expression of nNOS, NO and NE. Results : In terms of the effect in nNO production, there was a significant increase only in the middle and deep layer at SI7 acupoint, but there was no significant change in the expression of NO. Regarding the formation of norepinephrine within tissues, the middle layer on LI6 acupoint, the middle layer and the deep layer on TE5 acupoint showed a significant increase, while production of plasma norepinephrine was significantly decreased at the middle layer and the deep layer on LI6 acupoint and the deep layer on SI7 acupoint. Conclusions : The effect of needles applied at the connecting point of three yang meridians on the activities of nNOS, and NE could be observed, and it can be induced that the effect of needle stimulation on disrupted nervous system can be examined through additional researches based on this one.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.08a
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• pp.289-289
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• 2013

While there are plenty of studies on synthesizing semiconducting germanium nanowires (Ge NWs) by vapor-liquid-solid (VLS) process, it is difficult to inject dopants into them with uniform dopants distribution due to vapor-solid (VS) deposition. In particular, as precursors and dopants such as germane ($GeH_4$), phosphine ($PH_3$) or diborane ($B_2H_6$) incorporate through sidewall of nanowire, it is hard to obtain the structural and electrical uniformity of Ge NWs. Moreover, the drastic tapered structure of Ge NWs is observed when it is synthesized at high temperature over $400^{\circ}C$ because of excessive VS deposition. In 2006, Emanuel Tutuc et al. demonstrated Ge NW pn junction using p-type shell as depleted layer. However, it could not be prevented from undesirable VS deposition and it still kept the tapered structures of Ge NWs as a result. Herein, we adopt $C_2H_2$ gas in order to passivate Ge NWs with carbon sheath, which makes the entire Ge NWs uniform at even higher temperature over $450^{\circ}C$. We can also synthesize non-tapered and uniformly doped Ge NWs, restricting incorporation of excess germanium on the surface. The Ge NWs with carbon sheath are grown via VLS process on a $Si/SiO_2$ substrate coated 2 nm Au film. Thin Au film is thermally evaporated on a $Si/SiO_2$ substrate. The NW is grown flowing $GeH_4$, HCl, $C_2H_2$ and PH3 for n-type, $B_2H_6$ for p-type at a total pressure of 15 Torr and temperatures of $480{\sim}500^{\circ}C$. Scanning electron microscopy (SEM) reveals clear surface of the Ge NWs synthesized at $500^{\circ}C$. Raman spectroscopy peaked at about ~300 $cm^{-1}$ indicates it is comprised of single crystalline germanium in the core of Ge NWs and it is proved to be covered by thin amorphous carbon by two peaks of 1330 $cm^{-1}$ (D-band) and 1590 $cm^{-1}$ (G-band). Furthermore, the electrical performances of Ge NWs doped with boron and phosphorus are measured by field effect transistor (FET) and they shows typical curves of p-type and n-type FET. It is expected to have general potentials for development of logic devices and solar cells using p-type and n-type Ge NWs with carbon sheath.

• Journal of Information Display
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• v.2 no.3
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• pp.60-65
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• 2001

Lateral type poly-silicon field emitters were fabricated by utilizing the LOCOS (Local Oxidation of Silicon) process. For the implementation 'of an ideal field emission device with quasi-zero tunneling barrier, a new and fundamental approach has used conducted by introducing an intelligent carbon-based thin layer on the cathode tip surface via a field-assisted self-aligning of carbon (FASAC) process. Fundamental lowering of the turn-on field for the electron emission was feasible through the control of both the tip shape and surface barrier height.

• Journal of the Korean Society for Precision Engineering
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• v.31 no.10
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• pp.865-871
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• 2014

Paradigm shift to 3-D chip stacking in electronic packaging has induced a lot of integration challenges due to the reduction in wafer thickness and pitch size. This study presents a hybrid bonding technology by self-alignment effect in order to improve the flip chip bonding accuracy with ultra-thin wafer. Optimization of Cu pillar bump formation and evaluation of various factors on self-alignment effect was performed. As a result, highly-improved bonding accuracy of thin wafer with a $50{\mu}m$ of thickness was achieved without solder bridging or bump misalignment by applying reflow process after thermo-compression bonding process. Reflow process caused the inherently-misaligned micro-bump to be aligned due to the interface tension between Si die and solder bump. Control of solder bump volume with respect to the chip dimension was the critical factor for self-alignment effect. This study indicated that bump design for 3D packaging could be tuned for the improvement of micro-bonding quality.

• Current Photovoltaic Research
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• v.4 no.2
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• pp.59-63
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• 2016

A key point of a soldering process for photovoltaic (PV) modules is to increase an adhesive strength leading a low resistivity between ribbon and cell. In this study, we intended to optimize a heating condition for the soldering process and characterize the soldered joint via physical and chemical analysis methods. For the purpose, the heating conditions were adjusted by IR lamp power, heating time and hot plate temperature for preheating a cell. Since then the peel test for the ribbon and cell was conducted, consequently the peel strength data shows that there is some optimum soldering condition. In here, we observed that the peel strength was modified by increasing the heating condition. Such a soldering property is affected by a various factors of which the soldered joint, flux and bus bar of the cell are changed on the heating condition. Therefore, we tried to reveal causes determining the soldering property through analyzing the soldered interface.

• BMB Reports
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• v.44 no.11
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• pp.735-740
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• 2011

Tunicamycin, an endoplasmic reticulum (ER) stress inducer, specifically inhibits N-glycosylation. The cyclic AMP (cAMP) response element-binding protein H (CREBH) was previously shown to be regulated by UPR-dependent proteolytic cleavage in the liver. On the other hand, the role of CREBH in other tissues is unknown. In the present study, tunicamycin increased the level of CREBH activation (cleavage) as well as mRNA expression in osteoblast cells. Adenoviral (Ad) overexpression of CREBH suppressed BMP2-induced expression of alkaline phosphatase (ALP) and osteocalcin (OC). Interestingly, the BMP2-induced OASIS (structurally similar to CREBH, a positive regulator of osteoblast differentiation) expression was also inhibited by CREBH overexpression. In addition, inhibition of CREBH expression using siRNA reversed the tunicamycin-suppressed ALP and OC expression. These results suggest that CREBH inhibited osteoblast differentiation via suppressing BMP2-induced ALP, OC and OASIS expression in mouse calvarial derived osteoblasts.

• Korean Journal of Materials Research
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• v.15 no.6
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• pp.419-425
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• 2005

In this paper, we describe the luminescent properties of the phosphors synthesized via sol-gel technique. When the phosphor prepared by sol-gel technique, reaction factors, such as pH condition, $R_w$ and drying temperature affected the luminescent intensity, particle size and morphology of final product. Therefore, we attempt to control these reaction factors in order to improve the luminescent efficiency of phosphors. As a result of our study, when the acid catalyst (HCl) was used, emission intensity was higher than the case of base catalyst $(NH_4OH)$. The product prepared at $R_w=60$ indicated the maximum intensity. As the increase of the $R_w$ value, the particle was agglomerated and emission intensity was decreased. Finally, optimum drying temperature of gel was found to be$ 180^{\circ}C$.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.02a
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• pp.191-191
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• 2012

InP quantum dot (QD) - organosilicon nanocomposites were synthesized and their photoluminescence quenching was mainly investigated because of their applicability to white LEDs (light emitting diodes). The as-synthesized InP QDs which were capped with myristic acid (MA) were incompatible with typical silicone encapsulants. Post ligand exchange the MA with a new ligand, 3-aminopropyldimethylsilane (APDMS), resulted in soluble InP QDs bearing Si-H groups on their surface (InP-APDMS) which allow embedding the QDs into vinyl-functionalized silicones through direct chemical bonding, overcoming the phase separation problem. However, the ligand exchange from MA to APDMS caused a significant decrease in the photoluminescent efficiency which is interpreted by ligand induced surface corrosion relying on theoretical calculations. The InP-APDMS QDs were cross-linked by 1,4-divinyltetramethylsilylethane (DVMSE) molecules via hydrosilylation reaction. As the InP-organosilicon nanocomposite grew, its UV-vis absorbance was increased and at the same time, the PL spectrum was red-shifted and, very interestingly, the PL was quenched gradually. Three PL quenching mechanisms are regarded as strong candidates for the PL quenching of the QD nano-composites, namely the scattering effect, Forster resonance energy transfer (FRET) and cross-linker tension preventing the QD's surface relaxation.

• Carbon letters
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• v.15 no.1
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• pp.1-14
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• 2014

Carbon nanofibers (CNFs) with diameters in the submicron and nanometer range exhibit high specific surface area, hierarchically porous structure, flexibility, and super strength which allow them to be used in the electrode materials of energy storage devices, and as hybrid-type filler in carbon fiber reinforced plastics and bone tissue scaffold. Unlike catalytic synthesis and other methods, electrospinning of various polymeric precursors followed by stabilization and carbonization has become a straightforward and convenient way to fabricate continuous CNFs. This paper is a comprehensive and brief review on the latest advances made in the development of electrospun CNFs with major focus on the promising applications accomplished by appropriately regulating the microstructural, mechanical, and electrical properties of as-spun CNFs. Additionally, the article describes the various strategies to make a variety of carbon CNFs for energy conversion and storage, catalysis, sensor, adsorption/separation, and biomedical applications. It is envisioned that electrospun CNFs will be the key materials of green science and technology through close collaborations with carbon fibers and carbon nanotubes.

• Journal of the Microelectronics and Packaging Society
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• v.20 no.3
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• pp.1-6
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• 2013

3D integrated circuit(IC) technology with TSV(through Si via) liquid cooling system is discussed. As a device scales down, both interconnect and packaging technologies are not fast enough to follow transistor's technology. 3D IC technology is considered as one of key technologies to resolve a device scaling issue between transistor and packaging. However, despite of many advantages, 3D IC technology suffers from power delivery, thermal management, manufacturing yield, and device test. Especially for high density and high performance devices, power density increases significantly and it results in a major thermal problem in stacked ICs. In this paper, the recent studies of TSV liquid cooling system has been reviewed as one of device cooling methods for the next generation thermal management.