Journal of Information Display

The Korean Infomation Display Society (한국정보디스플레이학회)
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Characterization of Lateral Type Field Emitters with Carbon-Based Surface Layer

  • Lee, Myoung-Bok (School of Electronic and Electrical Engineering, Kyungpook National University) ;
  • Lee, Jae-Hoon (School of Electronic and Electrical Engineering, Kyungpook National University) ;
  • Kwon, Ki-Rock (School of Electronic and Electrical Engineering, Kyungpook National University) ;
  • Lee, Hyung-Ju (School of Electronic and Electrical Engineering, Kyungpook National University) ;
  • Hahm, Sung-Ho (School of Electronic and Electrical Engineering, Kyungpook National University) ;
  • Lee, Jong-Hyun (School of Electronic and Electrical Engineering, Kyungpook National University) ;
  • Lee, Jung-Hee (School of Electronic and Electrical Engineering, Kyungpook National University) ;
  • Choi, Kyu-Man (Research Institute of electronic and Telecommunication Technologies, Kwandong University)
  • Published : 2001.09.30
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Abstract

Lateral type poly-silicon field emitters were fabricated by utilizing the LOCOS (Local Oxidation of Silicon) process. For the implementation 'of an ideal field emission device with quasi-zero tunneling barrier, a new and fundamental approach has used conducted by introducing an intelligent carbon-based thin layer on the cathode tip surface via a field-assisted self-aligning of carbon (FASAC) process. Fundamental lowering of the turn-on field for the electron emission was feasible through the control of both the tip shape and surface barrier height.

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