• Journal of the Korea Academia-Industrial cooperation Society
• /
• v.12 no.5
• /
• pp.2267-2271
• /
• 2011

This study was focused on getting p-type copper-oxide thin-film semiconductors suitable for p-channel thin-film transistors. Vacuum thermal evaporation and thermal annealing were used to get copper-oxide thin-film semiconductor having properties adoptable as an active layer of thin-film transistors. n-type thin films having electron carrier density of about $10^{22}\;cm^{-3}$ before thermal annealing was converted to p-type thin films having hole carrier density of about $10^{16}\;cm^{-3}$ as the thermal annealing conditions were optimized.

• 한국정보디스플레이학회:학술대회논문집
• /
• 2004.08a
• /
• pp.661-664
• /
• 2004

In this paper, it was demonstrated that the organic thin film transistors with the organic gate insulators were fabricated by vapor deposition polymerization (VDP) processing. The configuration of OTFTs was a staggered-inverted top-contact structure and gate dielectric layer was deposited with 0.45 ${\mu}m$ thickness. In order to form polyimide as a gate insulator, VDP process was also introduced instead of spin-coating process. Polyimide film was respectively co-deposited with different materials. One was from a 4,4'-oxydiphthalic anhydride (ODPA) and 4, 4'-oxydianiline (ODA) and the other was from 2,2-bis(3,4-dicarboxyphenyl) hexafluoropropane dianhydride (6FDA) and ODA. And it was also cured at 150 $^{\circ}C$ for 1 hour followed by 200 $^{\circ}C$ for 1 hour. Electrical characteristics of the organic thin-film transistors were detailed comparisons between the ODPA-ODA and the 6FDA-ODA which were used as gate insulator.

• 한국정보디스플레이학회:학술대회논문집
• /
• 2007.08a
• /
• pp.860-863
• /
• 2007

ZnO nano film for transparent thin film transistors is prepared by injection type source delivery system of atomic layer deposition. By using this delivery system the source delivery pulse time can dramatically be reduced to 0.005s in ALD system. ZnO nanofilms obtained at $150^{\circ}C$ are characterized.

• Journal of the Korean Vacuum Society
• /
• v.13 no.3
• /
• pp.99-102
• /
• 2004

In this work the electrical characteristics of organic thin film transistors with the surface-treated organic gate insulator have been studied. For the surface treatment of gate dielectric, Ar plasma was used. Pentacene and PVP were used as active and dielectric layers respectively. Pentacene was thermally evaporated in vacuum at a pressure of about $10^{-6}$ Torr and at a deposition rate of 0.5 $\AA$/sec. PVP was spin coated and cured at $100^{\circ}C$. before pentacene deposition. organic thin film transistors with surface-treated gate insulators have provided improved operation characteristics.

• Transactions on Electrical and Electronic Materials
• /
• v.16 no.2
• /
• pp.95-98
• /
• 2015

Organic polymer dielectric thin films of styrene and vinyl acetate were prepared by the plasma polymerization deposition technique and applied for the fabrication of an organic thin film transistor device. The structural properties of the plasma polymerized thin films were characterized by Fourier-transform infrared spectroscopy, X-ray diffraction, atomic force microscopy, and contact angle measurement. Investigation of the electrical properties of the plasma polymerized thin films was carried out by capacitance-voltage and current-voltage measurements. The organic thin film transistor device with gate dielectric of the plasma polymerized thin film revealed a low operation voltage of −10V and a low threshold voltage of −3V. It was confirmed that plasma polymerized thin films of styrene and vinyl acetate could be applied to functional organic thin film transistor devices as the gate dielectric.

• 한국정보디스플레이학회:학술대회논문집
• /
• 2008.10a
• /
• pp.218-221
• /
• 2008

Bottom-gate microcrystalline silicon thin film transistors (${\mu}c$-Si:H TFTs) were fabricated on glass and transparent polyimide substrates by conventional 13.56 MHz RF plasma enhanced chemical vapor deposition at $200^{\circ}C$. The deposition rate of the ${\mu}c$-Si:H film is 24 nm/min and the amorphous incubation layer near the ${\mu}c$-Si:H/silicon nitride interface is unobvious. The threshold voltage of ${\mu}c$-Si:H TFTs can be improved by $H_2$ or $NH_3$ plasma pretreatment silicon nitride film.

• Proceedings of the KIEE Conference
• /
• 2006.10a
• /
• pp.121-122
• /
• 2006

Recently, poly-Si TFT-LCD starts to be mass produced using excimer laser annealing (ELA) poly-Si. The main reason for this is the good quality poly-Si and large area uniformity. We report the influence of channel length and width on poly-Si TITs performance. Transfer characteristics of n-channel poly-Si thin film transistors fabricated on polycrystalline silicon (poly-Si) thin film transistors (TFTs) with various channel lengths and widths of $2-30{\mu}m$ has been investigated. In this paper, we analyzed the data of n-type TFTs. We studied threshold voltage ($V_{TH}$), on/off current ratio ($I_{ON}/I_{OFF}$), saturation current (I_{DSAT}$), and transconductance ($g_m$) of n-channel poly-Si thin film transistors with various channel lengths and widths.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2006.06a
• /
• pp.467-468
• /
• 2006

We report on the fabrication of P3HT-based thin-film transistors (TFT) that consist of indium-zinc-oxide (IZO), PVP (poly-vinyl phenol), and Ni for the source-drain (S/D) electrode, gate dielectric, and gate electrode, respectively. The IZO S/D electrodes of which the work function is well matched to that of P3HT were deposited on a P3HT channel by thermal evaporation of IZO and showed a moderately low but still effective transmittance of ~25% in the visible range along with a good sheet resistance of ${\sim}60{\Omega}/{\square}$. The maximum saturation current of our P3HT-based TFT was about $15{\mu}A$ at a gate bias of -40V showing a high field effect mobility of $0.05cm^2/Vs$ in the dark, and the on/off current ratio of our TFT was about $5{\times}10^5$. It is concluded that jointly adopting IZO for the S/D electrode and PVP for gate dielectric realizes a high-quality P3HT-based TFT.

• 한국정보디스플레이학회:학술대회논문집
• /
• 2007.08b
• /
• pp.1263-1265
• /
• 2007

The electrical characteristics of low temperature poly-Si (LTPS) thin-film transistors (TFT) with channel parallel and perpendicular to the direction of lateral growth were studied. The poly-Si film was crystallized using sequential lateral solidification (SLS) laser crystallization technique. The channel orientation dependent turn-on characteristics were investigated by using gated-diodes and capacitance-voltage measurements

• Journal of Information Display
• /
• v.9 no.4
• /
• pp.35-38
• /
• 2008

This paper reports the electrical characteristics of polyvinylpyrrolidone (PVPy) and the performance of organic thin-film transistors (OTFTs) with PVPy as a gate insulator. PVPy shows a dielectric constant of about 3 and contributes to the upright growth of pentacene molecules with $15.3\AA$ interplanar spacing. OTFT with PVPy exhibited a field-effect mobility of 0.23 $cm^2$/Vs in the saturation regime and a threshold voltage of -12.7 V. It is notable that there was hardly any threshold voltage shift in the gate voltage sweep direction. Based on this reliable evidence, PVPy is proposed as a new gate insulator for reliable and high-performance OTFTs.