Journal of the Korea Academia-Industrial cooperation Society (한국산학기술학회논문지)

The Korea Academia-Industrial cooperation Society (한국산학기술학회)
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P-type transport characteristics of copper-oxide thin films deposited by vacuum thermal evaporation

진공열증착으로 성막된 산화구리 박막의 p-형 전도특성

  • Lee, Ho-Nyeon (Department of Display and Electronic Information Engineering, Soonchunhyang University) ;
  • Song, Byeong-Jun (Department of Electrical and Robot Engineering, Soonchunhyang University)
  • 이호년 (순천향대학교 전자정보공학과) ;
  • 송병준 (순천향대학교 전기.로봇공학과)
  • Received : 2011.02.05
  • Accepted : 2011.05.12
  • Published : 2011.05.31
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Abstract

This study was focused on getting p-type copper-oxide thin-film semiconductors suitable for p-channel thin-film transistors. Vacuum thermal evaporation and thermal annealing were used to get copper-oxide thin-film semiconductor having properties adoptable as an active layer of thin-film transistors. n-type thin films having electron carrier density of about $10^{22}\;cm^{-3}$ before thermal annealing was converted to p-type thin films having hole carrier density of about $10^{16}\;cm^{-3}$ as the thermal annealing conditions were optimized.

p-채널 박막트랜지스터에 이용할 수 있는 p-형 산화구리 박막반도체를 얻기 위한 연구를 하였다. 진공열증착방법으로 산화구리 박막을 성막하였으며, 증착 후 열처리 조건을 조절하여 박막트랜지스터의 활성층에 적용 가능한 특성을 가지는 산화구리 박막반도체를 얻었다. 열처리 전에 $10^{22}\;cm^{-3}$ 수준의 전자 이송자농도를 가지던 n-형 박막이 열처리 조건을 최적화함에 따라 $10^{16}\;cm^{-3}$ 수준의 정공 이송자농도를 가지는 p-형 산화물반도체 박막으로 변화하였다.

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References

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