• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.22 no.6
• /
• pp.462-465
• /
• 2009

Schottky barrier thin film transistors (SB-TFT) on polycrystalline silicon(poly-Si) are fabricated by platinum silicided source/drain for p-type SB-TFT. High quality poly-Si film were obtained by crystallizing the amorphous Si film with excimer laser annealing (ELA) or solid phase crystallization (SPC) method, The fabricated poly-Si SB-TFTs showed low leakage current level and a large on/off current ratio larger than 10), Significant improvement of electrical characteristics were obtained by the additional forming gas annealing in 2% $H_2/N_2$ ambient, which is attributed to the termination of dangling bond at the poly-Si grain boundaries as well as the reduction of interface trap states at gate oxide/poly-Si channel.

• 한국정보디스플레이학회:학술대회논문집
• /
• 2009.10a
• /
• pp.374-377
• /
• 2009

The characteristics of the deposited thin films of the zinc oxide (ZnO) at different oxygen pressures will be elucidated in this work. The resistivity of ZnO thin films were dominated by the carrier concentration under high oxygen pressure conditions while controlled by the carrier mobility at low oxygen ambiences. In addition, we will show the characteristics of the transparent ZnO based thin film transistor (TFT) fabricated at a full room temperature process with gate dielectric of gadolinium oxide ($Gd_2O_3$) thin films.

• The Transactions of the Korean Institute of Electrical Engineers
• /
• v.40 no.6
• /
• pp.582-589
• /
• 1991

We used Cd Se as the semiconductor to analyze the Poly-TFT. Cd Se TFT is fabricated by the vacuum evaporation method and the characteristics curves of the current-voltage are obtained using the results of measurement of Cd Se TFT devices. Employing least square method and Rosenbrock algorithm, we can extract the device parameters(grain boundary mobility, trap density). The current-voltage relations calculated by extracted parameters are in good agreement with experimental results.

• Electrical & Electronic Materials
• /
• v.9 no.7
• /
• pp.745-754
• /
• 1996

이글에서는 다음의 내용을 다루었다. 1. LCD의 기능 성능 향상, (1) CRT와 TFT-LCD의 기능, 성능 비교, (2) TFT-LCD의 기능, 성능향상을 위한 과제 2. TFT-LCD의 가격 및 수급현황 3. Poly-Si TFT-LCD전망 4. 투사형 TFT-LCD 5. 반사형 LCD 6. 필림형 LCD 7. 고분자 분산형 액정(PDLC)

• Journal of the Institute of Electronics Engineers of Korea SD
• /
• v.38 no.12
• /
• pp.25-35
• /
• 2001

In order to analyze the electrical characteristics of complicated thin film transistor-liquid crystal display (TFT-LCD) array circuits, it is indispensible to use simulation programs such as PSPICE and AIM-SPICE. In this paper, we present a systematic method of extracting the input parameters of poly-Si TFT for SPICE simulations. This method was applied to two different types of poly-Si TFTs, fabricated by excimer laser annealing and silicide mediated crystallization methods, and yielded good fitting results to experimental data. Among the SPICE simulators, PSPICE has the graphic user interface feature making the composition of complicated circuits easier. We added successfully a poly-Si TFT device model to the PSPICE simulator, and analyzed easily the electrical characteristics of pixels considering the line RC delay. The results of this work would contribute to efficient simulations of poly-Si TFT-LCD arrays.

• 한국정보디스플레이학회:학술대회논문집
• /
• 2004.08a
• /
• pp.957-961
• /
• 2004

In order to realize high performance thin film transistor (TFT) on plastic substrate, Si film was deposited on plastic substrate at 170$^{\circ}C$ by using inductivity coupled plasma chemical vapor deposition (ICPCVD). Hydrogen concentration in as-deposited Si film was 3.8% which is much lower than that in film prepared by using conventional plasma enhanced chemical vapor deposition (PECVD). Si film was deposited as micro crystalline phase rather than amorphous phase even at 170$^{\circ}C$ because of high density plasma. By step-by-step Excimer laser annealing, dehydrogenation and recrystallization of Si film were carried out simultaneously. With step-by-step annealing and optimization of underlayer structure, it has succeeded to achieve large grain size of 300nm by using ICPCVD. Base on these results, poly-Si TFT was fabricated on plastic substrate successfully, and it is sufficient to drive pixels of OLEDs, as well as LCDs.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2014.02a
• /
• pp.375-375
• /
• 2014

Layered semiconductor materials can be a promising candidate for large-area thin film transistors (TFTs) due to their relatively high mobility, low-power switching, mechanically flexibility, optically transparency, and amenability to a low-cost, large-area growth technique like thermal chemical vapor deposition (CVD). Unlike 2D graphene, series of transition metal dichalcogenides (TMDCs), $MX_2$ (M=Ta, Mo, W, X=S, Se, Te), have a finite bandgap (1~2 eV), which makes them highly attractive for electronics switching devices. Recently, 2D $MoS_2$ materials can be expected as next generation high-mobility thin-film transistors for OLED and LCD backplane. In this paper, we investigate in detail the electrical characteristics of 2D layered $MoS_2$ local bottom-gated transistor with the same device structure of the conventional thin film transistor, and expect the feasibility of display application.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2009.04a
• /
• pp.70-71
• /
• 2009

Photoelectric characteristics of a hydrogenated amorphous silicon thin film transistor(a-Si:H TFT) were obtained for the illumination from various backlight sources and the results were compared and analyzed in terms of the photon energy spectral characteristics of the backlights obtained from the integration of the multiplication of the photon energy and the spectral intensity at etch wavelength. It was possible to conclude that the absorption of illuminated backlight to a-Si:H layer and the generation of electrons and holes are mainly carried out at the wavelength less than 500nm.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2008.04a
• /
• pp.55-56
• /
• 2008

The photo leakage currents of a conventional hydrogenated amorphous silicon(a-Si:H) thin film transistor(TFT) were investigated and analyzed in the case of illumination from various lightsources such as halogen lamp, cold cathode fluorescent lamp(CCFL) backlight, and white light emitting diode(LED) backlight The photo leakage characteristics showed the apparent differences in the leakage level and in the $I_{on}/I_{off}$ ratio in spite of the similar luminances of light sources. This leakage level is expected to be related to the wavelength of the lowest intensity peak from spectral analysis of light sources.

• 한국정보디스플레이학회:학술대회논문집
• /
• 2005.07b
• /
• pp.1386-1389
• /
• 2005

We report the light illumination effect on the performance of pentacene organic thin-film transistor (OTFT). The TFT performance with and without illumination were measured at various temperatures. The off-state currents increase linearly with light intensity in the region of gate voltage where the holes are majority carriers in the TFT channel. The minimum photocurrents of OTFT increase with increasing light intensity.