• Title/Summary/Keyword: thin film resonator

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Thin Film Bulk Acoustic Resonators(FBAR) filters design Air-gap type using piezoelectric thin film (압전박막을 이용한 air-gap type FBAR 필터설계)

  • Jong, Jung-Youn;Kim, Yong-Chun;Kim, Sang-Jong;Kim, Kyung-Hwan;Yoon, Seok-Jin;Choi, Hyung-Wook
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2003.07b
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    • pp.838-841
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    • 2003
  • The aim of the study is to scrutinize the relationship between the area of resonance and insertion loss by analyzing the characteristics of 2-port resonator. This was done through designing an air-gap type Film Bulk Acoustic Resonator (FBAR) by using CAD model for the application of bandpass filter of high-frequency band with piezoelectric thin film. Moreover, through the design of ladder-type BPF, we were able to observe changes in bandwidth, resonation, out-of-band rejection depending on the number and area of resonator.

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Film Bulk Acoustic Wave Resonator using surface micromachining (표면 마이크로머시닝을 이용한 압전 박막 공진기 제작)

  • 김인태;박은권;이시형;이수현;이윤희
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2002.07a
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    • pp.156-159
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    • 2002
  • Film Bulk Acoustic wave Resonator (FBAR) using thin piezoelectric films can be fabricated as monolithic integrated devices with compatibility to semiconductor process, leading to small size, low cost and high Q RF circuit elements with wide applications in communications area. This paper presents a MMIC compatible Suspended FBAR using surface micromachining. It is possible to make Si$_3$N$_4$/SiO$_2$/Si$_3$N$_4$membrane by using surface micromachining and its good effect is to remove the substrate silicon loss. FBAR was made on 2$\mu\textrm{m}$ multi-layered membrane using CVD process. According to our result, Fabricated film bulk acoustic wave resonator has two adventages. First, in the respect of device Process, our Process of the resonator using surface micromachining is very simple better than that of resonator using bull micromachining. Second, because of using the multiple layer, thermal expansion coefficient is compensated, so, the stress of thin film is reduced.

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Characteristics of ZnO Thin Film for SMR-typed FBAR Fabrication (FBAR 소자제작을 위한 ZnO 박막 증착 및 특성)

  • Shin, Young-Hwa;Kwon, Sang-Jik;Kim, Hyung-Jun
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.18 no.2
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    • pp.159-163
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    • 2005
  • This paper gives characterization of ZnO thin film deposited by RF magnetron sputtering method, which is concerned in deposition process and device fabrication process, to fabricate solidly mounted resonator(SMR)-type film bulk acoustic resonator(FBAR). A piezoelectric layer of 1.1${\mu}{\textrm}{m}$ thick ZnO thin films were grown on thermally oxidized SiO$_2$(3000 $\AA$)/Si substrate layers by RF magnetron sputtering at the room temperature. The highly c-axis oriented ZnO thin film was obtained at the conditions of 265 W of RF power, 10 mtorr of working pressure, and 50/50 of Ar/O$_2$ gas ratio. The piezoelectric-active area was 50 ${\mu}{\textrm}{m}$${\times}$50${\mu}{\textrm}{m}$, and the thickness of ZnO film and Al-3 % Cu electrode were 1.4 ${\mu}{\textrm}{m}$ and 180${\mu}{\textrm}{m}$, respectively. Its series and parallel frequencies appeared at 2.128 and 2.151 GHz, respectively, and the qualify factor of the resonator was as high as 401.8$\pm$8.5.

Frequency Characteristics of a FBAR using ZnO Thin Film (ZnO 압전박막을 이용한 FBAR의 주파수 응답특성)

  • Do, Seung-Woo;Jang, Cheol-Yeong;Choi, Hyun-Chul;Lee, Yong-Hyun
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2003.08a
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    • pp.94-97
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    • 2003
  • This study uses ZnO thin film as a piezoelectric material and Pt as bottom electrode for FBAR (film bulk acoustic resonator) device. ZnO thin film and Pt were deposited by RF-magnetron sputtering method. ZnO thin film and Pt were oriented to c-axis. Top electrode Al was deposited by thermal evaporation. The membrane was formed of bulk micromachining. The FBAR was evaluated by XRD, SEM and electrical characterization. The resonant frequency was measured by HP 8753C Network Analyzer. A fabricated FBAR device exhibited a resonant frequency of 700 MHz ~ 1.5 GHz. When bottom electrode and top electrode thickness were fixed, the resonant frequency was increased as decreasing ZnO thin film thickness.

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Thin Film Bulk Acoustic Resonators for RF Applications

  • Linh, Mai;Lee, Jae-Young;Yoon, Gi-Wan
    • Journal of information and communication convergence engineering
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    • v.4 no.3
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    • pp.111-113
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    • 2006
  • A new thin film deposition technique of piezoelectric ZnO film and its successful application for film bulk: acoustic resonator (FBAR) devices are presented. The two-step deposition used seems to be able to deposit ZnO film with a highly preferred orientation. The FBAR devices with the ZnO films show an excellent return loss of $35{\sim}50$ dB at $1.5{\sim}2$ GHz.

Adsorption Measurement of Thin Film Using a Quartz Crystal Resonator (수정진동자를 이용한 박막의 흡착 측정)

  • Kim, Byoung Chul;Park, Jung Woo;Kim, Young Han
    • Korean Chemical Engineering Research
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    • v.48 no.3
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    • pp.405-408
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    • 2010
  • A technique to measure the adsorption characteristic of surface area and pore size of a ceramic thin film is proposed, and its performance is examine. The thin film is fabricated directly on the resonator surface to measure the adsorption capacity of the film as it is, and using carbon dioxide makes the measurement easy. The results indicates that the measured surface area is satisfactory, while the pore size has some error. It is suggested that readily available carbon dioxide can be used to determine adsorption capacity of thin film at room temperature.

Design and fabrication of film Bulk Acoustic Resonator for flexible Microsystems (Flexible 마이크로시스템을 위한 압전 박막 공진기의 설계 및 제작)

  • 강유리;김용국;김수원;주병권
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.16 no.12S
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    • pp.1224-1231
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    • 2003
  • This paper reports on the air-gap type thin film bulk acoustic wave resonator(FBAR) using ultra thin wafer with thickness of 50$\mu\textrm{m}$. It was fabricated to realize a small size devices and integrated objects using MEMS technology for flexible microsystems. To reduce a error of experiment, MATLAB simulation was executed using material characteristic coefficient. Fabricated thin FBAR consisted of piezoelectric film sandwiched between metal electrodes. Used piezoelectric film was the aluminum nitride(AlN) and electrode was the molybdenum(Mo). Thin wafer was fabricated by wet etching and dry etching, and then handling wafer was used to prevent damage of FBAR. The series resonance frequency and the parallel frequency measured were 2.447㎓ and 2.487㎓, respectively. Active area is 100${\times}$100$\mu\textrm{m}$$^2$.Q-factor was 996.68 and K$^2$$\_$eff/ was 3.91%.

A Study on the Deposition Characteristics of ZnO Piezoelectric Thin film Bulk Acoustic Resonator (FBAR 응용을 위한 ZnO 압전 박막의 증착 특성에 관한 연구)

  • 최승혁;김종성
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.16 no.8
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    • pp.716-722
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    • 2003
  • ZnO thin films were deposited on Al and Pt electrodes by an RF reactive sputtering system for the fabrication of FBAR (film bulk acoustic wave resonator), and the effect of thermal treatment temperature on their c-axis preferred orientation was investigated. SEM experiments show that columnar structure of ZnO thin films were grown with c-axis normal to electrode material, and XRD experiments show that both ZnO films were grown with (002) plane preferred orientation, but larger diffraction peak was observed with Pt electrode. The peak intensity increased with higher thermal treatment temperature, but c-axis preferred orientation was diminished. The surface roughness of Al thin film was higher than that of Pt, and these affect the surface roughness of ZnO film deposited on the electrode. Though the preferred orientation with respect to Pt(111) plane was improved with higher thermal treatment temperature, this could not improve the c-axis orientation of ZnO film.

3D modeling of a surface acoustic wave for wireless sensors (무선 센서용 표면탄성파의 3 차원 모델링)

  • Cuong, Tran Ngoc;Chung, Gwiy-Sang
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2009.11a
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    • pp.111-111
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    • 2009
  • In this work, we discuss simulation of surface acoustic wave device using Comsol Multiphysics. The structure SAW device based on piezoelectric thin film aluminum-nitride (AlN) on silicon was simulated. Some parameters of SAW device such as surface velocity, displacement of piezoelectric thin film were evaluated by software. Many modes and shapes of wave are also discussed in this paper. For evaluation physical parameters of AlN piezoelectric layer, the SAW resonator was modeled and simulation results were also compared with experiment results. we simulated arid evaluated the surface Rayleigh wave of AlN thin film on silicon substrate. Results simulation and experiment showed the surface velocity of AlN thin film was about 5200 m/s and shape of surface wave was also displayed. This paper has also proposed as method to study SAW characteristic of piezoelectric thin film and found out measurement values accurately of film such as stiffness matrix, piezoelectric matrix. These values are very important in calculation and design SAW device or MEMS device based on AlN piezoelectric layer.

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Structure characteristics of $SiO_2$ thin film of the FBAR Bragg reflector (FBAR 소자의 Bragg 반사층의 $SiO_2$ 박막 특성에 관한 연구)

  • Lee, Soon-Bum;Park, Sung-Hyun;Lee, Neung-Heon;Shin, Young-Hwa
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2005.07a
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    • pp.377-378
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    • 2005
  • In this study, $SiO_2$ thin film was deposited on variable conditions of the RF power and working pressure by RF magnetron sputtering to apply to the Bragg reflector of the SMR type FBAR device. A crystal orientation and microstructure of $SiO_2$ thin film was studied by using the XRD, AFM and SEM. The best condition was obtained through analyzing the structural characteristics of thin film. Finally, FBAR device was fabricated with applying the best condition of $SiO_2$ thin film and the resonant characteristics was investigated by network analyzer to verify application possibility as a efficient device.

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